Negative ion beam technology for materials science (invited)

1992 ◽  
Vol 63 (4) ◽  
pp. 2368-2373 ◽  
Author(s):  
Junzo Ishikawa
Keyword(s):  
Materials Science ◽  
Ion Beam ◽  
Negative Ion

The ANL HVEM-tandem accelerator facilities

1978 ◽  
Vol 36 (1) ◽  
pp. 76-77
Author(s):  
R. Lyles ◽  
A. Taylor ◽  
K. Merkle ◽  
P. Okamoto ◽  
P. Pronko
Keyword(s):  
Materials Science ◽  
Ion Trap ◽  
Ion Beam ◽  
Dark Field ◽  
Negative Ion ◽  
Target Area ◽  
Tandem Accelerator ◽  
High Voltage Electron Microscopy ◽  
Voltage Electron ◽  
Ion Accelerator

The ANL HVEM-TANDEM accelerator facilities are being developed to provide a unique combination of techniques for basic studies in the field of materials science. In addition to the methods of high voltage electron microscopy, the ion accelerator system will provide ion beam analysis and ion bombardment - implantation capability either in the HVEM or in an adjacent target area. The installation of the HVEM is completed and constitutes the first step in the development of a materials research laboratory, which will include a HVEM/ion beam interface with a 300 kV ion accelerator and a 2-MV tandem accelerator. The plan layout of these facilities is shown schematically in Figure 1.ANL's 1.2 MeV HVEM is an improved version of the AEI EM-7 and has a guaranteed resolution of 5 Å point-to-point. The design of the microscope contains a number of unique features. These include a specially designed ion beam access flight tube, instrumentation for two independently adjustable dark field conditions, 100 - 1200 kV continuous-mode accelerating voltage selection, a negative ion trap, and an ion- pumped specimen chamber.

The New ANL Materials Science HVEM Facility

1977 ◽  
Vol 35 ◽  
pp. 98-99
Author(s):  
R. L. Lyles ◽  
K. L. Merkle ◽  
P. Okamoto
Keyword(s):  
Materials Science ◽  
Ion Trap ◽  
Ion Beam ◽  
National Laboratory ◽  
High Vacuum ◽  
Argonne National Laboratory ◽  
Dark Field ◽  
Negative Ion ◽  
Tandem Accelerator ◽  
Materials Research

A new transmission HVEM facility has been completed at Argonne National Laboratory. The ANL HVEM provides the beginning of a dedicated materials research laboratory which will subsequently include an interface with a 2 MV tandem accelerator and a low energy ion injector for iri situ ion irradiation and ion beam analysis experiments (Figure 1).The microscope, an improved version of the AEI EM-7, has an accelerating voltage of 1.2 MeV. Moreover, a number of exceptional features have been designed into the instrument which will significantly enhance its usefulness in materials research: 1. High vacuum specimen chamber with direct ion pumping. 2. Instrumentation for two independent and alternatively selectable dark field conditions. 3. Negative ion trap. 4. Ion beam interface. In addition, a helium temperature, side entry, cooling stage is being developed at ANL . The negative ion trap and the ion beam interface are features that have not been previously included in HVEM designs.

Characteristics of extracted ion beam from a cesium-free negative ion source using sheet plasma

2020 ◽  
Vol 91 (11) ◽  
pp. 113302
Author(s):  
H. Kaminaga ◽  
T. Takimoto ◽  
A. Tonegawa ◽  
K. N. Sato
Keyword(s):  
Ion Beam ◽  
Ion Source ◽  
Negative Ion ◽  
Sheet Plasma

scholarly journals Negative ion beam acceleration and transport in the high voltage injector prototype

2021 ◽  
Author(s):  
O. Sotnikov ◽  
A. Sanin ◽  
Yu. Belchenko ◽  
A. A. Ivanov ◽  
G. Abdrashitov ◽  
...  
Keyword(s):  
High Voltage ◽  
Ion Beam ◽  
Negative Ion

