Ultrahigh‐vacuum apparatus for the preparation of thin metal bicrystals containing grain boundaries

1986 ◽  
Vol 57 (11) ◽  
pp. 2812-2816 ◽  
Author(s):  
K. R. Milkove ◽  
S. L. Sass
Keyword(s):  
Grain Boundaries ◽  
Ultrahigh Vacuum ◽  
Thin Metal ◽  
Vacuum Apparatus

Metal Microstructures in Advanced CMOS Devices

1996 ◽  
Vol 54 ◽  
pp. 358-359
Author(s):  
L. M. Gignac ◽  
K. P. Rodbell
Keyword(s):  
Grain Boundaries ◽  
Semiconductor Device ◽  
Chemical Vapor ◽  
Microstructural Characterization ◽  
Metal Films ◽  
Thin Metal ◽  
Electrical Performance ◽  
Thin Metal Films ◽  
Chemical Vapor Deposited ◽  
Boundary Properties

As advanced semiconductor device features shrink, grain boundaries and interfaces become increasingly more important to the properties of thin metal films. With film thicknesses decreasing to the range of 10 nm and the corresponding features also decreasing to sub-micrometer sizes, interface and grain boundary properties become dominant. In this regime the details of the surfaces and grain boundaries dictate the interactions between film layers and the subsequent electrical properties. Therefore it is necessary to accurately characterize these materials on the proper length scale in order to first understand and then to improve the device effectiveness. In this talk we will examine the importance of microstructural characterization of thin metal films used in semiconductor devices and show how microstructure can influence the electrical performance. Specifically, we will review Co and Ti silicides for silicon contact and gate conductor applications, Ti/TiN liner films used for adhesion and diffusion barriers in chemical vapor deposited (CVD) tungsten vertical wiring (vias) and Ti/AlCu/Ti-TiN films used as planar interconnect metal lines.

An ultrahigh-vacuum apparatus for resonant diffraction experiments using soft x rays (hν=300–2000 eV)

2009 ◽  
Vol 80 (2) ◽  
pp. 023905 ◽  
Author(s):  
T. Takeuchi ◽  
A. Chainani ◽  
Y. Takata ◽  
Y. Tanaka ◽  
M. Oura ◽  
...  
Keyword(s):  
Ultrahigh Vacuum ◽  
X Rays ◽  
Vacuum Apparatus

Ultrahigh vacuum apparatus for quartz crystal microbalance measurements in the temperature range 4–400 K

2005 ◽  
Vol 76 (2) ◽  
pp. 023904 ◽  
Author(s):  
L. Bruschi ◽  
A. Carlin ◽  
F. Buatier de Mongeot ◽  
F. dalla Longa ◽  
L. Stringher ◽  
...  
Keyword(s):  
Quartz Crystal Microbalance ◽  
Quartz Crystal ◽  
Ultrahigh Vacuum ◽  
Temperature Range ◽  
Vacuum Apparatus

A portable ultrahigh vacuum apparatus for the production andin situcharacterization of clusters and cluster-assembled materials

2002 ◽  
Vol 73 (5) ◽  
pp. 2060-2066 ◽  
Author(s):  
E. Barborini ◽  
F. Siviero ◽  
S. Vinati ◽  
C. Lenardi ◽  
P. Piseri ◽  
...  
Keyword(s):  
Ultrahigh Vacuum ◽  
Vacuum Apparatus
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