Effect of carrier charge imbalance on the threshold current in diode lasers with thin intrinsic quantum wells

1994 ◽  
Vol 65 (25) ◽  
pp. 3218-3220 ◽  
Author(s):  
G. A. Kosinovsky ◽  
M. Grupen ◽  
K. Hess
Keyword(s):  
Quantum Wells ◽  
Diode Lasers ◽  
Threshold Current ◽  
Charge Imbalance ◽  
Carrier Charge

Interband Semiconductor Lasers and LEDs

2020 ◽  
pp. 421-490
Author(s):  
Vurgaftman Igor
Keyword(s):  
Quantum Wells ◽  
Semiconductor Lasers ◽  
High Speed ◽  
Diode Lasers ◽  
Spectral Characteristics ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Light Emitting ◽  
Speed Modulation ◽  
Interband Cascade Lasers

This chapter discusses the operation of conventional diode lasers based on quantum wells and quantum dots as a function of emission wavelength. The recombination processes that control the threshold current density of the devices are described in detail, including recombination at defects, radiative, and Auger recombination. The high-speed modulation and spectral characteristics of semiconductor lasers are also discussed. It continues by illustrating why interband cascade lasers can outperform diode lasers at mid-infrared wavelengths and describing their design and operating characteristics in detail. On the short-wavelength side of the spectrum, the nitride lasers and the factors that limit their performance are discussed. In addition to lasers, the principles underlying light-emitting diodes (LEDs) are outlined, and the proposed mechanisms for improving the extraction of the light from high-index semiconductor materials are described. The chapter concludes with a discussion of the performance of semiconductor optical amplifiers designed to amplify a weak input signal.

High-Temperature W Diode Lasers Emitting at 3.3µm

1999 ◽  
Vol 607 ◽  
Author(s):  
L. J. Olafsen ◽  
W. W. Bewley ◽  
I. Vurgaftman ◽  
C. L. Felix ◽  
E. H. Aifer ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Room Temperature ◽  
Optical Pumping ◽  
Diode Lasers ◽  
Characteristic Temperature ◽  
Threshold Current ◽  
Type Ii ◽  
Operating Characteristics ◽  
Current Densities ◽  
Cladding Layers

AbstractW lasers based on type-II antimonides were recently operated nearly to room temperature under the conditions of cw optical pumping. However, the development of electrically pumped mid-infrared lasers has not yet reached the same level of performance. This is largely related to the more challenging task of simultaneously optimizing the doping/transport and gain/optical properties of the devices. Here we report a demonstration of type-II mid-IR diode lasers employing W active quantum wells. Laser structures with 5 or 10 active periods sandwiched between broadened-waveguide separate confinement regions and quaternary optical cladding layers were processed into 100-µm-wide stripes, cleaved into 1-mm-long cavities, and mounted junction side down. For 0.5-1 µs pulses at a repetition rate of 200 Hz, lasing was obtained up to a maximum operating temperature of 310 K, where the emission wavelength was 3.27 µm. The threshold current densities were 110 A/cm2and 25 kA/cm2 at 78 and 310 K, respectively. The characteristic temperature, To, was 48 K for temperatures between 100 and 280 K. Operation in cw mode was obtained to 195 K, with threshold current densities of 63 A/cm2and 1.4 kA/cm2at 78 and 195 K, respectively, with To = 38 K between 78 and 195 K. Significant further improvements in the operating characteristics are expected once the optimization of the designs and fabrication procedures is complete.

IV–VI QUANTUM WELLS FOR INFRARED LASERS

1995 ◽  
Vol 04 (02) ◽  
pp. 283-312 ◽  
Author(s):  
G. BAUER ◽  
M. KRIECHBAUM ◽  
Z. SHI ◽  
M. TACKE
Keyword(s):  
Quantum Wells ◽  
Diode Lasers ◽  
Threshold Current ◽  
Quantum Structures ◽  
Material System ◽  
Quantum Structure ◽  
Central Importance ◽  
Mid Infrared ◽  
Operation Temperature ◽  
Current Reduction

Of central importance for mid-infrared diode lasers are their actual cryogenic operation temperatures. Quantum structures offer the potential for threshold current reduction and hence an operation temperature increase. The present experimental state of quantum structure diode lasers is reviewed. The relevant laser properties of the most promising material system, the IV–VI's are treated theoretically, and experimental results for IV–VI quantum well and superlattices samples are discussed.

