Time‐resolved x‐ray measurement system for studying the lattice deformation of semiconductor crystals under laser irradiation

1989 ◽  
Vol 60 (7) ◽  
pp. 2342-2345 ◽  
Author(s):  
S. Kawado ◽  
S. Kojima ◽  
T. Ishikawa ◽  
T. Takahashi ◽  
S. Kikuta
Keyword(s):  
Laser Irradiation ◽  
Measurement System ◽  
Lattice Deformation ◽  
Time Resolved ◽  
X Ray ◽  
Semiconductor Crystals

Time-Resolved X-Ray Studies During Pulsed-Laser Irradiation of Ge

1984 ◽  
Vol 35 ◽  
Author(s):  
J.Z. Tischler ◽  
B.C. Larson ◽  
D.M. Mills
Keyword(s):  
Melting Point ◽  
Laser Irradiation ◽  
Pulsed Laser ◽  
Laser Pulses ◽  
High Energy ◽  
Measured Temperature ◽  
Time Resolved ◽  
Synchrotron Source ◽  
X Ray ◽  
Pulsed Laser Irradiation

ABSTRACTSynchrotron x-ray pulses from the Cornell High Energy Synchrotron Source (CHESS) have been used to carry out nanosecond resolution measurements of the temperature distrubutions in Ge during UV pulsed-laser irradiation. KrF (249 nm) laser pulses of 25 ns FWHM with an energy density of 0.6 J/cm2 were used. The temperatures were determined from x-ray Bragg profile measurements of thermal expansion induced strain on <111> oriented Ge. The data indicate the presence of a liquid-solid interface near the melting point, and large (1500-4500°C/pm) temperature gradients in the solid; these Ge results are analagous to previous ones for Si. The measured temperature distributions are compared with those obtained from heat flow calculations, and the overheating and undercooling of the interface relative to the equilibrium melting point are discussed.

Time-Resolved X-Ray Absorption of An Amorphous Si Foil During Pulsed Laser Irradiation

1985 ◽  
Vol 51 ◽  
Author(s):  
Kouichi Murakami ◽  
Hans C. Gerritsen ◽  
Hedser Van Brug ◽  
Fred Bijkerk ◽  
Frans W. Saris ◽  
...  
Keyword(s):  
Laser Irradiation ◽  
Direct Evidence ◽  
Pulsed Laser ◽  
Time Resolved ◽  
Edge Structure ◽  
X Ray ◽  
Nanosecond Pulsed Laser ◽  
Amorphous Si ◽  
X Ray Absorption ◽  
Pulsed Laser Irradiation

ABSTRACTWe report time-resolved X-ray absorption and extended X-ray absorption fine structure (EXAFS) measurements on amorphous silicon under nanosecond pulsed-laser irradiation. Each measurement was performed with one laser shot in the X-ray energy range from 90 to 300 eV. An X-ray absorption spectrum for induced liquid Si (liq*Si) was first observed above an energy density of 0.17 J/cm2. It differs significantly from the spectrum for amorphous Si and characteristically shows the disappearance of the Si-L(II,III) edge structure at around 100 eV. This phenomenon is interpreted in terms of a significant reduction in the 3s-like character of the unfilled part of the conduction band of liq*Si compared to that of amorphous Si. This is the first direct evidence that liq*Si has a metallic-like electronic structure. Timeresolved EXAFS results are also discussed briefly.

Picosecond Time-Resolved X-Ray Diffraction from Si(111) under High-Power Laser Irradiation

2000 ◽  
Vol 39 (Part 2, No. 10A) ◽  
pp. L984-L986 ◽  
Author(s):  
Yoichiro Hironaka ◽  
Akio Yazaki ◽  
Fumikazu Saito ◽  
Kazutaka G. Nakamura ◽  
Ken-ichi Kondo
Keyword(s):  
Laser Irradiation ◽  
High Power ◽  
High Power Laser ◽  
X Ray Diffraction ◽  
Power Laser ◽  
Time Resolved ◽  
X Ray

Nanosecond resolution time-resolved x-ray study of silicon during pulsed-laser irradiation

