Time‐resolved decay of the blue emission in porous silicon

1994 ◽  
Vol 65 (19) ◽  
pp. 2451-2453 ◽  
Author(s):  
C. I. Harris ◽  
M. Syväjärvi ◽  
J. P. Bergman ◽  
O. Kordina ◽  
A. Henry ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Blue Emission ◽  
Time Resolved

Comparative Optical Studies of Chemically Synthesized Silicon Nanocrystals

1996 ◽  
Vol 452 ◽  
Author(s):  
Gildardo R. Delgado ◽  
Howard W.H. Lee ◽  
Susan M. Kauzlarich ◽  
Richard A. Bley
Keyword(s):  
Porous Silicon ◽  
Silicon Nanocrystals ◽  
Surface Passivation ◽  
Theoretical Calculations ◽  
Dominant Role ◽  
Blue Emission ◽  
Surface States ◽  
Si Nanocrystals ◽  
Optical And Electronic Properties ◽  
Passivation Layers

AbstractWe studied the optical and electronic properties of silicon nanocrystals derived from two distinct fabrication procedures. One technique uses a controlled chemical reaction. In the other case, silicon nanocrystals are produced by ultrasonic fracturing of porous silicon layers. We report on the photoluminescence, photoluminescence excitation, and absorption spectroscopy of various size distributions derived from these techniques. We compare the different optical properties of silicon nanocrystals made this way and contrast them with that observed in porous silicon. Our results emphasize the dominant role of surface states in these systems as manifested by the different surface passivation layers present in these different fabrication techniques. Experimental absorption measurements are compared to theoretical calculations with good agreement. Our results provide compelling evidence for quantum confinement in both types of Si nanocrystals. Our results also indicate that the blue emission from very small Si nanocrystals corresponds to the bandedge emission, while the red emission arises from traps.

Influence of the Surfaces Characteristics on the Luminescent Property of Porous Silicon

2014 ◽  
Vol 1052 ◽  
pp. 181-187
Author(s):  
Yan Li Ding ◽  
Yue Zhao ◽  
Yue Feng ◽  
Xiao Yan Liang ◽  
Lin Jun Wang ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Porous Silicon ◽  
Luminescent Property ◽  
Blue Emission ◽  
Surface States ◽  
Green Emission ◽  
Decay Measurement ◽  
Photoconductivity Decay

Photoluminescence of porous silicon (PS) prepared by different etched time was studied. The photoluminescence might originate from the recombination of carriers and surface states, which was proved by FTIR, Raman spectroscopy and SEM. Furthermore, the hydrogen-related groups on the PS surface could eliminate the surface states for the blue emission, but the quantities of surface states for the green emission were depended on the uncovered area on the PS surface. Moreover, the shape of photoconductivity curve was depended on the quantities of the surface states, which also was related to the uncovered area on the PS surface. In addition, the results of the microwave-detected photoconductivity decay measurement indicated thatthe defects on the PS surface increased with the increase of the etched time, which would be related to the increase of the depth of pores.

Blue emission in porous silicon: Oxygen-related photoluminescence

1994 ◽  
Vol 49 (11) ◽  
pp. 7821-7824 ◽  
Author(s):  
L. Tsybeskov ◽  
Ju. V. Vandyshev ◽  
P. M. Fauchet
Keyword(s):  
Porous Silicon ◽  
Blue Emission ◽  
Silicon Oxygen

Blue emission of porous silicon intensified by boron deposition

2005 ◽  
Vol 40 (18) ◽  
pp. 5071-5073 ◽  
Author(s):  
Yue Zhao ◽  
Dongsheng Li ◽  
Deren Yang ◽  
Minghua Jiang
Keyword(s):  
Porous Silicon ◽  
Blue Emission

Instrumentation for Reliably Determining Porous Silicon Photoluminescence Responses to Gaseous Analyte Vapors

