Deep‐oxide planar buried‐heterostructure AlGaAs–GaAs quantum well heterostructure laser diodes

1994 ◽  
Vol 65 (25) ◽  
pp. 3221-3223 ◽  
Author(s):  
M. R. Krames ◽  
E. I. Chen ◽  
N. Holonyak
Keyword(s):  
Quantum Well ◽  
Laser Diodes ◽  
Heterostructure Laser ◽  
Buried Heterostructure

High-Performance Strain-Compensated Multiple Quantum Well Planar Buried Heterostructure Laser Diodes with Low Leakage Current

1996 ◽  
Vol 35 (Part 1, No. 3) ◽  
pp. 1751-1757 ◽  
Author(s):  
Ho Sung Cho ◽  
Dong Hoon Jang ◽  
Jung Kee Lee ◽  
Kyung Hyun Park ◽  
Jeong Soo Kim ◽  
...  
Keyword(s):  
Quantum Well ◽  
Leakage Current ◽  
High Performance ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Multiple Quantum ◽  
Low Leakage ◽  
Heterostructure Laser ◽  
Low Leakage Current ◽  
Buried Heterostructure

All-selective MOVPE-grown 1.3-μm strained multi-quantum-well buried-heterostructure laser diodes

1999 ◽  
Vol 35 (3) ◽  
pp. 368-376 ◽  
Author(s):  
Y. Sakata ◽  
T. Hosoda ◽  
Y. Sasaki ◽  
S. Kitamura ◽  
M. Yamamoto ◽  
...  
Keyword(s):  
Quantum Well ◽  
Laser Diodes ◽  
Heterostructure Laser ◽  
Buried Heterostructure ◽  
Multi Quantum Well

Impurity-Induced Layer Disordering in AlxGa1−xAs-GaAs Quantum well Heterostructures -

1988 ◽  
Vol 126 ◽  
Author(s):  
D. G. Deppe ◽  
L. J. Guido ◽  
N. Holonyak
Keyword(s):  
Experimental Data ◽  
Quantum Well ◽  
Laser Diodes ◽  
Growth Direction ◽  
High Power Laser ◽  
Power Laser ◽  
Frenkel Defects ◽  
Buried Heterostructure ◽  
And Diffusion ◽  
Disordered Regions

ABSTRACTSelective interdiffusion of Al and Ga at AlxGa1−x As-GaAs heterointerfaces can be carried out by conventional masking procedures and diffusion of acceptor impurities (e.g., Zn), or donor impurities (e.g., Si), or also by ion implantation. This process, impurity-induced layer disordering (IILD), makes it possible to convert quantum well heterostructures (QWHs) such as AlxGa1−xAs-GaAs superlattices (SLs) into bulk homogeneous AlyGa1−yAs where y is the average Al composition of the QWH or SL. Since th IILY process is maskable and thus selective, heterojunctions can be formed in directions perpendicular to the crystal growth direction, i.e., between as-grown “ordered” and IILD “disordered” regions. To date this process has been used most effectively in the fabrication of buriedheterostructure QW lasers, single and multiple stripe, where the disordered regions provide both optical and electrical confinement. The IILD process has also been used to advantage in the fabrication of high power laser diodes with non-absorbing “windows” at the laser facets and thus with better immunity from facet damage. In this paper we present data on the application of the IILD process to the fabrication of buried-heterostructure QW laser diodes. We also describe possible mechanisms by which the impurity-induced layer disordering proceeds based on Column III “Frenkel” defects and the influence of the crystal Fermi level on the defect solubility. These mechanisms are supported by experimental data.

Cavity Parameters of ZnCdSe/ZnSe Single-Quantum-Well Separate-Confinement-Heterostructure Laser Diodes

1993 ◽  
Vol 32 (Part 2, No. 12A) ◽  
pp. L1750-L1752 ◽  
Author(s):  
Ayumu Tsujimura ◽  
Shigeo Yoshii ◽  
Shigeo Hayashi ◽  
Kazuhiro Ohkawa ◽  
Tsuneo Mitsuyu
Keyword(s):  
Quantum Well ◽  
Laser Diodes ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Heterostructure Laser

Native‐oxide coupled‐cavity AlxGa1−xAs‐GaAs quantum well heterostructure laser diodes

1991 ◽  
Vol 59 (22) ◽  
pp. 2838-2840 ◽  
Author(s):  
N. El‐Zein ◽  
F. A. Kish ◽  
N. Holonyak ◽  
A. R. Sugg ◽  
M. J. Ries ◽  
...  
Keyword(s):  
Quantum Well ◽  
Laser Diodes ◽  
Native Oxide ◽  
Heterostructure Laser ◽  
Coupled Cavity
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