Photoluminescence determination of the Fermi energy in heavily doped strained Si1−xGexlayers

1994 ◽  
Vol 64 (15) ◽  
pp. 1953-1955 ◽  
Author(s):  
M. Líbezný ◽  
S. C. Jain ◽  
J. Poortmans ◽  
M. Caymax ◽  
J. Nijs ◽  
...  
Keyword(s):  
Fermi Energy ◽  
Heavily Doped

Spin Susceptibility of Intercalated Graphite and Doped Polyacetylene

1980 ◽  
Vol 3 ◽  
Author(s):  
James W. Kaufer ◽  
Seiichiro Ikehata
Keyword(s):  
Density Of States ◽  
Fermi Energy ◽  
Low Frequency ◽  
Spin Susceptibility ◽  
Separate Determination ◽  
Intercalated Graphite ◽  
Heavily Doped

ABSTRACTWe have examined the electronic susceptibility of intercalated graphite and doped (CH)x using ESR [1]. The dopant in both cases was AsF5. For metallic intercalated graphite and for heavily doped (CH)x, the low frequency Schumacher-Slichter technique was used to determine the density of states at the Fermi energy. In the case of doped (CH)x, susceptibility measurements as a function of temperature allowed separate determination of the Curie and Pauli contributions.

Unscientific Determination of Fermi Energy of Copper by Heating and/or Cooling a Copper Wire

Resonance ◽  
2019 ◽  
Vol 24 (12) ◽  
pp. 1439-1443
Author(s):  
Chetan Kotabage ◽  
A. C. Abhyankar
Keyword(s):  
Fermi Energy ◽  
Copper Wire

Magnetic Spin Susceptibility of AsF5-Intercalated Graphite: Determination of the Density of States at the Fermi Energy

1978 ◽  
Vol 41 (20) ◽  
pp. 1417-1421 ◽  
Author(s):  
B. R. Weinberger ◽  
J. Kaufer ◽  
A. J. Heeger ◽  
J. E. Fischer ◽  
M. Moran ◽  
...  
Keyword(s):  
Density Of States ◽  
Fermi Energy ◽  
Spin Susceptibility ◽  
Intercalated Graphite ◽  
Magnetic Spin

Heavily doped GaAs:Se. I. Photoluminescence determination of the electron effective mass

1990 ◽  
Vol 68 (5) ◽  
pp. 2367-2375 ◽  
Author(s):  
D. M. Szmyd ◽  
P. Porro ◽  
A. Majerfeld ◽  
S. Lagomarsino
Keyword(s):  
Effective Mass ◽  
Electron Effective Mass ◽  
Heavily Doped

The Magneto Electron Statistics in Heavily Doped N Type-Intrinsic-P Type-Intrinsic Structures

2021 ◽  
Vol 21 (12) ◽  
pp. 6183-6187
Author(s):  
P. K. Das ◽  
J. Pal ◽  
M. Debbarma ◽  
K. P. Ghatak
Keyword(s):  
Magnetic Field ◽  
Band Structure ◽  
Electron Concentration ◽  
Fermi Energy ◽  
Energy Band ◽  
Electronic Materials ◽  
Numerical Magnitudes ◽  
Heavily Doped ◽  
Quantizing Magnetic Field ◽  
P Type

In this paper we study the Electron Statistics in Heavily Doped N Type-Intrinsic-P Type-Intrinsic structures of non-linear optical, tetragonal and opto-electronic materials in the presence of magnetic quantization. It is found taking such heavily doped structures of Cd3As2, CdGeAs2, InAs, InSb, Hg1−xCdxTe, In1−xGaxAsyP1−y as examples that the Fermi energy (EF) oscillates with inverse quantizing magnetic field (1/B) and increases with increasing electron concentration with different numerical magnitudes which is the signature of respective band structure. The numerical value of the Fermi energy is different in different cases due to the different values of the energy band constants.

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