scholarly journals Characterization of the near‐interface region of chemical vapor deposited diamond films on silicon by backscatter Kikuchi diffraction

1994 ◽  
Vol 65 (14) ◽  
pp. 1781-1783 ◽  
Author(s):  
S. Geier ◽  
M. Schreck ◽  
R. Hessmer ◽  
B. Rauschenbach ◽  
B. Stritzker ◽  
...  
Keyword(s):  
Diamond Films ◽  
Chemical Vapor ◽  
Interface Region ◽  
Chemical Vapor Deposited

Crystalline perfection of chemical vapor deposited diamond films

1990 ◽  
Vol 5 (8) ◽  
pp. 1591-1594 ◽  
Author(s):  
A. V. Hetherington ◽  
C. J. H. Wort ◽  
P. Southworth
Keyword(s):  
Grain Boundaries ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Stacking Faults ◽  
Chemical Vapor ◽  
Cvd Diamond ◽  
Growth Conditions ◽  
Crystalline Perfection ◽  
Planar Defects ◽  
Chemical Vapor Deposited

The crystalline perfection of microwave plasma assisted chemical vapor deposited (MPACVD) diamond films grown under various conditions has been examined by TEM. Most CVD diamond films thus far reported contain a high density of defects, predominantly twins and stacking faults on {111} planes. We show that under appropriate growth conditions, these planar defects are eliminated from the center of the crystallites, and occur only at grain boundaries where the growing crystallites meet.

Characterization of Low Temperature Chemical Vapor Deposited Gd2O3 Doped CeO2 Films

2011 ◽  
Vol 485 ◽  
pp. 133-136 ◽  
Author(s):  
Ryoichi Saotome ◽  
Naoki Wakiya ◽  
Takanori Kiguchi ◽  
Jeffrey S. Cross ◽  
Osamu Sakurai ◽  
...  
Keyword(s):  
Activation Energy ◽  
Vapor Deposition ◽  
Electrochemical Impedance ◽  
Pulsed Laser ◽  
Chemical Vapor ◽  
Partial Pressures ◽  
Chemical Vapor Deposited ◽  
Electrical Conductivities ◽  
Deposited Films

Highly oriented and polycrystalline Gd2O3 doped CeO2 thin films were prepared on α-Al2O3(0001) substrates by chemical vapor deposition, using Ce(C5H4C2H5)3 and Gd(C5H4C2H5)3 as precursors. The compositions of the films were controlled by optimizing the vaporization pressure of Gd precursor under the constant vaporization condition of Ce precursor. In-plane electrical conductivities of the films at various temperatures and oxygen partial pressures were evaluated by electrochemical impedance spectroscopy measurements. The activation energy of the film was determined as 0.94 eV, which is comparable with that of pulsed laser deposited films.

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