Heteroepitaxial growth of InN on AlN‐nucleated (00.1) sapphire by ultrahigh vacuum electron cyclotron resonance‐assisted reactive magnetron sputtering

1994 ◽  
Vol 64 (21) ◽  
pp. 2864-2866 ◽  
Author(s):  
Wayne A. Bryden ◽  
Scott A. Ecelberger ◽  
Thomas J. Kistenmacher
Keyword(s):  
Magnetron Sputtering ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Ultrahigh Vacuum ◽  
Electron Cyclotron ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Heteroepitaxial Growth

ECR-Assisted Reactive Magnetron Sputtering of InN

1994 ◽  
Vol 339 ◽  
Author(s):  
W. A. Bryden ◽  
S. A. Ecelberger ◽  
M. E. Hawley ◽  
T. J. Kistenmacher
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Electrical Transport ◽  
Electron Cyclotron Resonance ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Heteroepitaxial Growth ◽  
Structural Morphology ◽  
Apparent Reduction ◽  
Homogeneous Strain

ABSTRACTThe growth of high-quality thin films of the Group IIIA nitrides is exceedingly difficult given their propensity for nonstoichiometry and the lack of suitable substrates for either homoepitaxial or heteroepitaxial growth. A novel deposition technique, ultrahigh vacuum electron cyclotron resonance-assisted reactive magnetron sputtering, has been developed for the preparation of Group IIIA nitride thin films. Thus far, thin films of the semiconductor InN have been deposited on AlN-seeded (00.1) sapphire substrates, and the properties (structural, morphology, and electrical transport) of these films studied as a function of growth temperature. Comparison to InN thin films grown by conventional reactive magnetron sputtering shows enhanced Hall mobilities (from about 50 to over 100 cm2/V-sec), a decreased carrier concentration (by about a factor of 2–3), an increased optical bandgap, and an apparent reduction in homogeneous strain that is in part to be due to film relaxation induced by the ECR beam and in part to enhanced nitrogen content and more nearly stoichiometric films.

Low Temperature SiGe Heteroepitaxy by Ultrahigh Vacuum Electron Cyclotron Resonance Chemical Vapor Deposition

1995 ◽  
Vol 379 ◽  
Author(s):  
Sung-Jae Joo ◽  
Ki-Hyun Hwang ◽  
Seok-Hee Hwang ◽  
Euijoon Yoon ◽  
Ki-Woong Whang
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Process Parameters ◽  
Vapor Deposition ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Ultrahigh Vacuum ◽  
Chemical Vapor ◽  
Electron Cyclotron ◽  
Epitaxial Layers

ABSTRACTDislocation-free Si1−xGex epilayers are successfully grown on (100) silicon at 440°C by ultrahigh vacuum electron cyclotron resonance chemical vapor deposition (UHV-ECRCVD). The effects of process parameters on the crystallinity of Si1−xGex epitaxial layers were studied. As the GeH4 flow rate increases and consequently Ge fraction increases above 20%, Si1−xGex epilayers become damaged heavily by ions. When Ge fraction is larger than 20%, process parameters like total pressure need to be adjusted to reduce the ion flux for high quality Sil−xGex. Growth rate of Si1−xGex epitaxial layers increases at 440°C with Ge content in the film. It is presumed that the hydrogen desorption from the surface is the rate-limiting step, however, the enhancement in growth rate is comparatively suppressed and delayed.

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