Photoluminescence determination of the nitrogen doping concentration in 6H‐SiC

1994 ◽  
Vol 65 (19) ◽  
pp. 2457-2459 ◽  
Author(s):  
A. Henry ◽  
O. Kordina ◽  
C. Hallin ◽  
C. Hemmingsson ◽  
E. Janzén
Keyword(s):  
Nitrogen Doping ◽  
Doping Concentration

Characterization of Strain Due to Nitrogen Doping Concentration Variations in Heavy Doped 4H-SiC

2017 ◽  
Vol 47 (2) ◽  
pp. 938-943 ◽  
Author(s):  
Yu Yang ◽  
Jianqiu Guo ◽  
Balaji Raghothamachar ◽  
Xiaojun Chan ◽  
Taejin Kim ◽  
...  
Keyword(s):  
Nitrogen Doping ◽  
Doping Concentration

The Method for Enhancing Nitrogen Doping in 6H-SiC Single Crystals Grown by Sublimation Process: The Effect of Si Addition in SiC Powder Source

2006 ◽  
Vol 527-529 ◽  
pp. 55-58 ◽  
Author(s):  
Kwan Mo Kim ◽  
Soo Hyung Seo ◽  
Jae Woo Kim ◽  
Joon Suk Song ◽  
Myung Hwan Oh ◽  
...  
Keyword(s):  
Thermal Treatment ◽  
Single Crystals ◽  
Nitrogen Doping ◽  
Doping Concentration ◽  
Silicon Powder ◽  
Mixed Powder ◽  
Nitrogen Doped ◽  
Sublimation Method ◽  
Si Content ◽  
Si Addition

The variation of nitrogen doping concentration was systematically investigated with respect to the amount of silicon powder added to the SiC powder for growing n-type 6H-SiC single crystal by the sublimation method. To change intentionally the Si content in the SiC powder, 0wt% to 2wt% of a silicon powder was added to first-thermal treated SiC powder and the mixed powder was treated again at 1800oC for 3 hours to eliminate excess free-metallic silicon. Nitrogen doped 6H-SiC single crystals were grown by using 2nd-thermal treatment SiC powder at fixed N2/(Ar + N2) (3%). The nitrogen doping concentration of 6H-SiC crystals increased with increasing Si content in the SiC powder. In this work, we could identify that the additional silicon powder in SiC powder plays a role in the enhancement of nitrogen doping in 6H-SiC crystals grown by the sublimation method.

scholarly journals Contactless determination of doping concentration and resistivity of silicon wafers with cavity ring-down technique

2020 ◽  
Vol 16 ◽  
pp. 102939
Author(s):  
Qian Wang ◽  
Chunyu Zhang ◽  
Yujun Du ◽  
Rong Liu ◽  
Linqiu Tan ◽  
...  
Keyword(s):  
Doping Concentration ◽  
Silicon Wafers ◽  
Cavity Ring Down

Determination of the doping concentration profile in Si δ-doped GaAs layers using micro-Raman spectroscopy of bevelled structures

2006 ◽  
Vol 497 (1-2) ◽  
pp. 7-15 ◽  
Author(s):  
R. Srnanek ◽  
J. Geurts ◽  
M. Lentze ◽  
G. Irmer ◽  
J. Kovac ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Concentration Profile ◽  
Doping Concentration ◽  
Micro Raman Spectroscopy

Determination of the Lifetime Influence Upon the Conversion Efficiency of the Photovoltaic Silicon Solar Cells

2017 ◽  
Vol 17 (2) ◽  
pp. 20-24
Author(s):  
G. Preduşcă ◽  
C. Fluieraru
Keyword(s):  
Solar Cells ◽  
Energy Level ◽  
Conversion Efficiency ◽  
Light Absorption ◽  
Doping Concentration ◽  
Life Time ◽  
Silicon Solar Cells ◽  
Recombination Processes

AbstractIf the electrons and holes in excess are created in a semiconductor, either by means of light absorption, or using other methods, the thermic balance is disturbed, therefore these electrons and holes should be nullified after the source had been stopped. This process is named recombination. There are three main recombination types: radioactive, Auger and deep energy level recombination. All three are based on the doping concentration to a certain point. The life time is determined using the three recombination processes in semiconductor.

Activating MoS2 with Super-High Nitrogen-Doping Concentration as Efficient Catalyst for Hydrogen Evolution Reaction

2019 ◽  
Vol 123 (17) ◽  
pp. 10917-10925 ◽  
Author(s):  
Qian Yang ◽  
Zegao Wang ◽  
Lichun Dong ◽  
Wenbin Zhao ◽  
Yan Jin ◽  
...  
Keyword(s):  
Hydrogen Evolution ◽  
Hydrogen Evolution Reaction ◽  
Nitrogen Doping ◽  
Doping Concentration ◽  
High Nitrogen ◽  
Efficient Catalyst

Novel characterization method for the nitrogen doping concentration in heavily nitrogen-doped 4H-SiC crystals by Raman scattering microscopy

2020 ◽  
Vol 59 (5) ◽  
pp. 051003 ◽  
Author(s):  
Kaito Yokomoto ◽  
Kentaro Shioura ◽  
Masahiro Yabu ◽  
Masataka Nakano ◽  
Noboru Ohtani
Keyword(s):  
Raman Scattering ◽  
Nitrogen Doping ◽  
Doping Concentration ◽  
Nitrogen Doped
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