Lasing operation up to 200 K in the wavelength range of 570–590 nm by GaInP/AlGaInP double‐heterostructure laser diodes on GaAsP substrates

1995 ◽  
Vol 66 (7) ◽  
pp. 783-785 ◽  
Author(s):  
T. Tanaka ◽  
K. Uchida ◽  
Y. Ishitani ◽  
S. Minagawa
Keyword(s):  
Wavelength Range ◽  
Laser Diodes ◽  
Double Heterostructure ◽  
Heterostructure Laser

Loss processes in organic double-heterostructure laser diodes

2007 ◽  
Author(s):  
Christian Gärtner ◽  
Christian Karnutsch ◽  
Jan Brückner ◽  
Nico Christ ◽  
Stephan Uebe ◽  
...  
Keyword(s):  
Laser Diodes ◽  
Double Heterostructure ◽  
Heterostructure Laser

Continuous Operation over 2500 h of Double Heterostructure Laser Diodes with Output Powers More Than 80 mW

1974 ◽  
Vol 13 (9) ◽  
pp. 1485-1486 ◽  
Author(s):  
Osamu Nakada ◽  
Naoki Chinone ◽  
Satoshi Nakamura ◽  
Hisao Nakashima ◽  
Ryoichi Ito
Keyword(s):  
Laser Diodes ◽  
Continuous Operation ◽  
Double Heterostructure ◽  
Heterostructure Laser

Accelerated aging test of InGaAsP/InP double‐heterostructure laser diodes with single transverse mode

1981 ◽  
Vol 38 (1) ◽  
pp. 16-17 ◽  
Author(s):  
H. Imai ◽  
M. Morimoto ◽  
H. Ishikawa ◽  
K. Hori ◽  
M. Takusagawa ◽  
...  
Keyword(s):  
Laser Diodes ◽  
Accelerated Aging ◽  
Transverse Mode ◽  
Double Heterostructure ◽  
Heterostructure Laser ◽  
Accelerated Aging Test ◽  
Aging Test

Activation energy of degradation in GaAlAs double heterostructure laser diodes

1981 ◽  
Vol 52 (5) ◽  
pp. 3167-3171 ◽  
Author(s):  
Hajime Imai ◽  
Ken‐ichi Hori ◽  
Masahito Takusagawa ◽  
Koichi Wakita
Keyword(s):  
Activation Energy ◽  
Laser Diodes ◽  
Double Heterostructure ◽  
Activation Energy Of Degradation ◽  
Heterostructure Laser
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