Low pressure photodeposition of silicon nitride films using a xenon excimer lamp

1993 ◽  
Vol 63 (13) ◽  
pp. 1757-1759 ◽  
Author(s):  
P. Bergonzo ◽  
Ian W. Boyd
Keyword(s):  
Silicon Nitride ◽  
Low Pressure ◽  
Excimer Lamp ◽  
Silicon Nitride Films

Diffusion of hydrogen in low‐pressure chemical vapor deposited silicon nitride films

1990 ◽  
Vol 56 (25) ◽  
pp. 2530-2532 ◽  
Author(s):  
W. M. Arnold Bik ◽  
R. N. H. Linssen ◽  
F. H. P. M. Habraken ◽  
W. F. van der Weg ◽  
A. E. T. Kuiper
Keyword(s):  
Silicon Nitride ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Silicon Nitride Films ◽  
Chemical Vapor Deposited ◽  
Pressure Chemical ◽  
Diffusion Of Hydrogen

Positron annihilation study of low pressure chemical vapor deposited silicon nitride films

1991 ◽  
Vol 59 (14) ◽  
pp. 1687-1689 ◽  
Author(s):  
R. A. Hakvoort ◽  
H. Schut ◽  
A. van Veen ◽  
W. M. Arnold Bik ◽  
F. H. P. M. Habraken
Keyword(s):  
Silicon Nitride ◽  
Positron Annihilation ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Silicon Nitride Films ◽  
Chemical Vapor Deposited ◽  
Pressure Chemical ◽  
Positron Annihilation Study

Low pressure chemical vapor deposition of silicon nitride using the environmentally friendly tris(dimethylamino)silane precursor

1996 ◽  
Vol 11 (6) ◽  
pp. 1483-1488 ◽  
Author(s):  
R. A. Levy ◽  
X. Lin ◽  
J. M. Grow ◽  
H. J. Boeglin ◽  
R. Shalvoy
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Environmentally Benign ◽  
Silicon Nitride Films ◽  
Pressure Chemical ◽  
Phase Nucleation ◽  
Silane Precursor

This study investigates the use of the environmentally benign precursor tri(dimethylamino)silane (TDMAS) with NH3 to synthesize silicon nitride films by low pressure chemical vapor deposition. The growth kinetics are investigated as a function of deposition temperature, total pressure, and NH3/TDMAS flow ratios. The deposits are found to be essentially stoichiometric and to contain ∼5 at. % carbon when appropriate NH3 concentrations are present. The films are found in all cases to be amorphous and highly tensile. For optimized processing conditions, values of the refractive index are close to those reported for Si3N4. The film density is observed to increase with higher deposition temperatures up to 800 °C and then decrease due to the onset of gas phase nucleation effects. This behavior is readily reflected in the etch rate of those films. FTIR spectra reveal the presence of hydrogen even at high deposition temperatures (900 °C). Hardness and Young's modulus of the films are seen to increase with higher deposition temperatures, reaching saturation values near 20 and 185 GPa, respectively, above 800 °C.

Diffusion of hydrogen in low pressure chemical vapour deposited silicon nitride films

Vacuum ◽  
1990 ◽  
Vol 41 (4-6) ◽  
pp. 1055-1056 ◽  
Author(s):  
W.M. Arnold Bik ◽  
R.N.H. Linssen ◽  
F.H.P.M. Habraken ◽  
W.F. van der Weg ◽  
A.E.T. Kuiper
Keyword(s):  
Silicon Nitride ◽  
Chemical Vapour ◽  
Low Pressure ◽  
Silicon Nitride Films ◽  
Pressure Chemical ◽  
Diffusion Of Hydrogen

LIGHT-EMITTING N-RICH SILICON NITRIDE FILMS DEPOSITED BY PLASMA-ENHANCED AND LOW-PRESSURE CVD

2014 ◽  
Vol 18 (4) ◽  
pp. 263-267
Author(s):  
Irina N. Parkhomenko ◽  
F. F. Komarov ◽  
L. A. Vlasukova ◽  
O. V. Milchanin ◽  
Maksim Makhavikou ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Low Pressure ◽  
Light Emitting ◽  
Silicon Nitride Films
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