Position‐sensitive photodetector based on hydrogenated amorphous silicon p‐i‐n junctions

1987 ◽  
Vol 58 (2) ◽  
pp. 202-206 ◽  
Author(s):  
V. A. Chumak ◽  
M. Bertolotti ◽  
A. Ferrari ◽  
F. Bartoloni ◽  
F. Evangelisti
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Position Sensitive ◽  
Hydrogenated Amorphous

Hydrogenated amorphous silicon position sensitive detector

1985 ◽  
Vol 57 (10) ◽  
pp. 4778-4782 ◽  
Author(s):  
Satoshi Arimoto ◽  
Hidekazu Yamamoto ◽  
Hideo Ohno ◽  
Hideki Hasegawa
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Position Sensitive Detector ◽  
Sensitive Detector ◽  
Position Sensitive ◽  
Hydrogenated Amorphous

Hydrogenated Amorphous Silicon / ZnO Shottky Heterojunction for Position Sensitive Detectors

2001 ◽  
Vol 664 ◽  
Author(s):  
H. ǵuas ◽  
P. Nunes ◽  
E. Fortunato ◽  
R. Silva ◽  
V. Silva ◽  
...  
Keyword(s):  
Light Intensity ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Good Sensitivity ◽  
Transparent Substrate ◽  
Frequent Failure ◽  
Position Sensitive ◽  
Short Circuits ◽  
Position Sensitive Detectors ◽  
Hydrogenated Amorphous

ABSTRACTIn this work a new structure is proposed for position sensitive detectors consisting of glass/Cr/a-Si:H(n+)/a-Si:H(i)/ZnO, where the ZnO forms an heterojunction with the a-Si:H(i). The results show that this structure works with success in the fabrication of linear position sensitive detectors. The devices present a good nonlinearity of ͌ 2% and a good sensitivity tothe light intensity. The main advantages of this structure over the classical p-i-n are an easier to built topology and a higher yield due to a better immunity to the a-Si:H pinholes, since the ZnO does not diffuse so easily into a-Si:H as the metal does, which are the cause of frequent failure in the p-i-n devices due to short-circuits caused by the deposition of the metal over the a-Si:H. In this structure the illumination is made directly on the ZnO, so a transparent substrate is not needed and a larger range of substrates can be used.

BONDING IN HYDROGENATED AMORPHOUS SILICON

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-773-C4-777 ◽  
Author(s):  
H. R. Shanks ◽  
F. R. Jeffrey ◽  
M. E. Lowry
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Hydrogenated Amorphous

High Rate Deposition of Stable Hydrogenated Amorphous Silicon in Transition from Amorphous to Microcrystalline Silicon

2003 ◽  
Vol 762 ◽  
Author(s):  
Guofu Hou ◽  
Xinhua Geng ◽  
Xiaodan Zhang ◽  
Ying Zhao ◽  
Junming Xue ◽  
...  
Keyword(s):  
Phase Transition ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
High Rate ◽  
Very High Frequency ◽  
High Quality ◽  
Working Pressure ◽  
Hydrogen Dilution ◽  
Hydrogenated Amorphous

AbstractHigh rate deposition of high quality and stable hydrogenated amorphous silicon (a-Si:H) films were performed near the threshold of amorphous to microcrystalline phase transition using a very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) method. The effect of hydrogen dilution on optic-electronic and structural properties of these films was investigated by Fourier-transform infrared (FTIR) spectroscopy, Raman scattering and constant photocurrent method (CPM). Experiment showed that although the phase transition was much influenced by hydrogen dilution, it also strongly depended on substrate temperature, working pressure and plasma power. With optimized condition high quality and high stable a-Si:H films, which exhibit σph/σd of 4.4×106 and deposition rate of 28.8Å/s, have been obtained.

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