One‐step‐metalorganic‐vapor‐phase‐epitaxy‐grown AlGaInP visible laser using simultaneous impurity doping

C. Anayama; H. Sekiguchi; M. Kondo; H. Sudo; T. Fukushima; A. Furuya; T. Tanahashi

doi:10.1063/1.110699

One‐step‐metalorganic‐vapor‐phase‐epitaxy‐grown AlGaInP visible laser using simultaneous impurity doping

Applied Physics Letters ◽

10.1063/1.110699 ◽

1993 ◽

Vol 63 (13) ◽

pp. 1736-1738 ◽

Cited By ~ 18

Author(s):

C. Anayama ◽

H. Sekiguchi ◽

M. Kondo ◽

H. Sudo ◽

T. Fukushima ◽

...

Keyword(s):

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Visible Laser ◽

Impurity Doping ◽

One Step

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Real index-guided AlGaInP visible laser with high-bandgap energy AlInP current blocking layer grown by HCl-assisted metalorganic vapor phase epitaxy

IEEE Journal of Selected Topics in Quantum Electronics ◽

10.1109/2944.401263 ◽

1995 ◽

Vol 1 (2) ◽

pp. 723-727 ◽

Cited By ~ 14

Author(s):

R. Kobayashi ◽

H. Hotta ◽

F. Miyasaka ◽

K. Hara ◽

K. Kobayashi

Keyword(s):

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Bandgap Energy ◽

Blocking Layer ◽

Visible Laser ◽

Current Blocking Layer ◽

Current Blocking

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Real index guided AlGaInP visible laser with high bandgap energy AlInP current blocking layer grown by HCl-assisted metalorganic vapor phase epitaxy

Proceedings of IEEE 14th International Semiconductor Laser Conference ISLC-94 ◽

10.1109/islc.1994.519354 ◽

2002 ◽

Author(s):

R. Kobayashi ◽

H. Hotta ◽

F. Miyasaka ◽

K. Hara ◽

K. Kobayashi

Keyword(s):

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Bandgap Energy ◽

Blocking Layer ◽

Visible Laser ◽

Current Blocking Layer ◽

Current Blocking

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Impurity doping in InP layer grown by metalorganic vapor‐phase epitaxy using tertiarybutylphosphine and organic doping sources

Journal of Applied Physics ◽

10.1063/1.354342 ◽

1993 ◽

Vol 74 (7) ◽

pp. 4737-4740 ◽

Cited By ~ 4

Author(s):

M. Horita ◽

M. Suzuki ◽

Y. Matsushima ◽

K. Utaka

Keyword(s):

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Impurity Doping

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Buried GaInAs/InP layers grown on nonplanar substrates by one‐step low‐pressure metalorganic vapor phase epitaxy

Applied Physics Letters ◽

10.1063/1.100180 ◽

1988 ◽

Vol 53 (26) ◽

pp. 2638-2640 ◽

Cited By ~ 44

Author(s):

Yvan D. Galeuchet ◽

Peter Roentgen ◽

Volker Graf

Keyword(s):

Vapor Phase ◽

Low Pressure ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

One Step

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GaInAs/InP selective area metalorganic vapor phase epitaxy for one‐step‐grown buried low‐dimensional structures

Journal of Applied Physics ◽

10.1063/1.346829 ◽

1990 ◽

Vol 68 (2) ◽

pp. 560-568 ◽

Cited By ~ 78

Author(s):

Y. D. Galeuchet ◽

P. Roentgen ◽

V. Graf

Keyword(s):

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Selective Area ◽

One Step ◽

Low Dimensional

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Density functional theory study on surface adsorptions in AlN metalorganic vapor phase epitaxy process

Applied Surface Science ◽

10.1016/j.apsusc.2020.148773 ◽

2021 ◽

Vol 544 ◽

pp. 148773

Author(s):

Peng Lin ◽

Nannan Niu ◽

Ran Zuo ◽

Yulong Fang ◽

Zhihong Feng

Keyword(s):

Density Functional Theory ◽

Vapor Phase ◽

Density Functional ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Density Functional Theory Study ◽

Functional Theory

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Selective-area growth and characterization of cubic GaN grown by metalorganic vapor phase epitaxy

Thin Solid Films ◽

10.1016/j.tsf.2020.138125 ◽

2020 ◽

Vol 709 ◽

pp. 138125

Author(s):

Pattana Suwanyangyaun ◽

Sakuntam Sanorpim ◽

Kentaro Onabe

Keyword(s):

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Selective Area Growth ◽

Selective Area ◽

Area Growth ◽

Cubic Gan

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Acceptor doping of (Al,Ga)As using carbon by metalorganic vapor phase epitaxy

Journal of Crystal Growth ◽

10.1016/0022-0248(91)90469-l ◽

1991 ◽

Vol 107 (1-4) ◽

pp. 268-273 ◽

Cited By ~ 17

Author(s):

M.A. Tischler ◽

R.M. Potemski ◽

T.F. Kuech ◽

F. Cardone ◽

M.S. Goorsky ◽

...

Keyword(s):

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Acceptor Doping

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Study of the gas phase chemistry in the silicon doping of GaAs grown by metalorganic vapor phase epitaxy using tertiarybutylarsine as the group V source

Journal of Crystal Growth ◽

10.1016/0022-0248(94)90130-9 ◽

1994 ◽

Vol 135 (3-4) ◽

pp. 423-433 ◽

Cited By ~ 13

Author(s):

J.M. Redwing ◽

T.F. Kuech ◽

D. Saulys ◽

D.F. Gaines

Keyword(s):

Gas Phase ◽

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Silicon Doping ◽

Group V ◽

Gas Phase Chemistry ◽

Phase Chemistry

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Compensation of shallow impurities in oxygen‐doped metalorganic vapor phase epitaxy grown GaAs

Journal of Applied Physics ◽

10.1063/1.363811 ◽

1996 ◽

Vol 80 (12) ◽

pp. 6819-6826 ◽

Cited By ~ 9

Author(s):

J. W. Huang ◽

K. L. Bray ◽

T. F. Kuech

Keyword(s):

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Shallow Impurities

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