Circuit design for transient measurements of electrical properties of thin metal films and thermal properties of insulating solids or liquids

1984 ◽  
Vol 55 (4) ◽  
pp. 610-613 ◽  
Author(s):  
Silas E. Gustafsson ◽  
Ernest Karawacki ◽  
Mohammad Aslam Chohan
Keyword(s):  
Thermal Properties ◽  
Electrical Properties ◽  
Circuit Design ◽  
Metal Films ◽  
Thin Metal ◽  
Thin Metal Films ◽  
Transient Measurements

scholarly journals Size Effects on Thermal Properties of Thin Metal Films With Rough Surfaces

1990 ◽  
Vol 14 (1) ◽  
pp. 1-16 ◽  
Author(s):  
C. R. Tellier
Keyword(s):  
Thermal Properties ◽  
Thermoelectric Power ◽  
Size Effects ◽  
Bulk Material ◽  
Rough Surfaces ◽  
Metal Films ◽  
Thin Metal ◽  
Thin Metal Films ◽  
Transport Parameters ◽  
Analytical Expressions

By calculating the effects of electronic scattering at rough surfaces by means of a combined Soffer-Cottey model, general theoretical expressions for the size effects in thermal properties of thin metal films are proposed. Simple analytical expressions for the thermoelectric power, Sf, and the thermal conductivity, ℒf, are given under the assumption that the energy dependence of the electronic relaxation time in bulk material may be written in the formτo∼Wm. The size effects in the thermoelectric power are found to depend on the value of m. However, a decrease in the overall size effects is observed in all transport parameters with respect to the predictions of classical theories based on the Fuchs-Sondheimer or the Cottey models. A comparison with data on the thermoelectric power of thin copper, silver and tin films from previous experiments by various workers shows that a combined Soffer-Cottey model is convenient to analyze size effects in thermoelectric properties. The values of the r.m.s, surface roughness obtained from data are physically consistent.

Electrical properties of very thin metal films

1985 ◽  
Vol 131 (1-2) ◽  
pp. 1-14 ◽  
Author(s):  
Horst Hoffmann ◽  
H. Hornauer ◽  
U. Jacob ◽  
J. Vancea
Keyword(s):  
Electrical Properties ◽  
Metal Films ◽  
Thin Metal ◽  
Thin Metal Films

Metal Microstructures in Advanced CMOS Devices

1996 ◽  
Vol 54 ◽  
pp. 358-359
Author(s):  
L. M. Gignac ◽  
K. P. Rodbell
Keyword(s):  
Grain Boundaries ◽  
Semiconductor Device ◽  
Chemical Vapor ◽  
Microstructural Characterization ◽  
Metal Films ◽  
Thin Metal ◽  
Electrical Performance ◽  
Thin Metal Films ◽  
Chemical Vapor Deposited ◽  
Boundary Properties

As advanced semiconductor device features shrink, grain boundaries and interfaces become increasingly more important to the properties of thin metal films. With film thicknesses decreasing to the range of 10 nm and the corresponding features also decreasing to sub-micrometer sizes, interface and grain boundary properties become dominant. In this regime the details of the surfaces and grain boundaries dictate the interactions between film layers and the subsequent electrical properties. Therefore it is necessary to accurately characterize these materials on the proper length scale in order to first understand and then to improve the device effectiveness. In this talk we will examine the importance of microstructural characterization of thin metal films used in semiconductor devices and show how microstructure can influence the electrical performance. Specifically, we will review Co and Ti silicides for silicon contact and gate conductor applications, Ti/TiN liner films used for adhesion and diffusion barriers in chemical vapor deposited (CVD) tungsten vertical wiring (vias) and Ti/AlCu/Ti-TiN films used as planar interconnect metal lines.

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