Parallel detection for high‐resolution electron energy loss studies in the scanning transmission electron microscope

1988 ◽  
Vol 59 (7) ◽  
pp. 1132-1138 ◽  
Author(s):  
P. E. Batson
Keyword(s):  
Electron Microscope ◽  
High Resolution ◽  
Energy Loss ◽  
Electron Energy ◽  
Transmission Electron Microscope ◽  
Scanning Transmission Electron Microscope ◽  
Transmission Electron ◽  
Resolution Electron ◽  
Scanning Transmission ◽  
Electron Energy Loss

ELECTRON ENERGY LOSS SPECTROSCOPY AND ANNULAR DARK FIELD IMAGING AT A NANOMETER RESOLUTION IN A SCANNING TRANSMISSION ELECTRON MICROSCOPE

2000 ◽  
Vol 07 (04) ◽  
pp. 475-494 ◽  
Author(s):  
O. STÉPHAN ◽  
A. GLOTER ◽  
D. IMHOFF ◽  
M. KOCIAK ◽  
C. MORY ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Energy Loss ◽  
Electron Energy ◽  
Transmission Electron Microscope ◽  
Electron Energy Loss Spectroscopy ◽  
Scanning Transmission Electron Microscope ◽  
Scanning Transmission Electron ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Electron Energy Loss

The basics of electron energy loss spectroscopy (EELS) performed in the context of a scanning transmission electron microscope are described. This includes instrumentation, information contained in an EELS spectrum, data acquisition and processing, and some illustrations by a few examples.

SiO2 Formation at the Aluminum Oxide/Si(100) Interface

2002 ◽  
Vol 747 ◽  
Author(s):  
A. Roy Chowdhuri ◽  
C. G. Takoudis ◽  
R. F. Klie ◽  
N. D. Browning
Keyword(s):  
Electron Microscope ◽  
Aluminum Oxide ◽  
Energy Loss ◽  
Electron Energy ◽  
Transmission Electron Microscope ◽  
Scanning Transmission Electron Microscope ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Z Contrast ◽  
Electron Energy Loss

ABSTRACTThin films of aluminum oxide were deposited on clean Si(100) substrates using trimethylaluminum and oxygen at 300°C. Infrared spectroscopic and x-ray photoelectron spectroscopic analyses of these films showed no aluminum silicate or SiO2 phase formation at the film/substrate interface. The O/Al ratio in the as deposited film was found to be higher than that in stoichiometric Al2O3. On annealing the as deposited samples in Ar at higher temperatures, a peak due to the transverse optical phonon for the Si-O-Si stretching mode appeared in the infrared spectra. A combination of Z-contrast imaging and electron energy loss spectroscopy in the scanning transmission electron microscope confirmed that the annealed samples developed a layer of silicon dioxide at the aluminum oxide-Si interface. Z-contrast images and electron energy loss spectra, obtained while heating the sample inside the scanning transmission electron microscope were used to follow the interfacial SiO2 formation.

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