Electron spin resonance study of the dangling bond in amorphous Si and porous Si

1993 ◽  
Vol 63 (12) ◽  
pp. 1657-1659 ◽  
Author(s):  
T. J. McMahon ◽  
Y. Xiao
Keyword(s):  
Electron Spin Resonance ◽  
Electron Spin ◽  
Electron Spin Resonance Study ◽  
Dangling Bond ◽  
Porous Si ◽  
Spin Resonance ◽  
Amorphous Si ◽  
Spin Resonance Study

Electron Spin Resonance Study of the Dangling Bond in a-Si:H and Porous Silicon

1993 ◽  
Vol 297 ◽  
Author(s):  
T.J. Mc Mahon ◽  
Y. Xiao
Keyword(s):  
Electron Spin Resonance ◽  
Porous Silicon ◽  
Electron Spin ◽  
Electrochemical Etching ◽  
Bond Line ◽  
Electron Spin Resonance Study ◽  
Dangling Bond ◽  
Porous Si ◽  
Spin Resonance ◽  
G Value

We compare the electron spin resonance (ESR) signal of the dangling bond in porous silicon films, produced by electrochemical etching, to the ESR signal from hydrogenated amorphous Si (a-Si:H). The anisotropy of the ESR signal in porous Si showed g values varying as for the Pb Si/SiO2 interface dangling bond. The g value varies from g|| − 2.0020 to gL − 2.0080 with an inhomogeneously broadened line width increasing from 1.8 to 3.8 G. A porous Si ESR powder line, with superhyperfine and strain broadening intrinsic to porous Si, is compared to the a−Si:H dangling bond line. The result is more inhomogeneous broadening of line widths parallel and perpendicular to the dangling bond axis in a-Si:H, and less anisotropy in g|| − gL- No evidence was seen for light-induced metastability on a H-passivated porous Si film.

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