Carbon Nitride Film Formation by Low Energy Positive and Negative Ion Beam Deposition

1996 ◽  
Vol 438 ◽  
Author(s):  
N. Tsubouchi ◽  
Y. Horino ◽  
B. Enders ◽  
A. Chayahara ◽  
A. Kinomura ◽  
...  
Keyword(s):  
Carbon Nitride ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
High Vacuum ◽  
Negative Ions ◽  
Low Energy ◽  
Ultra High Vacuum ◽  
Negative Ion ◽  
Nitride Film ◽  
Ion Energy

AbstractUsing a newly developed ion beam apparatus, PANDA (Positive And Negative ions Deposition Apparatus), carbon nitride films were prepared by simultaneous deposition of mass-analyzed low energy positive and negative ions such as C2-, N+, under ultra high vacuum conditions, in the order of 10−6 Pa on silicon wafer. The ion energy was varied from 50 to 400 eV. The film properties as a function of their beam energy were evaluated by Rutherford Backscattering Spectrometry (RBS), Fourier Transform Infrared spectroscopy (FTIR) and Raman scattering. From the results, it is suggested that the C-N triple bond contents in films depends on nitrogen ion energy.

Simulation of space charge compensation in a multibeamlet negative ion beam

2016 ◽  
Vol 87 (2) ◽  
pp. 02B917 ◽  
Author(s):  
E. Sartori ◽  
T. J. Maceina ◽  
P. Veltri ◽  
M. Cavenago ◽  
G. Serianni
Keyword(s):  
Space Charge ◽  
Ion Beam ◽  
Charge Compensation ◽  
Negative Ion

FIB Techniques for Analysis of Metallurgical Specimens

2000 ◽  
Vol 6 (S2) ◽  
pp. 524-525 ◽  
Author(s):  
Michael W. Phaneuf ◽  
Jian Li
Keyword(s):  
Focused Ion Beam ◽  
Materials Science ◽  
Ion Beam ◽  
Semiconductor Industry ◽  
Zirconium Alloys ◽  
Chemical Information ◽  
Specimen Preparation ◽  
Orientation Contrast ◽  
Imaging Tool ◽  
Zinc Coatings

Focused ion beam (FIB) microscopes, the use of which is well established in the semiconductor industry, are rapidly gaining attention in the field of materials science, both as a tool for producing site specific, parallel sided TEM specimens and as a stand alone specimen preparation and imaging tool.Both FIB secondary ion images (FIB SII) and FIB secondary electron images (FIB SEI) contain novel crystallographic and chemical information. The ability to see “orientation contrast” in FIB SEI and to a lesser extent SII is well known for cubic materials and more recently stress-free FIB sectioning combined with FIB imaging have been shown to reveal evidence of plastic deformation in metallic specimens. Particularly in hexagonal metals, FIB orientation contrast is sometimes reduced or eliminated by the FIB sectioning process. We have successfully employed FIB gas assisted etching during FIB sectioning using XeF2 for zirconium alloys and Cl2 for zinc coatings on steels to retain orientation contrast during subsequent imaging.

Formation of Thin Au Films Using Negative-Ion-Beam Deposition

1997 ◽  
Vol 160 (2) ◽  
pp. 591-597
Author(s):  
C. Heck ◽  
A. Chayahara ◽  
N. Tsubouchi ◽  
Y. Horino ◽  
K. Fujii ◽  
...  
Keyword(s):  
Ion Beam ◽  
Negative Ion ◽  
Ion Beam Deposition ◽  
Beam Deposition

First results of the ITER-relevant negative ion beam test facility ELISE (invited)

2014 ◽  
Vol 85 (2) ◽  
pp. 02B305 ◽  
Author(s):  
U. Fantz ◽  
P. Franzen ◽  
B. Heinemann ◽  
D. Wünderlich
Keyword(s):  
Ion Beam ◽  
Negative Ion ◽  
Test Facility ◽  
Beam Test ◽  
First Results
Sign in / Sign up

Export Citation Format

Share Document