Methods for the grinding and polishing of sphere samples

1981 ◽  
Vol 52 (2) ◽  
pp. 262-264 ◽  
Author(s):  
Joseph N. Paranto ◽  
Carl E. Patton
Keyword(s):  
Grinding And Polishing

Searching for the causes why some of the paintings by Mihaly Munkacsy are darkening

1990 ◽  
Vol 48 (2) ◽  
pp. 204-205
Author(s):  
Imre Pozsgai ◽  
Klara Erdöhalmi-Torok
Keyword(s):  
Electron Beam ◽  
Cross Section ◽  
Polyester Resin ◽  
National Gallery ◽  
X Ray ◽  
Art Historians ◽  
Made In ◽  
Grinding And Polishing

The paintings by the great Hungarian master Mihaly Munkacsy (1844-1900) made in an 8-9 years period of his activity are deteriorating. The most conspicuous sign of the deterioration is an intensive darkening. We have made an attempt by electron beam microanalysis to clarify the causes of the darkening. The importance of a study like this is increased by the fact that a similar darkening can be observed on the paintings by Munkacsy’s contemporaries e.g Courbet and Makart. A thick brown mass the so called bitumen used by Munkacsy for grounding and also as a paint is believed by the art historians to cause the darkening.For this study, paint specimens were taken from the following paintings: “Studio”, “Farewell” and the “Portrait of the Master’s Wife”, all of them are the property of the Hungarian National Gallery. The paint samples were embedded in a polyester resin “Poly-Pol PS-230” and after grinding and polishing their cross section was used for x-ray mapping.

Glass Grinding and Polishing

1917 ◽  
Vol 83 (2159supp) ◽  
pp. 308-310
Author(s):  
James Weir French
Keyword(s):  
Grinding And Polishing

Electrical Invasiveness of Grinding and Polishing Silicon Integrated Circuits Down to 1 μm Remaining Silicon Thickness

2016 ◽  
Author(s):  
Robert Chivas ◽  
Scott Silverman ◽  
Michael DiBattista ◽  
Ulrike Kindereit
Keyword(s):  
Integrated Circuits ◽  
Failure Analysis ◽  
Electron Hole ◽  
Analysis Techniques ◽  
Silicon Integrated Circuits ◽  
Electron Hole Pair ◽  
Pair Generation ◽  
Silicon Thickness ◽  
Performance Timing ◽  
Grinding And Polishing

Abstract Anticipating the end of life for IR-based failure analysis techniques, a method of global backside preparation to ultra-thin remaining silicon thickness (RST) has been developed. When the remaining silicon is reduced, some redistribution of stress is expected, possibly altering the performance (timing) of integrated circuits in addition to electron-hole pair generation. In this work, a study of the electrical invasiveness due to grinding and polishing silicon integrated circuits to ultra-thin (< 5 um global, ~ 1 um local) remaining thickness is presented.

Preparation of Large Area Cross-Sectional Tem Specimen of Semiconducting Heteroepitaxial Materials

1991 ◽  
Vol 254 ◽  
Author(s):  
M. Tamura ◽  
S. Aoki
Keyword(s):  
Sample Preparation ◽  
Film Growth ◽  
General Information ◽  
One Dimension ◽  
Main Principle ◽  
Large Area ◽  
Cross Sectional ◽  
Growth Modes ◽  
Present Technique ◽  
Grinding And Polishing

AbstractThe sample preparation procedures which enable us to observe large areas over a few tens of microns in one-dimension of semiconducting heteroepitaxial materials are described. The main principle involves the careful grinding and polishing of samples. In these procedures, another side thinning of the specimen after finishing initial side polishing is carried out using a sample platform by hand throughout all of the following steps. It is shown that for some typical examples of heteroepitaxial films general information concerning the film growth modes and structures, as well as the defect morphologies and natures introduced during growth can be effectively obtained by using the present technique.

Development of X-ray mirrors manufacturing process with ELID-grinding and polishing methods

2008 ◽  
Vol 1 (3/4) ◽  
pp. 274 ◽  
Author(s):  
Weimin Lin ◽  
Shin ya Morita ◽  
Yoshihiro Uehara ◽  
Hitoshi Ohmori
Keyword(s):  
Manufacturing Process ◽  
X Ray ◽  
Elid Grinding ◽  
Grinding And Polishing
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