1986 ◽  
Vol 1 (1) ◽  
pp. 144-154 ◽  
Author(s):  
B. C. Larson ◽  
J. Z. Tischler ◽  
D. M. Mills
Keyword(s):  
Laser Irradiation ◽  
Irradiation Time ◽  
Pulsed Laser ◽  
High Energy ◽  
Resolution Time ◽  
Time Resolved ◽  
Synchrotron Source ◽  
X Ray ◽  
Temperature Distributions ◽  
Pulsed Laser Irradiation

We have used the pulsed time structure of the Cornell High-Energy Synchrotron Source (CHESS) to carry out a nanosecond resolution time-resolved x-ray study of silicon during pulsed-laser irradiation. Time-resolved temperature distributions and interfacial overheating and undercooling were measured on 〈111〉 and 〈100〉 silicon during 25 ns UV laser pulses through the analysis of thermal expansion induced strain. The temperature gradients were found to be > 107 K/cm at the liquid-solid interface and the temperature distributions have been shown to be in agreement with numerical heat flow calculations for these laser conditions. The combined overheating and undercooling (during ∼ 10 m/s melting and ∼ 6 m/s regrowth) was measured to be 110 ± 30 K on 〈111〉 oriented silicon and 50 ± 25 K on 〈100〉 silicon. These values have been interpreted in terms of velocity coefficients of overheating and undercooling.

scholarly journals Picosecond time-resolved X-ray diffraction from laser-shocked semiconductors

2004 ◽  
Vol 22 (3) ◽  
pp. 285-288 ◽  
Author(s):  
KAZUTAKA G. NAKAMURA ◽  
YOICHIRO HIRONAKA ◽  
HIDETAKA KAWANO ◽  
HIROAKI KISHIMURA ◽  
KEN-ICHI KONDO
Keyword(s):  
Shock Wave ◽  
Wave Propagation ◽  
Structural Dynamics ◽  
Lattice Deformation ◽  
X Rays ◽  
X Ray Diffraction ◽  
Time Resolved ◽  
X Ray ◽  
Femtosecond Laser Beam ◽  
Diffraction Patterns

Ultrashort pulsed hard X rays are generated by focusing an intense femtosecond laser beam onto metal targets. Kαemissions are obtained from a Cu target. Picosecond time-resolved X-ray diffraction is performed to investigate structural dynamics of laser-shocked semiconductors using the laser plasma X-ray pulses. Lattice deformation associated with shock-wave propagation is directly observed. Evolution of strain profiles inside the crystal is determined without disturbance from the time-resolved X-ray diffraction patterns.

Time-Resolved X-Ray Diffraction Measurement of Silicon Surface during Laser Irradiation under Grazing-Incidence Conditions

1994 ◽  
Vol 33 (Part 1, No. 10) ◽  
pp. 5612-5616 ◽  
Author(s):  
Shigeru Kojima ◽  
Kuang-Yu Liu ◽  
Yoshihiro Kudo ◽  
Seiji Kawado ◽  
Tetsuya Ishikawa ◽  
...  
Keyword(s):  
Laser Irradiation ◽  
Silicon Surface ◽  
Grazing Incidence ◽  
Diffraction Measurement ◽  
X Ray Diffraction ◽  
Time Resolved ◽  
X Ray

scholarly journals A time‐resolved x‐ray absorption study of amorphous Si during pulsed laser irradiation

1986 ◽  
Vol 60 (5) ◽  
pp. 1774-1783 ◽  
Author(s):  
H. C. Gerritsen ◽  
H. van Brug ◽  
F. Bijkerk ◽  
K. Murakami ◽  
M. J. van der Wiel
Keyword(s):  
Laser Irradiation ◽  
Pulsed Laser ◽  
Absorption Study ◽  
Time Resolved ◽  
X Ray ◽  
Amorphous Si ◽  
X Ray Absorption ◽  
Pulsed Laser Irradiation

The Development of a Time-Resolved X-ray Measurement System Using Imaging Plate

1994 ◽  
pp. 385-393
Author(s):  
Katsunari Sasaki ◽  
Hideto Yamazaki ◽  
Kenji Masuda ◽  
Ging-Ho Hsiue
Keyword(s):  
Measurement System ◽  
Imaging Plate ◽  
Time Resolved ◽  
X Ray
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