Interfacial neutral‐ and charged‐dangling‐bond densities between hydrogenated amorphous silicon and hydrogenated amorphous silicon nitride in top nitride and bottom nitride structures

1995 ◽  
Vol 66 (20) ◽  
pp. 2718-2720 ◽  
Author(s):  
Hoonkee Min ◽  
Iwao Fukushi ◽  
Atsushi Masuda ◽  
Akiharu Morimoto ◽  
Minoru Kumeda ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Dangling Bond ◽  
Amorphous Silicon Nitride ◽  
Hydrogenated Amorphous

Optical and Electrical Properties of Hydrogenated Amorphous Silicon Nitride Films Deposited in Various PECVD systems

1986 ◽  
Vol 68 ◽  
Author(s):  
Nancy Voke ◽  
Jerzy Kanicki
Keyword(s):  
Silicon Nitride ◽  
Electrical Properties ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Optical And Electrical Properties ◽  
Amorphous Silicon Nitride ◽  
Full Characterization ◽  
Silicon Nitride Films ◽  
Hydrogenated Amorphous

Hydrogenated amorphous silicon nitride films, prepared in various commercially available plasma enhanced chemical vapor deposition systems, have been investigated in terms of different deposition conditions.The full characterization of these gate insulators has been carried out by different techniques.Experimental data and interesting findings obtained from this study are presented.Special attention has been devoted to the influence of hydrogen on optical and electrical properties.

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