Temperature dependence of the electron energy gap of highTCsuperconductors studied by work function spectroscopy

1994 ◽  
Vol 64 (13) ◽  
pp. 1726-1728
Author(s):  
S. Westermeyr ◽  
R. Müller ◽  
J. Scholtes ◽  
H. Oechsner
Keyword(s):  
Temperature Dependence ◽  
Work Function ◽  
Electron Energy ◽  
Energy Gap

Temperature Dependence of Optical Energy Gap of Gallium Selenide

2001 ◽  
Vol 8 (3-4) ◽  
pp. 251-259 ◽  
Author(s):  
M. Kepinska ◽  
M. Nowak ◽  
Z. Kovalyuk ◽  
R. Murri
Keyword(s):  
Temperature Dependence ◽  
Energy Gap ◽  
Gallium Selenide ◽  
Optical Energy Gap ◽  
Optical Energy

Determination of Density of Localized States in Amorphous Silicon Alloys From the Low Field Conductance of Thin N-I-N Diodes

1985 ◽  
Vol 49 ◽  
Author(s):  
Michael Shur ◽  
Michael Hack
Keyword(s):  
Temperature Dependence ◽  
Amorphous Silicon ◽  
Bulk Density ◽  
Density Of States ◽  
Energy Gap ◽  
Localized States ◽  
New Technique ◽  
Silicon Alloys ◽  
Low Field ◽  
Density Of Localized States

AbstractWe describe a new technique to determine the bulk density of localized states in the energy gap of amorphous silicon alloys from the temperature dependence of the low field conductance of n-i-n diodes. This new technique allows us to determine the bulk density of states in the centre of a device, and is very straightforward, involving fewer assumptions than other established techniques. Varying the intrinsic layer thickness allows us to measure the,density of states within approximately 400 meV of midgap.We measured the temperature dependence of the low field conductance of an amorphous silicon alloy n-i-n diode with an intrinsic layer thjckness of 0.45 microns and deduced the density of localised states to be 3xlO16cm−3 eV−1 at approximately 0.5 eV below the bottom of the conduction band. We have also considered the high bias region (the space charge limited current regime) and proposed an interpolation formula which describes the current-voltage characteristics of these structures at all biases and agrees well with our computer simulation based on the solution of the complete system of transport equations.

The temperature dependence of the spin - Peierls energy gap in

1996 ◽  
Vol 8 (4) ◽  
pp. L59-L64 ◽  
Author(s):  
J-G Lussier ◽  
S M Coad ◽  
D F McMorrow ◽  
D McK Paul
Keyword(s):  
Temperature Dependence ◽  
Energy Gap

Impact of damaging and recovery on the temperature dependence of the work function of oxide electrodes in fluorescent lamps

2021 ◽  
Vol 96 (1) ◽  
pp. 11301
Author(s):  
Reinhard Langer ◽  
Irina Paul ◽  
Reinhard Tidecks
Keyword(s):  
Ultraviolet Radiation ◽  
Temperature Dependence ◽  
Work Function ◽  
Surface States ◽  
Strong Increase ◽  
Thermal Excitation ◽  
Cold Starting ◽  
Fluorescent Lamps ◽  
Oxide Electrodes ◽  
Before And After

In the present work the work function of electrons for oxide cathodes in operating fluorescent lamps is measured before and after damaging the cathodes by cold starting of the lamp. A strong increase of the absolute value and a decrease of the temperature dependence of the work function is observed. The values recover partly after operating the lamp for a certain time. The results are interpreted as the consequence of a thin metallic layer generated during cold starting at the surface of the oxide and its effect on the depletion of electrons of donor-like colour centres (appearing in the oxide due to oxygen vacancies) under the ultraviolet radiation present in an operating fluorescent lamp, and on the magnitude and temperature dependence of the work function in the plated regions, invoking the patch effect to generate an averaged value of the work function, which is then assumed to be observed experimentally. Moreover, barium surface states are considered, yielding reasonable values for the not plated regions, when calculating the work function, as well for the assumption of a depletion of also these states by ultraviolet radiation, as also when only regarding a thermal excitation of the surface states applying the Fowler equation. Finally, a model of a diffusion governed dynamical equilibrium yielding a T3∕2 dependence for the donor concentration is proposed.

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