Theoretical Performance of MID-IR Broken-Gap Superlattice Quantum Well Lasers

1996 ◽  
Vol 450 ◽  
Author(s):  
Michael E. Flatté ◽  
C. H. Grein ◽  
J. T. Olesberg ◽  
T. F. Boggess
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Threshold Current ◽  
Quantum Well Lasers ◽  
Type Ii Superlattice ◽  
Superlattice Structure ◽  
Current Densities ◽  
Semi Empirical ◽  
Broken Gap ◽  
The Ideal

ABSTRACTWe will present calculations of the ideal performance of mid-infrared InAs/InGaSb superlattice quantum well lasers. For these systems several periods of an InAs/InGaSb type-II superlattice are grown in quantum wells. Calculations of the non-radiative and radiative lifetimes of the carriers utilize the full non-parabolic band structure and momentum-dependent matrix elements calculated from a semi-empirical multilayer K · P theory. From these lifetimes, threshold current densities have been evaluated for laser structures. We find serious problems with the hole and electron confinement in the superlattice quantum wells grown to date, and propose a four-layer superlattice structure which corrects these problems.

6.6.2 Growth of quantum wells in GaSb-based type-II diode lasers

2013 ◽  
pp. 156-157
Author(s):  
C. Höfling ◽  
C. Schneider ◽  
A. Forchel
Keyword(s):  
Quantum Wells ◽  
Diode Lasers ◽  
Type Ii

6.6.1 Growth of quantum wells in GaSb-based diode lasers

2013 ◽  
pp. 152-155
Author(s):  
C. Höfling ◽  
C. Schneider ◽  
A. Forchel
Keyword(s):  
Quantum Wells ◽  
Diode Lasers

Sb-Based Mid-Infrared Diode Lasers

2001 ◽  
Vol 692 ◽  
Author(s):  
C. Mermelstein ◽  
M. Rattunde ◽  
J. Schmitz ◽  
S. Simanowski ◽  
R. Kiefer ◽  
...  
Keyword(s):  
Current Density ◽  
Cavity Length ◽  
Diode Lasers ◽  
Characteristic Temperature ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Ridge Waveguide ◽  
Single Element ◽  
Type I ◽  
Waveguide Design

AbstractIn this paper we review recent progress achieved in our development of type-I GaInAsSb/AlGaAsSb quantum-well (QW) lasers with emission wavelength in the 1.74–2.34 μm range. Triple-QW (3-QW) and single-QW (SQW) diode lasers having broadened waveguide design emitting around 2.26 μm have been studied in particular. Comparing the two designs we have find that the threshold current density at infinite cavity length as well as the transparency current density scale with the number of QWs. Maximum cw operating temperature exceeding 50°C and 90°C has been obtained for ridge waveguide lasers emitting above and below 2 μm, respectively. Ridge waveguide diode lasers emitting at 1.94 μm exhibited internal quantum efficiencies in excess of 77%, internal losses of 6 cm−1, and threshold current density at infinite cavity length as low as 121 A/cm2 reflecting the superior quality of our diode lasers, all values recorded at 280 K. A high characteristic temperature TOof 179 K for the threshold current along with a value of T1 = 433 K for the characteristic temperature of the external efficiency have been attained for the 240–280 K temperature interval. Room temperature cw output powers exceeding 1.7 W have been demonstrated for broad area single element devices with highreflection/ antireflection coated mirror facets, mounted epi-side down. The latter result is a proof for the high power capabilities of these GaSb-based mid-ir diode lasers.

1.5 micron InAs quantum dot lasers based on metamorphic InGaAs/GaAs heterostructures.

2003 ◽  
Vol 794 ◽  
Author(s):  
V.M. Ustinov ◽  
A.E. Zhukov ◽  
A.R. Kovsh ◽  
N.A. Maleev ◽  
S.S. Mikhrin ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Active Region ◽  
Quantum Wells ◽  
Gaas Substrate ◽  
Room Temperature ◽  
Internal Quantum Efficiency ◽  
Characteristic Temperature ◽  
Optical Loss ◽  
Threshold Current ◽  
Temperature Threshold

ABSTRACT1.5 micron range emission has been realized using the InAs quantum dots embedded into the metamorphic InGaAs layer containing 20% of InAs grown by MBE on a GaAs substrate. Growth regimes were optimized to reduce significantly the density of dislocations propagating into the active layer from the lattice mismatched interface. 2 mm long InGaAs/InGaAlAs lasers with 10 planes of quantum dots in the active region showed threshold current density about 1.4 kA/cm2 with the external differential efficiency as high as 38%. Lasing wavelength depends on the optical loss being in the 1.44–1.49 micron range at room temperature. On increasing the temperature the wavelength reaches 1.515 micron at 85C while the threshold current characteristic temperature of 55–60K was estimated. High internal quantum efficiency (η>60%)and low internal losses (α=3–4 cm ) were realized. Maximum room temperature output power in pulsed regime as high as 5.5 W for 100 micron wide stripe was demonstrated. Using the same concept 1.3 micron InGaAs/InGaAlAs quantum well lasers were fabricated. The active region contained quantum wells with high (∼40%) indium content which was possible due to the intermediate InGaAs strain relaxation layer. 1 mm stripe lasers showed room temperature threshold current densities about 3.3 kA/cm (λ=1.29 micron) and 400 A/cm2 at 85K. Thus, the use of metamorphic InGaAs layers on GaAs substrate is a very promising approach for increasing the emission wavelength of GaAs based lasers.

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