2016 ◽  
Vol 70 (12) ◽  
pp. 1974-1980 ◽  
Author(s):  
Justin M. Reynard ◽  
Nathan S. Van Gorder ◽  
Caley A. Richardson ◽  
Richie D. Eriacho ◽  
Frank V. Bright
Keyword(s):  
Porous Silicon ◽  
Vapor Concentration ◽  
Photoluminescence Intensity ◽  
Spectral Measurements ◽  
Temperature Dependent ◽  
Time Resolved ◽  
Hyper Spectral ◽  
New Instrumentation ◽  
Time Resolved Photoluminescence ◽  
New System

We report new instrumentation for rapidly and reliably measuring the temperature-dependent photoluminescence response from porous silicon as a function of analyte vapor concentration. The new system maintains the porous silicon under inert conditions and it allows on-the-fly steady-state and time-resolved photoluminescence intensity and hyper-spectral measurements between 293 K and 450 K. The new system yields reliable data at least 100-fold faster in comparison to previous instrument platforms.

Fast Photoluminescence from Porous Silicon

1992 ◽  
Vol 283 ◽  
Author(s):  
V. Petrova-Koch ◽  
T. Muschik ◽  
D. I. Kovalev ◽  
F. Koch ◽  
V. Lehmann
Keyword(s):  
Porous Silicon ◽  
Response Time ◽  
Spectral Range ◽  
Luminescence Band ◽  
Room Temperature ◽  
Internal Surface ◽  
Porous Si ◽  
Time Resolved ◽  
Processed Material ◽  
Defect Luminescence

ABSTRACTTime-resolved studies of the visible photoluminescence in porous silicon with three different coverages of the internal surface are reported. We use aged, naturally oxidized porous Si (oxihydride), rapid thermal processed material (oxide) and samples stored in HF (pure hydride). A new, fast luminescence band in the blue-green spectral range and with response time less than 100 ns is observed at room temperature in each of the samples, although with different intensities. The observations prove that this is not an oxide-defect luminescence. We speculate on mechanisms for the origin of the fast luminescence in nanometer-size crystallites of Si.

Time resolved optical Bloch oscillations in porous silicon superlattice structures

2005 ◽  
Vol 2 (9) ◽  
pp. 3283-3287 ◽  
Author(s):  
Mher Ghulinyan ◽  
Claudio J. Oton ◽  
Zeno Gaburro ◽  
Riccardo Sapienza ◽  
Paola Costantino ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Bloch Oscillations ◽  
Time Resolved ◽  
Superlattice Structures

Steady-state and time-resolved spectroscopy of porous silicon

1996 ◽  
Vol 70 (1-6) ◽  
pp. 364-376 ◽  
Author(s):  
S.V. Gaponenko ◽  
E.P. Petrov ◽  
U. Woggon ◽  
O. Wind ◽  
C. Klingshirn ◽  
...  
Keyword(s):  
Steady State ◽  
Porous Silicon ◽  
Time Resolved ◽  
Time Resolved Spectroscopy

scholarly journals Time Resolved Photoluminescence of Cubic Mg Doped GaN

1999 ◽  
Vol 572 ◽  
Author(s):  
R. Seitz ◽  
C. Gaspar ◽  
T. Monteiro ◽  
E. Pereira ◽  
B. Schoettker ◽  
...  
Keyword(s):  
Blue Emission ◽  
Spectral Shift ◽  
Excitation Density ◽  
Acceptor Pair ◽  
Time Resolved ◽  
Deep Donor ◽  
Cubic Gan ◽  
Donor Acceptor ◽  
Time Resolved Photoluminescence ◽  
Mg Doped

ABSTRACTMg doped cubic GaN layers were studied by steady state and time resolved photoluminescence. The blue emission due to Mg doping can be decomposed in three bands. The decay curves and the spectral shift with time delays indicates donor-acceptor pair behaviour. This can be confirmed by excitation density dependent measurements. Furthermore temperature dependent analysis shows that the three emissions have one impurity in common. We propose that this is an acceptor level related to the Mg incorporation and the three deep donor levels are due to compensation effects.

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