Very high mobility two‐dimensional hole gas in Si/GexSi1−x/Ge structures grown by molecular beam epitaxy

1993 ◽  
Vol 63 (16) ◽  
pp. 2263-2264 ◽  
Author(s):  
Y. H. Xie ◽  
Don Monroe ◽  
E. A. Fitzgerald ◽  
P. J. Silverman ◽  
F. A. Thiel ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Mobility ◽  
Two Dimensional ◽  
Very High

scholarly journals Direct Growth of Antimonene on C-Plane Sapphire by Molecular Beam Epitaxy

2020 ◽  
Vol 10 (2) ◽  
pp. 639
Author(s):  
Minghui Gu ◽  
Chen Li ◽  
Yuanfeng Ding ◽  
Kedong Zhang ◽  
Shunji Xia ◽  
...  
Keyword(s):  
Phase Diagram ◽  
Molecular Beam Epitaxy ◽  
Sapphire Substrate ◽  
Molecular Beam ◽  
Three Dimensional ◽  
High Mobility ◽  
Two Dimensional ◽  
Large Area ◽  
High Quality ◽  
Direct Growth

Monolayer antimony (antimonene) has been reported for its excellent properties, such as tuneable band gap, stability in the air, and high mobility. However, growing high quality, especially large-area antimonene, remains challenging. In this study, we report the direct growth of antimonene on c-plane sapphire substrate while using molecular beam epitaxy (MBE). We explore the effect of growth temperature on antimonene formation and present a growth phase diagram of antimony. The effect of antimony sources (Sb2 or Sb4) and a competing mechanism between the two-dimensional (2D) and three-dimensional (3D) growth processes and the effects of adsorption and cracking of the source molecules are also discussed. This work offers a new method for growing antimonene and it provides ideas for promoting van der Waals epitaxy.

scholarly journals High-Mobility Two-Dimensional Electron Gas at InGaN/InN Heterointerface Grown by Molecular Beam Epitaxy

2018 ◽  
Vol 5 (9) ◽  
pp. 1800844 ◽  
Author(s):  
Tao Wang ◽  
Xinqiang Wang ◽  
Zhaoying Chen ◽  
Xiaoxiao Sun ◽  
Ping Wang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Electron Gas ◽  
High Mobility ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Dimensional Electron Gas

Very high mobility HgTe films grown on GaAs substrates by molecular‐beam epitaxy

1988 ◽  
Vol 63 (8) ◽  
pp. 2872-2874 ◽  
Author(s):  
R. D. Feldman ◽  
M. Oron ◽  
R. F. Austin ◽  
R. L. Opila
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Mobility ◽  
Gaas Substrates ◽  
Very High

Molecular Beam Epitaxy study of a common a-GeO2 interfacial passivation layer for Ge- and GaAs-based MOS heterostructures

2009 ◽  
Vol 1155 ◽  
Author(s):  
Clement Merckling ◽  
Julien Penaud ◽  
Florence Bellenger ◽  
David Kohen ◽  
Geoffrey Pourtois ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Mobility ◽  
Substrate Material ◽  
Passivation Layer ◽  
Physical Chemical ◽  
Very High

AbstractFuture CMOS technologies will require the use of substrate material with a very high mobility. Therefore, the combination of Ge pMOS with GaAs nMOS devices is investigated for its possible use in advanced CMOS applications. In this work, the physical, chemical and electrical properties of a-GeO2 interfacial passivation layer (IPL) for n-Ge(001) and p-GaAs(001) have been investigated, using Molecular Beam Epitaxy (MBE) technique. The efficient electrical passivation of Ge/GeO2 will be demonstrated, and in the case of GaAs, the use of a thin a-GeO2 interlayer reduces the defects at the interface.

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