Valence‐band discontinuity between GaN and AlN measured by x‐ray photoemission spectroscopy

1994 ◽  
Vol 65 (5) ◽  
pp. 610-612 ◽  
Author(s):  
G. Martin ◽  
S. Strite ◽  
A. Botchkarev ◽  
A. Agarwal ◽  
A. Rockett ◽  
...  
Keyword(s):  
Valence Band ◽  
Photoemission Spectroscopy ◽  
X Ray ◽  
Valence Band Discontinuity

Valence-band discontinuity between GaN and AIN measured by x-ray photoemission spectroscopy

1995 ◽  
Vol 24 (4) ◽  
pp. 225-227 ◽  
Author(s):  
G. Martin ◽  
S. Strite ◽  
A. Botchkarev ◽  
A. Agarwal ◽  
A. Rockett ◽  
...  
Keyword(s):  
Valence Band ◽  
Photoemission Spectroscopy ◽  
X Ray ◽  
Valence Band Discontinuity

The growth of ZnO on buffer layers and the valence band offset determined by X-ray photoemission spectroscopy

2010 ◽  
Vol 150 (41-42) ◽  
pp. 1991-1994 ◽  
Author(s):  
H.P. Song ◽  
G.L. Zheng ◽  
A.L. Yang ◽  
Y. Guo ◽  
H.Y. Wei ◽  
...  
Keyword(s):  
Valence Band ◽  
Buffer Layers ◽  
Photoemission Spectroscopy ◽  
Band Offset ◽  
Valence Band Offset ◽  
X Ray

Valence‐band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x‐ray photoemission spectroscopy

1996 ◽  
Vol 68 (18) ◽  
pp. 2541-2543 ◽  
Author(s):  
G. Martin ◽  
A. Botchkarev ◽  
A. Rockett ◽  
H. Morkoç
Keyword(s):  
Valence Band ◽  
Photoemission Spectroscopy ◽  
X Ray

Growth and Characterization of the Binary Defect Alloy Cu2-xSe and the Relation to II–VI/I–III–VI Heterojunction Formation

1995 ◽  
Vol 378 ◽  
Author(s):  
Art J. Nelson ◽  
K. Sinha ◽  
John Moreland
Keyword(s):  
Electronic Structure ◽  
Valence Band ◽  
Photoemission Spectroscopy ◽  
Interfacial Chemistry ◽  
Valence Band Offset ◽  
Force Microscopy ◽  
Atomic Force ◽  
Valence Band Discontinuity

AbstractSynchrotron radiation soft x-ray photoemission spectroscopy was used to investigate the development of the electronic structure at the CdS/Cu2Se heterojunction interface. Cu2−xSe layers were deposited on GaAs (100) by molecular beam epitaxy from Cu2Se sources. Raman spectra reveal a strong peak at 270 cm−1, indicative of the Cu2−xSe phase. Atomic force microscopy reveals uniaxial growth in a preferred (100) orientation. CdS overlayers were then deposited in-situ, at room temperature, in steps on these epilayers. Photoemission measurements were acquired after each growth in order to observe changes in the valence band electronic structure as well as changes in the Se3d and Cd4d core lines. The results were used to correlate the interfacial chemistry with the electronic structure and to directly determine the CdS/Cu2−xSe and heterojunction valence band discontinuity and the consequent heterojunction band diagram. These results are compared to the valence band offset (ΔEv) for the CdS/CuInSe2 heterojunction interface.

Valence-band electronic structure ofMoS2and Cs/MoS2(0002) studied by angle-resolved x-ray photoemission spectroscopy

1996 ◽  
Vol 54 (8) ◽  
pp. 5471-5479 ◽  
Author(s):  
Ken T. Park ◽  
Michelle Richards-Babb ◽  
James S. Hess ◽  
Jeff Weiss ◽  
Kamil Klier
Keyword(s):  
Electronic Structure ◽  
Valence Band ◽  
Photoemission Spectroscopy ◽  
X Ray

HETEROJUNCTION BAND DISCONTINUITY CHANGE BY ULTRATHIN INTRALAYER: Na

1993 ◽  
Vol 07 (07) ◽  
pp. 459-464 ◽  
Author(s):  
SHIHONG XU ◽  
XIANMING LIU ◽  
MAOSHENG MA ◽  
JINGSHENG ZHU ◽  
YUHENG ZHANG ◽  
...  
Keyword(s):  
Valence Band ◽  
Photoemission Spectroscopy ◽  
Band Offset ◽  
Valence Band Discontinuity

The changes of band offset of Ge-GaAs(100) heterojunction are observed by means of an ultrathin Na intralayer with the photoemission spectroscopy. 1 ML Na intralayer increases the valence-band discontinuity of Ge-GaAs by 0.19 eV on the average.

X‐ray photoemission core level determination of the GaSb/AlSb heterojunction valence‐band discontinuity

1986 ◽  
Vol 49 (16) ◽  
pp. 1037-1039 ◽  
Author(s):  
G. J. Gualtieri ◽  
G. P. Schwartz ◽  
R. G. Nuzzo ◽  
W. A. Sunder
Keyword(s):  
Valence Band ◽  
Core Level ◽  
X Ray ◽  
Valence Band Discontinuity
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