Photoluminescence study of (111)‐oriented GaAs/GaAsP strained‐layer quantum well structure

1994 ◽  
Vol 64 (12) ◽  
pp. 1555-1557 ◽  
Author(s):  
Xiong Zhang ◽  
Koichi Karaki ◽  
Hiroyuki Yaguchi ◽  
Kentaro Onabe ◽  
Ryoichi Ito ◽  
...  
1994 ◽  
Vol 358 ◽  
Author(s):  
Tiesheng Li ◽  
H. J. Lozykowski

ABSTRACTExperimental and theoretical investigations of electronic states in a strained-layer CdTe/CdZnTe coupled double quantum well structure are presented. The optical properties of this lattice mismatched heterostructure were characterized by photoluminescence (PL), PL excitation and polarization spectroscopies. The influence of electrical field on exciton states in the strained layer CdTe/CdZnTe coupled double quantum well structure is experimentally studied. The confined electronic states were calculated in the framework of the envelope function approach, taking into account the strain effect induced by the lattice-mismatch. Experimental results are compared with the calculated transition energies.


1989 ◽  
Vol 55 (7) ◽  
pp. 666-668 ◽  
Author(s):  
S. Y. Lin ◽  
C. T. Liu ◽  
D. C. Tsui ◽  
E. D. Jones ◽  
L. R. Dawson

1996 ◽  
Vol 25 (5) ◽  
pp. 701-708 ◽  
Author(s):  
Nobuyuki Otsuka ◽  
Masahiro Kito ◽  
Yasufumi Yabuuchi ◽  
Masato Ishino ◽  
Yasushi Matsui

1986 ◽  
Vol 49 (3) ◽  
pp. 135-136 ◽  
Author(s):  
T. E. Van Eck ◽  
P. Chu ◽  
W. S. C. Chang ◽  
H. H. Wieder

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