Representative reflectance anisotropy spectra from Al(x)Ga(1−x)As layers (x=0 to 1.0) grown on GaAs(001) by molecular beam epitaxy

1995 ◽  
Vol 66 (15) ◽  
pp. 1930-1932 ◽  
Author(s):  
K. C. Rose ◽  
S. J. Morris ◽  
D. I. Westwood ◽  
D. A. Woolf ◽  
R. H. Williams ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Reflectance Anisotropy ◽  
Anisotropy Spectra

Surface processes responsible for reflectance-anisotropy oscillations during molecular beam epitaxy growth of GaAs(001)

1995 ◽  
Vol 337 (1-2) ◽  
pp. 103-108 ◽  
Author(s):  
J. Rumberg ◽  
J.-T. Zettler ◽  
K. Stahrenberg ◽  
K. Ploska ◽  
W. Richter ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Surface Processes ◽  
Molecular Beam Epitaxy Growth ◽  
Reflectance Anisotropy

Reflectance anisotropy as a surface science probe of the growth of InAs on (001) GaAs by molecular beam epitaxy

1993 ◽  
Vol 63 (4) ◽  
pp. 503-505 ◽  
Author(s):  
S. R. Armstrong ◽  
M. E. Pemble ◽  
A. G. Taylor ◽  
P. N. Fawcette ◽  
J. H. Neave ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Surface Science ◽  
Molecular Beam ◽  
Reflectance Anisotropy

In-situ monitoring of Si and SiGe growth on Si(001) surfaces during gas-source molecular beam epitaxy using reflectance anisotropy

1996 ◽  
Vol 164 (1-4) ◽  
pp. 40-46 ◽  
Author(s):  
J. Zhang ◽  
A.K. Lees ◽  
A.G. Taylor ◽  
D. Raisbeck ◽  
N. Shukla ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
In Situ Monitoring ◽  
Reflectance Anisotropy ◽  
Gas Source

A Reflection High Energy Electron Diffraction–Reflectance Anisotropy Spectroscopy Study of Silicon Growth Dynamics During Gas Source Molecular Beam Epitaxy from Silanes

1998 ◽  
Vol 05 (03n04) ◽  
pp. 761-767 ◽  
Author(s):  
B. A. Joyce ◽  
J. Zhang ◽  
A. G. Taylor ◽  
A. K. Lees
Keyword(s):  
Molecular Beam Epitaxy ◽  
Electron Diffraction ◽  
Molecular Beam ◽  
Film Growth ◽  
Growth Dynamics ◽  
Hydrogen Desorption ◽  
High Energy ◽  
Energy Electron ◽  
High Energy Electron ◽  
Reflectance Anisotropy

Molecular beam epitaxy (MBE) provides an ideal experimental vehicle for the in situ study of thin film growth dynamics. By using a combination of reflection high energy electron diffraction (RHEED) and reflectance anisotropy (difference) spectroscopy [RA(D)S], it is possible to separate morphological (long range order) and local electronic structure effects, which we demonstrate with the growth of silicon films from disilane ( Si 2 H 6) on Si(001) (2 × 1)+(1 × 2) reconstructed surfaces. The rate-limiting step in Si growth from both monosilane ( SiH 4) and disilane is the desorption of molecular hydrogen and we have found using RAS that, over a significant range of temperature and coverage, hydrogen desorption follows zeroth order kinetics as the result of a step-mediated process. Finally, we show how this influences the growth rate on substrates of differing degrees of vicinality.

Real Time Control of III-V Semiconductor Surfaces During Movpe Growth by Reflectance Anisotropy Spectroscopy

1993 ◽  
Vol 334 ◽  
Author(s):  
K. Ploska ◽  
W. Richter ◽  
F. Reinhardt ◽  
J. JÖnsson ◽  
J. Rumberg ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Real Time ◽  
Molecular Beam ◽  
Substrate Surface ◽  
Exchange Reactions ◽  
Real Time Control ◽  
Time Resolved ◽  
Reflectance Anisotropy ◽  
Time Control ◽  
Metalorganic Molecular Beam Epitaxy

AbstractReflectance anisotropy spectroscopy (RAS) is presented as real time analytical tool for metalorganic vapourphase epitaxy (MOVPE) of III-V-semiconductors. This optical method derives its surface sensitivity from the anisotropy of surface structures. It is shown that it is possible to monitor with RAS the oxide desorption from the substrate and that the substrate surface conditions thereafter, still in the pregrowth stage, can be correlated with certain reconstructions of the (001)-surfaces of InP and GaAs. The latter is possible through simultaneous RAS and RHEED measurements during MBE (molecular beam epitaxy) or MOMBE (metalorganic molecular beam epitaxy). Characteristic spectral features are also observed for other binary or ternary III-V-semiconductors. Time resolved measurements during growth give monolayer resolution for the growth rate in the case of GaAs. In the study of heterointerface growth exchange reactions between As and P together with their corresponding reaction time constants can be monitored and conclusions for the epitaxial growth procedure can be drawn.

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