Maximizing the quantum efficiency of microchannel plate detectors: The collection of photoelectrons from the interchannel web using an electric field

1983 ◽  
Vol 54 (2) ◽  
pp. 171-176 ◽  
Author(s):  
Richard Cordia Taylor ◽  
Michael C. Hettrick ◽  
Roger F. Malina
Keyword(s):  
Electric Field ◽  
Quantum Efficiency ◽  
Microchannel Plate

Chemical method to increase extreme ultraviolet microchannel-plate quantum efficiency

1997 ◽  
Vol 36 (7) ◽  
pp. 1421 ◽  
Author(s):  
Richelieu Hemphill ◽  
Jerry Edelstein ◽  
Doug Rogers
Keyword(s):  
Quantum Efficiency ◽  
Chemical Method ◽  
Extreme Ultraviolet ◽  
Microchannel Plate

The Time Response of Exponential Doping NEA InGaAs Photocathode Applied to near Infrared Streak Cameras

2011 ◽  
Vol 415-417 ◽  
pp. 1403-1406
Author(s):  
Wei Dong Tang ◽  
Wen Zheng Yang ◽  
Zhi Peng Cai ◽  
Chuan Dong Sun
Keyword(s):  
Electric Field ◽  
Quantum Efficiency ◽  
Active Layer ◽  
Near Infrared ◽  
Streak Camera ◽  
Numerical Results ◽  
Time Response ◽  
Transport Time ◽  
Minority Carriers

An exponential doping NEA InGaAs photocathode is theoretically proposed to apply in the near infrared streak camera. The photocathode time response is calculated and analyzed by using a photoelectron non-steady method. The numerical results show that the excited electrons in the InGaAs active layer is accelerated due to the built-in electric field induced by the exponential doping structure, which shortens the transport time of minority carriers in the photocathode and thus, the time response is greatly improved. In addition, the exponential doping InGaAs photocathode possesses time response of less than 10 picoseconds and near-infrared quantum efficiency of 10%.

Tunneling Assisted Photocurrent Multiplication in a-Si Based p-i/Sinx/i-n Structure Junction

1990 ◽  
Vol 192 ◽  
Author(s):  
M. Yoshimi ◽  
K. Hattori ◽  
H. Okamoto ◽  
Y. Hamakawa
Keyword(s):  
Electric Field ◽  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
Systematic Investigation ◽  
High Electric Field ◽  
Optoelectronic Properties ◽  
Localized States

ABSTRACTPhotocurrent multiplication has been observed in a-Si based p−i/SiNx/i−n junction cells under reverse biased high electric field. An apparent external quantum efficiency exceeds 20. A systematic investigation on electric and optoelectronic properties has been made to clarify the mechanism of photocarrier multiplication. The results indicate the possibility of inter-band tunneling via localized states in the a-SiN layer, which is induced by field-redistribution due to the built-up of trapped charges at the a-SiN/a-Si interface.

Simulation of Quantum Efficiency Spectroscopy for Amorphous Silicon P-I-N Junctions

1999 ◽  
Vol 557 ◽  
Author(s):  
Rodney Estwick ◽  
Vikram L. Dalal
Keyword(s):  
Electric Field ◽  
Amorphous Silicon ◽  
Quantum Efficiency ◽  
Applied Voltage ◽  
Forward Bias ◽  
Hole Mobility ◽  
Limited Range ◽  
D Model ◽  
Defect Densities ◽  
Minority Carriers

AbstractQuantum efficiency(QE) spectroscopy of amorphous silicon and alloy solar cells has been used for many years now to determine the mobility-lifetime products for minority carriers. Similarly, matching of I(V) curves, assuming a linear model for collection as a function of applied voltage, has been used to quantify the effects of degradation on cell performance by estimating changes in the collection length [or range] of holes. In this paper, we do a numerical simulation of these techniques, using the AMPS I-D model developed by Fonash and his coworkers. The simulation shows that neither the lifetime nor the electric field in the devices is constant as a function of position. Nor is the electric field a linear function of applied voltage, particularly when the voltage exceeds about half the built-in voltage. The uniformity of the lifetime depends on the applied bias and on the defect densities in the material. This variation in electric field and lifetime and nonlinearity with applied voltage makes questionable some of the conclusions drawn from fitting device I(V) curves, particularly under forward bias. However, when one uses only a limited range of forward bias, or, preferably, make measurements in cells with thicker i layers under reverse bias, one c.an make reasonable estimates of the hole mobility-lifetime(μτ) product or the collection lengthl The simulations also show that indeed, it is the hole μτ product which is the limiting parameter.

Synthesis and Electroluminescence Property of Anthracene Green Fluorescent Derivatives Based on Optimized Side Groups

2021 ◽  
Vol 21 (7) ◽  
pp. 4037-4041
Author(s):  
Sangshin Park ◽  
Hyukmin Kwon ◽  
Seokwoo Kang ◽  
Sunwoo Park ◽  
Hyocheol Jung ◽  
...  
Keyword(s):  
Electric Field ◽  
Energy Conversion ◽  
Current Efficiency ◽  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
High Efficiency ◽  
Molecular Size ◽  
Green Fluorescent ◽  
Fluorescent Derivatives ◽  
Electroluminescence Property

Molecular size of OLED emitting materials is nano-metric size and when it is applied to the electric field it emits the light based on the energy conversion result. As new green fluorescent emitters, N,N,N',N'-Tetra-m-tolyl-anthracene-9,10-diamine (m-Me-TAD) and N,N,N',N'-Tetra-p-tolyl-anthracene-9,10-diamine (p-Me-TAD) were synthesized and the properties were evaluated. In solution state, photoluminescence (PL) maximum wavelength is 517 nm for m-Me-TAD and 529 nm for p-Me-TAD. In electroluminescence (EL) spectra, EL maximum wavelength of m-Me-TAD is 518 nm and p-Me-TAD is 533 nm. The doped device using m-Me-TAD as green fluorescent dopant exhibited current efficiency (CE) of 17.41 cd/A and external quantum efficiency (EQE) of 7.41%. The doped device with p-Me-TAD was optimized in order to achieve a green OLED with high efficiency.

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