CAMAC module for high‐speed synchronous transfer of 32‐bit binary data

1988 ◽  
Vol 59 (7) ◽  
pp. 1232-1236
Author(s):  
Mark Stoelting ◽  
Roy Marchant ◽  
Owen I. Smith
Keyword(s):  
Binary Data ◽  
High Speed ◽  
Camac Module

High Speed Programmable Fiber Optic Binary Data Generator

1989 ◽  
Vol 28 (1) ◽  
Author(s):  
Anastasios P. Goutzoulis ◽  
D. Kenneth Davies
Keyword(s):  
Binary Data ◽  
High Speed ◽  
Fiber Optic ◽  
Data Generator

scholarly journals High performance turbo encoder using mealy FSM state encoding technique

2018 ◽  
Vol 7 (3.3) ◽  
pp. 255 ◽  
Author(s):  
E Sujatha ◽  
Dr C. Subhas ◽  
Dr M. N. Giri Prasad
Keyword(s):  
Wireless Communication ◽  
Communication System ◽  
Binary Data ◽  
High Speed ◽  
Long Term Evolution ◽  
Quality Data ◽  
Wireless Communication System ◽  
Term Evolution ◽  
Turbo Encoder

Error-correction Coding plays a vital role to obtain efficient and high quality data transmission, in today’s high speed wireless communication system. Considering the requirement of using high data rates by Long Term Evolution (LTE) system, parallel concatenation of two convolutional encoders were used to design turbo encoder. In this research task a high speed turbo encoder, which is a key component in the transmitter of wireless communication System, with memory based interleaver has been designed and implemented on FPGA for 3rd Generation Partnership Project (3GPP) defined Long Term Evolution – Advanced (LTE-A) standard using Finite state Machine(FSM) encoding technique. Memory based quadratic permutation polynomial (QPP) interleaver shuffles a sequence of binary data and supports any of the 188 block sizes from N= 40 to N= 6144. The proposed turbo encoder is implemented using 28nm CMOS technology and achieved 300 Mbps data rate by using 1% of available total hardware logic. By using the proposed technique, encoded data can be released continuously with the help of two parallel memories to write/read the input using pipelining concept.  

scholarly journals Design of BPSK Modulator Using VHDL

2014 ◽  
Vol 13 (12) ◽  
pp. 5247-5252
Author(s):  
Mamtha Shetty
Keyword(s):  
Communication Systems ◽  
Binary Data ◽  
High Speed ◽  
Data Rate ◽  
Hardware Description Language ◽  
Description Language ◽  
Modulation Technique ◽  
Hardware Description ◽  
Simulation Results ◽  
Bpsk Modulation

Binary Phase Shift Keying represents the simulation results of binary digital modulation schemes. Here for BASK and BPSK modulation techniques use FPGA algorithm. If multiplier block is used for multiplication bit stream with carrier signal, used time will rises. In addition using multiplier block obtained simulation results were analyzed and compared to other simulation results. Source consumptions of FPGA-based BASK modulation technique and BPSK modulation technique were compared. Also, for different modulation algorithm, source consumptions of BASK and BPSK modulation technique were analyzed using VHDL. Designed modulators using VHSIC (Very High Speed Integrated Circuit) Hardware Description Language (VHDL) was realized on high speed FPGA (Field Program Programmable Gate Array). Because for used modulation technique data rate transfer is fairly important in wireless communication systems. The highest speed data rate transfer can be realized using fiber optic cables. In addition, BER (Bit Error Rate) of BASK and BPSK modulator was compared using MATLAB simulation program. Binary data rate is same for BPSK and BASK. BPSK and BASK modulations were designed on FPGA using VHDL hardware description language.

Microfabrication research at the National Submicron Facility

1983 ◽  
Vol 41 ◽  
pp. 86-89
Author(s):  
E.D. Wolf
Keyword(s):  
Integrated Circuits ◽  
Particle Physics ◽  
High Speed ◽  
New Technology ◽  
High Energy ◽  
High Energy Particle ◽  
New Science ◽  
Wide Range ◽  
Intermediate Domain ◽  
Circuit Function

Most microelectronics devices and circuits operate faster, consume less power, execute more functions and cost less per circuit function when the feature-sizes internal to the devices and circuits are made smaller. This is part of the stimulus for the Very High-Speed Integrated Circuits (VHSIC) program. There is also a need for smaller, more sensitive sensors in a wide range of disciplines that includes electrochemistry, neurophysiology and ultra-high pressure solid state research. There is often fundamental new science (and sometimes new technology) to be revealed (and used) when a basic parameter such as size is extended to new dimensions, as is evident at the two extremes of smallness and largeness, high energy particle physics and cosmology, respectively. However, there is also a very important intermediate domain of size that spans from the diameter of a small cluster of atoms up to near one micrometer which may also have just as profound effects on society as “big” physics.

