Synthesis of dislocation free Siy(SnxC1−x)1−yalloys by molecular beam deposition and solid phase epitaxy

1994 ◽  
Vol 65 (9) ◽  
pp. 1159-1161 ◽  
Author(s):  
Gang He ◽  
Mark D. Savellano ◽  
Harry A. Atwater
Keyword(s):  
Molecular Beam ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Molecular Beam Deposition ◽  
Beam Deposition

Synthesis of Dislocation Free Siy(SnxC1−x)1−y Alloys by Molecular Beam Deposition and Solid Phase Epitaxy

1993 ◽  
Vol 298 ◽  
Author(s):  
Gang He ◽  
Mark D. Savellano ◽  
Harry A. Atwater
Keyword(s):  
Molecular Beam ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
X Ray Diffraction ◽  
Time Resolved ◽  
Pure Silicon ◽  
Ion Channeling ◽  
Transmission Electron ◽  
Molecular Beam Deposition ◽  
Beam Deposition

AbstractSynthesis of strain-compensated single-crystal Siy(SnxC1-x)1-y alloy films on silicon (100) substrates has been achieved with compositions of tin and carbon greatly exceeding their normal equilibrium solubility in silicon. Amorphous SiSnC alloys were deposited by molecular beam deposition from solid sources followed by thermal annealing. In situ monitoring of crystallization was done using time-resolved reflectivity. Good solid phase epitaxy was observed for Si0.98Sn0.01C0.01, at a rate about 20 times slower than that of pure silicon. Compositional and structural analysis was done using Rutherford backscattering, electron microprobe, ion channeling, x-ray diffraction, and transmission electron microscopy.

Interfacial Superstructures Studied by Grazing Incidence X-Ray Diffraction

1989 ◽  
Vol 159 ◽  
Author(s):  
Koichi Akimoto ◽  
Jun'Ichiro Mizuki ◽  
Ichiro Hirosawa ◽  
Junji Matsui
Keyword(s):  
Synchrotron Radiation ◽  
Direct Observation ◽  
Molecular Beam ◽  
Solid Phase ◽  
Grazing Incidence ◽  
Deposition Method ◽  
X Ray Diffraction ◽  
X Ray ◽  
Molecular Beam Deposition ◽  
Beam Deposition

ABSTRACTSurface superstructures (reconstructed structures) have been observed by many authors. However, it is not easy to confirm that a superstructure does exist at an interface between two solid layers. The present paper reports a direct observation, by a grazing incidence x-ray diffraction technique with use of synchrotron radiation, of superstructures at the interface. Firstly, the boron-induced R30° reconstruction at the Si interface has been investigated. At the a Si/Si(111) interface, boron atoms at 1/3 ML are substituted for silicon atoms, thus forming a R30° lattice. Even at the interface between a solid phase epitaxial Si(111) layer and a Si(111) substrate, the boron-induced R30° reconstruction has been also observed. Secondly, SiO2/Si(100)-2×l interfacial superstructures have been investigated. Interfacial superstructures have been only observed in the samples of which SiO2 layers have been deposited with a molecular beam deposition method. Finally, the interfaces of MOCVD-grown AIN/GaAs(100) have been shown to have 1×4 and 1×6 superstructures.

Laser Solid-Phase-Epitaxy of Amorphous Si1−xGex layer on Si

1992 ◽  
Vol 279 ◽  
Author(s):  
Yasunori Sogoh ◽  
Kouicbi Murakami ◽  
Kohzoh Nasuda
Keyword(s):  
Solid Phase ◽  
Central Area ◽  
Solid Phase Epitaxy ◽  
Small Areas ◽  
Molecular Beam Deposition ◽  
Amorphous Si ◽  
Short Time ◽  
Power Densities ◽  
Beam Deposition ◽  
Strained Sige

ABSTRACTLaser Solid-phase-epitaxy (SPE) of amorphous Si1−xGex layer on Si formed by the molecular beam deposition (MBD) method was successfully performed by cw-Kr laser irradiation. Laser SPE of small areas was achieved by Laser irradiations of short time durations and high power densities The strain in the Laser-SPE layers was evaluated by micro-Raman scattering. It is demonstrated that strained SiGe layers on Si can be grown in the central area of 10μm size within the area crystallized by Laser- SPE at a substrate temperature of 400°C after preannealing at 350°C for 15 to 30 minutes.

Molecular beam deposition of high quality silicon oxide dielectric films

1995 ◽  
Vol 148 (4) ◽  
pp. 336-344 ◽  
Author(s):  
Naresh Chand ◽  
J.E. Johnson ◽  
J.W. Osenbach ◽  
W.C. Liang ◽  
L.C. Feldman ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Silicon Oxide ◽  
Dielectric Films ◽  
High Quality ◽  
Molecular Beam Deposition ◽  
Beam Deposition

Ozone-enhanced molecular beam deposition of nickel oxide (NiO) for sensor applications

1997 ◽  
Vol 310 (1-2) ◽  
pp. 19-23 ◽  
Author(s):  
Alexandra Neubecker ◽  
Thomas Pompl ◽  
Theodor Doll ◽  
Walter Hansch ◽  
Ignaz Eisele
Keyword(s):  
Nickel Oxide ◽  
Molecular Beam ◽  
Sensor Applications ◽  
Molecular Beam Deposition ◽  
Beam Deposition

Heteroepitaxial properties of Si1−x−yGexCy on Si(100) grown by combined ion- and molecular-beam deposition

1997 ◽  
Vol 81 (7) ◽  
pp. 3081-3091 ◽  
Author(s):  
Harald Jacobsson ◽  
Joan Xiang ◽  
Nicole Herbots ◽  
Shawn Whaley ◽  
Peihua Ye ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Molecular Beam Deposition ◽  
Beam Deposition
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