Buried‐oxide ridge‐waveguide InAlAs‐InP‐InGaAsP (λ∼1.3 μm) quantum well heterostructure laser diodes

1994 ◽  
Vol 64 (21) ◽  
pp. 2821-2823 ◽  
Author(s):  
M. R. Krames ◽  
N. Holonyak ◽  
J. E. Epler ◽  
H. P. Schweizer
Keyword(s):  
Quantum Well ◽  
Laser Diodes ◽  
Ridge Waveguide ◽  
Buried Oxide ◽  
Heterostructure Laser

Cavity Parameters of ZnCdSe/ZnSe Single-Quantum-Well Separate-Confinement-Heterostructure Laser Diodes

1993 ◽  
Vol 32 (Part 2, No. 12A) ◽  
pp. L1750-L1752 ◽  
Author(s):  
Ayumu Tsujimura ◽  
Shigeo Yoshii ◽  
Shigeo Hayashi ◽  
Kazuhiro Ohkawa ◽  
Tsuneo Mitsuyu
Keyword(s):  
Quantum Well ◽  
Laser Diodes ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Heterostructure Laser

Native‐oxide coupled‐cavity AlxGa1−xAs‐GaAs quantum well heterostructure laser diodes

1991 ◽  
Vol 59 (22) ◽  
pp. 2838-2840 ◽  
Author(s):  
N. El‐Zein ◽  
F. A. Kish ◽  
N. Holonyak ◽  
A. R. Sugg ◽  
M. J. Ries ◽  
...  
Keyword(s):  
Quantum Well ◽  
Laser Diodes ◽  
Native Oxide ◽  
Heterostructure Laser ◽  
Coupled Cavity

Thin upper‐confining layer AlxGa1−xAs‐GaAs quantum well heterostructure laser diodes

1993 ◽  
Vol 62 (9) ◽  
pp. 1006-1008 ◽  
Author(s):  
S. J. Caracci ◽  
F. A. Kish ◽  
M. R. Krames ◽  
M. J. Ries ◽  
N. Holonyak ◽  
...  
Keyword(s):  
Quantum Well ◽  
Laser Diodes ◽  
Heterostructure Laser

Long wavelength (λ∼1.5 μm) native‐oxide‐defined InAlAs‐InP‐InGaAsP quantum well heterostructure laser diodes

1994 ◽  
Vol 75 (5) ◽  
pp. 2706-2708 ◽  
Author(s):  
S. J. Caracci ◽  
M. R. Krames ◽  
N. Holonyak ◽  
M. J. Ludowise ◽  
A. Fischer‐Colbrie
Keyword(s):  
Quantum Well ◽  
Laser Diodes ◽  
Native Oxide ◽  
Long Wavelength ◽  
Heterostructure Laser

Characterization of GaS-Passivated Quantum-Well Laser Diodes

1999 ◽  
Vol 573 ◽  
Author(s):  
L. G. Vaughn ◽  
T. C. Newell ◽  
L. F. Lester ◽  
A. N. Macinnes
Keyword(s):  
Quantum Well ◽  
Radiative Recombination ◽  
Laser Diodes ◽  
Surface States ◽  
Ridge Waveguide ◽  
Pulsed Power ◽  
Quantum Well Laser ◽  
Heating Effects ◽  
The Impact

ABSTRACTThe degradation of AlGaAs/GaAs diode laser performance during operation is typically due to catastrophic optical damage of the facets caused when thermal runaway occurs. These heating effects are due to the presence of non-radiative recombination sites at and near the facets. MOCVD GaS is deposited on the facets of 825-nm ridge waveguide AlGaAs/GaAs quantumwell laser diodes as an electronic passivation to reduce the number of surface states available for non-radiative recombination. For passivated devices, a peak pulsed power nearly double that of unpassivated devices was achieved. The passivated devices also exhibit a longer lifetime before degradation. The impact of the passivation process on other optical characteristics of the laser diodes will also be discussed.

High-Performance Strain-Compensated Multiple Quantum Well Planar Buried Heterostructure Laser Diodes with Low Leakage Current

1996 ◽  
Vol 35 (Part 1, No. 3) ◽  
pp. 1751-1757 ◽  
Author(s):  
Ho Sung Cho ◽  
Dong Hoon Jang ◽  
Jung Kee Lee ◽  
Kyung Hyun Park ◽  
Jeong Soo Kim ◽  
...  
Keyword(s):  
Quantum Well ◽  
Leakage Current ◽  
High Performance ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Multiple Quantum ◽  
Low Leakage ◽  
Heterostructure Laser ◽  
Low Leakage Current ◽  
Buried Heterostructure

Characterization of an InGaAs-GaAs-AlGaAs strained-layer distributed-feedback ridge-waveguide quantum-well heterostructure laser

1992 ◽  
Vol 4 (4) ◽  
pp. 296-299 ◽  
Author(s):  
L.M. Miller ◽  
K.J. Beernink ◽  
J.T. Verdeyen ◽  
J.J. Coleman ◽  
J.S. Hughes ◽  
...  
Keyword(s):  
Quantum Well ◽  
Ridge Waveguide ◽  
Distributed Feedback ◽  
Strained Layer ◽  
Heterostructure Laser
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