Femtosecond investigations of spectral hole burning in semiconductor lasers

1995 ◽  
Vol 66 (13) ◽  
pp. 1650-1652 ◽  
Author(s):  
Chi‐Kuang Sun ◽  
Boris Golubovic ◽  
Hong‐Kyun Choi ◽  
Christine A. Wang ◽  
James G. Fujimoto
Keyword(s):  
Semiconductor Lasers ◽  
Hole Burning ◽  
Spectral Hole Burning ◽  
Spectral Hole

Femtosecond studies of spectral hole burning in semiconductor lasers

2002 ◽  
Author(s):  
C.-K. Sun ◽  
B. Golubovic ◽  
H.K. Choi ◽  
C.A. Wang ◽  
G.D. Sanders ◽  
...  
Keyword(s):  
Semiconductor Lasers ◽  
Hole Burning ◽  
Spectral Hole Burning ◽  
Spectral Hole

Spectral hole burning and gain saturation in short-cavity semiconductor lasers

1992 ◽  
Vol 45 (3) ◽  
pp. 1853-1859 ◽  
Author(s):  
K. Henneberger ◽  
F. Herzel ◽  
S. W. Koch ◽  
R. Binder ◽  
A. E. Paul ◽  
...  
Keyword(s):  
Semiconductor Lasers ◽  
Hole Burning ◽  
Spectral Hole Burning ◽  
Gain Saturation ◽  
Spectral Hole

FEMTOSECOND SPECTRAL HOLE-BURNING IN GaAs/AlGaAs MULTIPLE QUANTUM WELLS

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-511-C5-515 ◽  
Author(s):  
J. L. OUDAR ◽  
J. DUBARD ◽  
F. ALEXANDRE ◽  
D. HULIN ◽  
A. MIGUS ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Hole Burning ◽  
Spectral Hole Burning ◽  
Multiple Quantum ◽  
Spectral Hole

Investigation of the V4+-Centre in 6H- and 4H-SIC by the Method of Spectral-Hole Burning

1998 ◽  
Vol 512 ◽  
Author(s):  
C. Hecht ◽  
R. Kummer ◽  
A. Winnacker
Keyword(s):  
Electronic Properties ◽  
Room Temperature ◽  
Hole Burning ◽  
Band Offset ◽  
Spectral Hole Burning ◽  
Type Ii ◽  
Thermally Stable ◽  
Spectral Hole

ABSTRACTIn the context of spectral-hole burning experiments in 4H- and 6H-SiC doped with vanadium the energy positions of the V4+/5+ level in both polytypes were determined in order to resolve discrepancies in literature. From these numbers the band offset of 6H/4H-SiC is calculated by using the Langer-Heinrich rule, and found to be of staggered type II. Furthermore the experiments show that thermally stable electronic traps exist in both polytypes at room temperature and considerably above, which may result in longtime transient shifts of electronic properties.

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