Methods for a precision measurement of ionic masses and appearance energies using the pulsed‐laser time‐of‐flight atom probe

1984 ◽  
Vol 55 (8) ◽  
pp. 1246-1254 ◽  
Author(s):  
T. T. Tsong ◽  
Y. Liou ◽  
S. B. McLane
Keyword(s):  
Precision Measurement ◽  
Time Of Flight ◽  
Pulsed Laser ◽  
Atom Probe

Pulsed‐laser time‐of‐flight atom‐probe field ion microscope

1982 ◽  
Vol 53 (9) ◽  
pp. 1442-1448 ◽  
Author(s):  
T. T. Tsong ◽  
S. B. McLane ◽  
T. J. Kinkus
Keyword(s):  
Time Of Flight ◽  
Pulsed Laser ◽  
Atom Probe ◽  
Probe Field ◽  
Field Ion Microscope

PULSED-LASER ATOM-PROBE STUDY OF Al-GaAs INTERFACES

1986 ◽  
Vol 47 (C7) ◽  
pp. C7-303-C7-308
Author(s):  
O. NISHIKAWA ◽  
M. YANAGISAWA ◽  
M. NAGAI
Keyword(s):  
Pulsed Laser ◽  
Atom Probe

On the Field Evaporation Behavior of a Model Ni-Al-Cr Superalloy Studied by Picosecond Pulsed-Laser Atom-Probe Tomography

2008 ◽  
Vol 14 (6) ◽  
pp. 571-580 ◽  
Author(s):  
Yang Zhou ◽  
Christopher Booth-Morrison ◽  
David N. Seidman
Keyword(s):  
Atom Probe Tomography ◽  
Mass Spectra ◽  
Pulsed Laser ◽  
Picosecond Laser ◽  
Atom Probe ◽  
Resolving Power ◽  
Noise Levels ◽  
Thermally Activated ◽  
Mass Resolving Power

AbstractThe effects of varying the pulse energy of a picosecond laser used in the pulsed-laser atom-probe (PLAP) tomography of an as-quenched Ni-6.5 Al-9.5 Cr at.% alloy are assessed based on the quality of the mass spectra and the compositional accuracy of the technique. Compared to pulsed-voltage atom-probe tomography, PLAP tomography improves mass resolving power, decreases noise levels, and improves compositional accuracy. Experimental evidence suggests that Ni2+, Al2+, and Cr2+ ions are formed primarily by a thermally activated evaporation process, and not by post-ionization of the ions in the 1+ charge state. An analysis of the detected noise levels reveals that for properly chosen instrument parameters, there is no significant steady-state heating of the Ni-6.5 Al-9.5 Cr at.% tips during PLAP tomography.

Interfacial chemistry in an InAs/GaSb superlattice studied by pulsed laser atom probe tomography

2012 ◽  
Vol 100 (8) ◽  
pp. 083109 ◽  
Author(s):  
M. Müller ◽  
B. Gault ◽  
M. Field ◽  
G. J. Sullivan ◽  
G. D. W. Smith ◽  
...  
Keyword(s):  
Atom Probe Tomography ◽  
Pulsed Laser ◽  
Atom Probe ◽  
Interfacial Chemistry
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