Vacuum System to Minimize the Specimen Contamination of High-Performance EM

1977 ◽  
Vol 35 ◽  
pp. 68-69
Author(s):  
N. Yoshimura ◽  
K. Shirota ◽  
T. Etoh
Keyword(s):  
Electron Microscope ◽  
High Speed ◽  
High Performance ◽  
High Vacuum ◽  
Vacuum System ◽  
Pump System ◽  
Pumping System ◽  
Diffusion Pump ◽  
Almost All ◽  
Cascade Type

One of the most important requirements for a high-performance EM, especially an analytical EM using a fine beam probe, is to prevent specimen contamination by providing a clean high vacuum in the vicinity of the specimen. However, in almost all commercial EMs, the pressure in the vicinity of the specimen under observation is usually more than ten times higher than the pressure measured at the punping line. The EM column inevitably requires the use of greased Viton O-rings for fine movement, and specimens and films need to be exchanged frequently and several attachments may also be exchanged. For these reasons, a high speed pumping system, as well as a clean vacuum system, is now required. A newly developed electron microscope, the JEM-100CX features clean high vacuum in the vicinity of the specimen, realized by the use of a CASCADE type diffusion pump system which has been essentially improved over its predeces- sorD employed on the JEM-100C.

The on-line use of histogram data for high-speed correction and alignment of electron microscope images

1984 ◽  
Vol 42 ◽  
pp. 556-557
Author(s):  
William Krakow
Keyword(s):  
Power Spectrum ◽  
High Speed ◽  
Direct Memory Access ◽  
Digital Television ◽  
Contrast Transfer Function ◽  
The Past ◽  
High Resolution Tem ◽  
On Line ◽  
Correction Of Astigmatism ◽  
The Fourier Transform

In the past few years on-line digital television frame store devices coupled to computers have been employed to attempt to measure the microscope parameters of defocus and astigmatism. The ultimate goal of such tasks is to fully adjust the operating parameters of the microscope and obtain an optimum image for viewing in terms of its information content. The initial approach to this problem, for high resolution TEM imaging, was to obtain the power spectrum from the Fourier transform of an image, find the contrast transfer function oscillation maxima, and subsequently correct the image. This technique requires a fast computer, a direct memory access device and even an array processor to accomplish these tasks on limited size arrays in a few seconds per image. It is not clear that the power spectrum could be used for more than defocus correction since the correction of astigmatism is a formidable problem of pattern recognition.

Structural changes in silicon-on-insulator material during post-implantation annealing

1986 ◽  
Vol 44 ◽  
pp. 736-737
Author(s):  
C. O. Jung ◽  
S. J. Krause ◽  
S.R. Wilson
Keyword(s):  
Integrated Circuits ◽  
Oxide Layer ◽  
High Speed ◽  
Structural Changes ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Quality ◽  
Radiation Hardened ◽  
Post Implantation ◽  
Very High

Silicon-on-insulator (SOI) structures have excellent potential for future use in radiation hardened and high speed integrated circuits. For device fabrication in SOI material a high quality superficial Si layer above a buried oxide layer is required. Recently, Celler et al. reported that post-implantation annealing of oxygen implanted SOI at very high temperatures would eliminate virtually all defects and precipiates in the superficial Si layer. In this work we are reporting on the effect of three different post implantation annealing cycles on the structure of oxygen implanted SOI samples which were implanted under the same conditions.

An atomic-resolution microscope study of Al contracts on GaAs

1986 ◽  
Vol 44 ◽  
pp. 726-727
Author(s):  
Z. Liliental-Weber ◽  
C. Nelson ◽  
R. Ludeke ◽  
R. Gronsky ◽  
J. Washburn
Keyword(s):  
High Speed ◽  
Schottky Contacts ◽  
Detailed Knowledge ◽  
The Past ◽  
Semiconductor Interfaces ◽  
Deposited Metal ◽  
Microwave Applications ◽  
Free Interfaces ◽  
Potential Use

The properties of metal/semiconductor interfaces have received considerable attention over the past few years, and the Al/GaAs system is of special interest because of its potential use in high-speed logic integrated optics, and microwave applications. For such materials a detailed knowledge of the geometric and electronic structure of the interface is fundamental to an understanding of the electrical properties of the contact. It is well known that the properties of Schottky contacts are established within a few atomic layers of the deposited metal. Therefore surface contamination can play a significant role. A method for fabricating contamination-free interfaces is absolutely necessary for reproducible properties, and molecularbeam epitaxy (MBE) offers such advantages for in-situ metal deposition under UHV conditions

Sign in / Sign up

Export Citation Format

Share Document