Low temperature optical response of a single grain boundary in superconducting YBa2Cu3O7−δthin film

1993 ◽  
Vol 63 (16) ◽  
pp. 2279-2281 ◽  
Author(s):  
S. Bhattacharya ◽  
M. Rajeswari ◽  
I. Takeuchi ◽  
X. X. Xi ◽  
S. N. Mao ◽  
...  
Keyword(s):  
Low Temperature ◽  
Grain Boundary ◽  
Optical Response ◽  
Single Grain

Short Channel Poly-Si TFT with Single Grain Boundary by Excimer Laser Annealing on Al-masked a-Si Layer

2002 ◽  
Vol 715 ◽  
Author(s):  
Sang-Hoon Jung ◽  
Jae-Hoon Lee ◽  
Min-Koo Han
Keyword(s):  
Grain Boundary ◽  
Laser Annealing ◽  
Thin Film Transistor ◽  
High Mobility ◽  
Silicon Layer ◽  
Silicon Thin Film ◽  
Short Channel ◽  
Excimer Laser Annealing ◽  
Boundary Density ◽  
Single Grain

AbstractA short channel polycrystalline silicon thin film transistor (poly-Si TFT), which has single grain boundary in the center of channel, is reported. The reported poly-Si TFT employs lateral grain growth method through aluminum patterns, which acts as a selective beam mask and a lateral heat sink during the laser irradiation, on an amorphous silicon layer. The electrical characteristics of the proposed poly-Si TFT have been considerably improved due to grain boundary density lowered. The reported short channel poly-Si TFT with single grain boundary exhibits high mobility as 222 cm2/Vsec and large on/off current ratio exceeding 1 × 108.

Grain Boundary Atomic Structures in SrTiO3 and BaTiO3

2007 ◽  
Vol 558-559 ◽  
pp. 851-856 ◽  
Author(s):  
Takahisa Yamamoto ◽  
Teruyasu Mizoguchi ◽  
S.Y. Choi ◽  
Yukio Sato ◽  
Naoya Shibata ◽  
...  
Keyword(s):  
Grain Boundary ◽  
Grain Boundaries ◽  
Annealing Temperature ◽  
Unit Length ◽  
Rate Dependency ◽  
Atomic Structures ◽  
Current Voltage ◽  
Single Grain ◽  
Current Voltage Characteristics ◽  
Theoretical Results

SrTiO3 bicrystals with various types of grain boundaries were prepared by joining two single crystals at high temperature. By using the bicrystals, we examined their current-voltage characteristics across single grain boundaries from a viewpoint of point defect segregation in the vicinity of the grain boundaries. Current-voltage property in SrTiO3 bicrystals was confirmed to show a cooling rate dependency from annealing temperature, indicating that cation vacancies accumulate due to grain boundary oxidation. The theoretical results obtained by ab-initio calculation clearly showed that the formation energy of Sr vacancies is the lowest comparing with Ti and O vacancies in oxidized atomosphere. The formation of a double Schottky barrier (DSB) in n-type SrTiO3 is considered to be closely related to the accumulation of the charged Sr vacancies. Meanwhile, by using three types of low angle boundaries, the excess charges related to one grain boundary dislocation par unit length was estimated. In this study, we summarized our results obtained in our group.

Prevention of Corrosion in Austenitic Stainless Steel through a Predictive Numerical Model Simulating Grain Boundary Chromium Depletion

2017 ◽  
pp. 374-389
Author(s):  
M.K. Samal
Keyword(s):  
Mathematical Model ◽  
Stainless Steel ◽  
Austenitic Stainless Steel ◽  
Numerical Model ◽  
Low Temperature ◽  
Grain Boundary ◽  
Stainless Steels ◽  
Predictive Models ◽  
Chromium Depletion ◽  
Sensitization Behavior

In this chapter, a mathematical model for rate of formation of chromium carbides near the grain boundary, which is a pre-cursor to chromium depletion and corresponding sensitization behavior in stainless steels, is presented. This model along with the diffusion equation for chromium in the grain has been used to obtain chromium depletion profiles at various time and temperature conditions. Finite difference method has been used to solve the above equations in the spherical co-ordinate system and the results of time-temperature-sensitization diagrams of four different types of alloys have been compared with those of experiment from literature. For the problem of low temperature sensitization and corresponding inter-granular corrosion in austenitic stainless steel, it is very difficult to carry out experiment at higher temperatures and justify its validity at lower operating temperatures by extrapolation. The development of predictive models is highly useful in order to design the structures for prevention of corrosion of the material in aggressive environments.

Analysis of Logic Inverter Based on Polycrystalline Silicon with Single Grain Boundary

2020 ◽  
Vol 20 (11) ◽  
pp. 6616-6621
Author(s):  
Hye Jin Mun ◽  
Min Su Cho ◽  
Jun Hyeok Jung ◽  
Won Douk Jang ◽  
Sang Ho Lee ◽  
...  
Keyword(s):  
Grain Boundary ◽  
Polycrystalline Silicon ◽  
Complementary Metal Oxide Semiconductor ◽  
Deep Trap ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Shallow Trap ◽  
Nanoscale Cmos ◽  
Dc Characteristics ◽  
Single Grain

In this paper, we demonstrate the characteristics of a complementary metal-oxide-semiconductor (CMOS) logic inverter based on a polycrystalline-silicon (poly-Si) layer with a single grain boundary (GB). The proposed nanoscale CMOS logic inverter had been constructed on a poly-Si layer with a GB including four kind of traps at the center of the channel. The simulation variables are the acceptor-like deep trap (ADT), the donor-like deep trap (DDT), the acceptor-like shallow trap (AST) and the donor-like shallow trap (DST). The ADT and the DDT much stronger influences on the DC characteristics of the devices than the AST and the DST. The variation of voltage-transfer-curve (VTC) for CMOS devices directly affected the CMOS logic inverter with different traps.

Microstructural Control through Diffusion-Induced Grain Boundary Migration

1987 ◽  
Vol 106 ◽  
Author(s):  
Carol A. Handwerker ◽  
John W. Cahn
Keyword(s):  
Low Temperature ◽  
Grain Boundary ◽  
Boundary Migration ◽  
Grain Boundary Migration ◽  
Compound Formation ◽  
Moving Interface ◽  
Interface Theory ◽  
Temperature Deposition ◽  
Compositional Changes ◽  
Chemical Mixing

ABSTRACTDiffusion-induced grain boundary migration (DIGM) is a common, but only recently discovered low temperature phenomenon that results in high rates of both chemical mixing (or unmixing) and grain boundary migration. DIGM is found in many situations where chemical heterogeneities lead to diffusion. For example, DIGM is observed during diffusion and compound formation in polycrystalline multilayer contact systems produced by low temperature deposition techniques. The diffusional mixing along the moving grain boundary is high, localized, and results in a distinctive composition profile behind the moving interface. Theory has indicated, and experiments have confirmed, which conditions lead to DIGM and which conditions suppress it. The microstructural changes can result in either a grain refinement as seen in many metallic systems or in enhanced grain growth as seen in polysilicon. In either case these microstructural and compositional changes are controllable in a way that may allow fabrication of unique devices.

Noise characteristics of single grain boundary junction DC SQUIDs in Y1Ba2Cu3O7−δ films

1990 ◽  
Vol 170 (3-4) ◽  
pp. 315-318 ◽  
Author(s):  
R. Gross ◽  
P. Chaudhari ◽  
M. Kawasaki ◽  
M. Ketchen ◽  
A. Gupta
Keyword(s):  
Grain Boundary ◽  
Noise Characteristics ◽  
Single Grain
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