Low‐temperature growth of SiC thin films on Si and 6H–SiC by solid‐source molecular beam epitaxy

1995 ◽  
Vol 66 (23) ◽  
pp. 3182-3184 ◽  
Author(s):  
A. Fissel ◽  
B. Schröter ◽  
W. Richter
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Temperature Growth ◽  
Low Temperature Growth

Low-temperature growth of Ge1−xSnx thin films with strain control by molecular beam epitaxy

2012 ◽  
Vol 520 (11) ◽  
pp. 3927-3930 ◽  
Author(s):  
Hai Lin ◽  
Robert Chen ◽  
Yijie Huo ◽  
Theodore I. Kamins ◽  
James S. Harris
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Strain Control ◽  
Temperature Growth ◽  
Low Temperature Growth

Low‐temperature growth of high resistivity GaP by gas‐source molecular beam epitaxy

1992 ◽  
Vol 61 (14) ◽  
pp. 1646-1648 ◽  
Author(s):  
J. Ramdani ◽  
Y. He ◽  
M. Leonard ◽  
N. El‐Masry ◽  
S. M. Bedair
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
High Resistivity ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Gas Source

Low-temperature growth properties of Si1−xGex by disilane and solid-Ge molecular beam epitaxy

1998 ◽  
Vol 193 (4) ◽  
pp. 535-540 ◽  
Author(s):  
J.P. Liu ◽  
M.Y. Kong ◽  
J.P. Li ◽  
X.F. Liu ◽  
D.D. Huang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Growth Properties
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