Simple flying spot scanner for electron beam lithography on a scanning electron microscope without beam blanking capability

1980 ◽  
Vol 51 (7) ◽  
pp. 992-994 ◽  
Author(s):  
P. Grabbe
Keyword(s):  
Electron Beam ◽  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Electron Beam Lithography ◽  
Flying Spot ◽  
Scanning Electron

Spot Electron-Beam Lithography as a Novel Method of High Resolution Pattern Nanofabrication

2014 ◽  
Vol 215 ◽  
pp. 459-461
Author(s):  
Alexander S. Samardak ◽  
Margarita V. Anisimova ◽  
Alexey V. Ognev ◽  
Vadim Yu. Samardak ◽  
Liudmila A. Chebotkevich
Keyword(s):  
Electron Beam ◽  
Electron Microscope ◽  
High Resolution ◽  
Scanning Electron Microscope ◽  
Electron Beam Lithography ◽  
The Novel ◽  
Practical Applications ◽  
Novel Method ◽  
20 Nm ◽  
Scanning Electron

We present a novel method of pattern nanofabrication with high resolution and small shape defects using the traditional electron-beam lithography (EBL) or only a scanning electron microscope (SEM). Our method of Spot EBL is extremely fast, highly scalable on big areas, capable of sub-20 nm resolution and fabrication of polymer patterns with complicated shapes. We show the nanostructure images fabricated by Spot EBL and propose practical applications of the novel method.

Negative Pattern Scheme (NPS) Design for Nanowire Formation Using Scanning Electron Microscope Based Electron Beam Lithography Technique

2013 ◽  
Vol 832 ◽  
pp. 419-422 ◽  
Author(s):  
Mohammad Nuzaihan Md Nor ◽  
Uda Hashim ◽  
Siti Fatimah Abdul Rahman ◽  
Tijjani Adam
Keyword(s):  
Electron Beam ◽  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Electron Beam Lithography ◽  
Optical Characterization ◽  
Negative Pattern ◽  
Force Microscopy ◽  
Atomic Force ◽  
Negative Tone ◽  
Scanning Electron

In this work, we report the used of Negative Pattern Scheme (NPS) by Electron Microscope Based Electron Beam Lithography (EBL) Technique in connection with scanning electron microscope (SEM) for creating extremely fine nanowires. These patterns have been designed using GDSII Editor and directly transferred on the sample coated with ma-N 2400 Series as the negative tone e-beam resist. The NPS designs having line width of approximately 100 nm are successfully fabricated at our lab. The profile of the nanowire can be precisely controlled by this technique. The optical characterization that is applied to check the nanowires structure using SEM and Atomic Force Microscopy (AFM).

X-ray micro tomography in the scanning electron microscope

1978 ◽  
Vol 36 (1) ◽  
pp. 106-107 ◽  
Author(s):  
W. Brünger
Keyword(s):  
Electron Beam ◽  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Target Surface ◽  
The Body ◽  
X Rays ◽  
Cross Sectional ◽  
X Ray ◽  
Micro Tomography ◽  
Scanning Electron

Reconstructive tomography is a new technique in diagnostic radiology for imaging cross-sectional planes of the human body /1/. A collimated beam of X-rays is scanned through a thin slice of the body and the transmitted intensity is recorded by a detector giving a linear shadow graph or projection (see fig. 1). Many of these projections at different angles are used to reconstruct the body-layer, usually with the aid of a computer. The picture element size of present tomographic scanners is approximately 1.1 mm2.Micro tomography can be realized using the very fine X-ray source generated by the focused electron beam of a scanning electron microscope (see fig. 2). The translation of the X-ray source is done by a line scan of the electron beam on a polished target surface /2/. Projections at different angles are produced by rotating the object.During the registration of a single scan the electron beam is deflected in one direction only, while both deflections are operating in the display tube.

High Resolution Scanning Electron Microscopy

1991 ◽  
Vol 49 ◽  
pp. 478-479
Author(s):  
David Joy ◽  
James Pawley
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Electron Beam ◽  
Electron Microscope ◽  
High Resolution ◽  
Scanning Electron Microscope ◽  
Electron Probe ◽  
Impact Point ◽  
Interaction Volume ◽  
Scanning Electron

The scanning electron microscope (SEM) builds up an image by sampling contiguous sub-volumes near the surface of the specimen. A fine electron beam selectively excites each sub-volume and then the intensity of some resulting signal is measured. The spatial resolution of images made using such a process is limited by at least three factors. Two of these determine the size of the interaction volume: the size of the electron probe and the extent to which detectable signal is excited from locations remote from the beam impact point. A third limitation emerges from the fact that the probing beam is composed of a finite number of discrete particles and therefore that the accuracy with which any detectable signal can be measured is limited by Poisson statistics applied to this number (or to the number of events actually detected if this is smaller).

Slow-Scan CCD Observation of Backscattering Patterns in SEM

1992 ◽  
Vol 50 (2) ◽  
pp. 1308-1309
Author(s):  
F. Ouyang ◽  
D. A. Ray ◽  
O. L. Krivanek
Keyword(s):  
Electron Beam ◽  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Dynamic Range ◽  
High Sensitivity ◽  
Lens System ◽  
Wide Dynamic Range ◽  
Peltier Cooler ◽  
Diffraction Patterns ◽  
Scanning Electron

Electron backscattering Kikuchi diffraction patterns (BKDP) reveal useful information about the structure and orientation of crystals under study. With the well focused electron beam in a scanning electron microscope (SEM), one can use BKDP as a microanalysis tool. BKDPs have been recorded in SEMs using a phosphor screen coupled to an intensified TV camera through a lens system, and by photographic negatives. With the development of fiber-optically coupled slow scan CCD (SSC) cameras for electron beam imaging, one can take advantage of their high sensitivity and wide dynamic range for observing BKDP in SEM.We have used the Gatan 690 SSC camera to observe backscattering patterns in a JEOL JSM-840A SEM. The CCD sensor has an active area of 13.25 mm × 8.83 mm and 576 × 384 pixels. The camera head, which consists of a single crystal YAG scintillator fiber optically coupled to the CCD chip, is located inside the SEM specimen chamber. The whole camera head is cooled to about -30°C by a Peltier cooler, which permits long integration times (up to 100 seconds).

Sign in / Sign up

Export Citation Format

Share Document