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AlGaAs/InGaAs/GaAs single electron transistors fabricated by Ga focused ion beam implantation
Applied Physics Letters
◽
10.1063/1.111634
◽
1994
◽
Vol 64
(17)
◽
pp. 2250-2252
◽
Cited By ~ 12
Author(s):
Toshimasa Fujisawa
◽
Yoshiro Hirayama
◽
Seigo Tarucha
Keyword(s):
Focused Ion Beam
◽
Ion Beam
◽
Single Electron
◽
Single Electron Transistors
◽
Ion Beam Implantation
◽
Electron Transistors
Download Full-text
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References
AlGaAs/InGaAs/GaAs Single Electron Transistors Fabricated by Ga Focused Ion Beam Implantation
10.7567/ssdm.1993.lc-13
◽
1993
◽
Author(s):
Toshimasa Fujisawa
◽
Yoshiro Hirayama
◽
Seigo Tarucha
Keyword(s):
Focused Ion Beam
◽
Ion Beam
◽
Single Electron
◽
Single Electron Transistors
◽
Ion Beam Implantation
◽
Electron Transistors
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Fabrication and characterization of room temperature operating single electron transistors using focused ion beam technologies
10.37099/mtu.dc.etds/65
◽
2008
◽
Author(s):
Prasanjit Santosh Karre
Keyword(s):
Room Temperature
◽
Focused Ion Beam
◽
Ion Beam
◽
Single Electron
◽
Single Electron Transistors
◽
Temperature Operating
◽
Fabrication And Characterization
◽
Electron Transistors
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Fabrication Technique for Carbon Nanotube Single-Electron Transistors Using Focused Ion Beam
Japanese Journal of Applied Physics
◽
10.1143/jjap.43.5669
◽
2004
◽
Vol 43
(8A)
◽
pp. 5669-5670
◽
Cited By ~ 8
Author(s):
Yuto Kurokawa
◽
Yutaka Ohno
◽
Shigeru Kishimoto
◽
Toshiya Okazaki
◽
Hisanori Shinohara
◽
...
Keyword(s):
Carbon Nanotube
◽
Focused Ion Beam
◽
Ion Beam
◽
Single Electron
◽
Fabrication Technique
◽
Single Electron Transistors
◽
Electron Transistors
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Single-electron transistors operating at room temperature, fabricated utilizing nanocrystals created by focused-ion beam
Applied Physics Letters
◽
10.1063/1.1458685
◽
2002
◽
Vol 80
(12)
◽
pp. 2168-2170
◽
Cited By ~ 63
Author(s):
T. W. Kim
◽
D. C. Choo
◽
J. H. Shim
◽
S. O. Kang
Keyword(s):
Room Temperature
◽
Focused Ion Beam
◽
Ion Beam
◽
Single Electron
◽
Single Electron Transistors
◽
Electron Transistors
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Development of Energy-Efficient Single-Electron Transistors with Oxide Nanoelectronics
10.21236/ada580770
◽
2011
◽
Author(s):
Jeremy Levy
Keyword(s):
Energy Efficient
◽
Single Electron
◽
Single Electron Transistors
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Simultaneous arrayed formation of single-electron transistors using electromigration in series-connected nanogaps
AIP Advances
◽
10.1063/1.5043449
◽
2018
◽
Vol 8
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◽
pp. 105005
Author(s):
Mitsuki Ito
◽
Mamiko Yagi
◽
Moe Shimada
◽
Jun-ichi Shirakashi
Keyword(s):
Single Electron
◽
Single Electron Transistors
◽
In Series
◽
Electron Transistors
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Coupled single-electron transistors as a differential voltage amplifier
New Journal of Physics
◽
10.1088/1367-2630/8/12/300
◽
2006
◽
Vol 8
(12)
◽
pp. 300-300
◽
Cited By ~ 3
Author(s):
C S Wu
◽
C F Lin
◽
Watson Kuo
◽
C D Chen
Keyword(s):
Single Electron
◽
Single Electron Transistors
◽
Differential Voltage
◽
Voltage Amplifier
◽
Electron Transistors
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Single-Electron Transistors with Sidewall Depletion Gates on a Silicon-On-Insulator Nano-Wire
Japanese Journal of Applied Physics
◽
10.1143/jjap.41.2574
◽
2002
◽
Vol 41
(Part 1, No. 4B)
◽
pp. 2574-2577
◽
Cited By ~ 3
Author(s):
Kyung Rok Kim
◽
Dae Hwan Kim
◽
Suk-Kang Sung
◽
Jong Duk Lee
◽
Byung-Gook Park
◽
...
Keyword(s):
Silicon On Insulator
◽
Single Electron
◽
Single Electron Transistors
◽
Electron Transistors
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In situ electrical characterization of palladium-based single electron transistors made by electromigration technique
AIP Advances
◽
10.1063/1.4902170
◽
2014
◽
Vol 4
(11)
◽
pp. 117126
◽
Cited By ~ 6
Author(s):
L. Arzubiaga
◽
F. Golmar
◽
R. Llopis
◽
F. Casanova
◽
L. E. Hueso
Keyword(s):
Electrical Characterization
◽
Single Electron
◽
Single Electron Transistors
◽
Electron Transistors
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Measurements of Kondo and Spin Splitting in Single-Electron Transistors
Physical Review Letters
◽
10.1103/physrevlett.93.166602
◽
2004
◽
Vol 93
(16)
◽
Cited By ~ 115
Author(s):
A. Kogan
◽
S. Amasha
◽
D. Goldhaber-Gordon
◽
G. Granger
◽
M. A. Kastner
◽
...
Keyword(s):
Single Electron
◽
Spin Splitting
◽
Single Electron Transistors
◽
Electron Transistors
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