Carrier capture processes in GaAs‐AlGaAs quantum wells due to emission of confined phonons

1993 ◽  
Vol 63 (22) ◽  
pp. 3026-3028 ◽  
Author(s):  
Gerald Weber ◽  
Ana Maria de Paula
Keyword(s):  
Quantum Wells ◽  
Carrier Capture ◽  
Confined Phonons

THE QUASI-CONFINED OPTICAL PHONONS IN WURTZITE SYMMETRY MULTIPLE QUANTUM WELLS

2006 ◽  
Vol 20 (22) ◽  
pp. 1367-1381 ◽  
Author(s):  
WEN-DENG HUANG ◽  
SHU-YI WEI ◽  
YA-JIE REN
Keyword(s):  
Quantum Wells ◽  
Equation Of Motion ◽  
Uniaxial Crystal ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Single Quantum Well ◽  
Crystal Model ◽  
Dielectric Continuum ◽  
Dielectric Continuum Model ◽  
Confined Phonons

Within the framework of the dielectric-continuum model and Loudon's uniaxial crystal model, the equation of motion for p-polarization field in wurtzite multiplayer symmetry heterostructures are solved for the quasi-confined phonon (QC) modes. The polarization eigenvector, the dispersion relation, and the electron-QC interaction Fröhlich-like Hamiltonian are derived by using the transfer-matrix method. The analytical theory and formulas can be directly applied to the single quantum well (QW) and multiple quantum wells (QWs), and superlattices (SLs). The dispersion relations and the electron-QC coupling strength are investigated for a wurtzite GaN/Al 0.15 Ga 0.85 N single QW. The results show that there are infinite branches of the dispersion curve with definite symmetry with respect to the center of the QW structure. The confinement of the quasi-confined phonons in the QW leads to a quantization of qz,j characterized by an integer m that defines the order of corresponding quasi-confined modes. The QC modes are more dispersive for decreasing m. The QC modes display an interface behavior in the barrier and a confined behavior in the well. When q⊥ is small, the symmetric modes have more contribution to electron-QC interaction than the antisymmetric modes.

Interface and confined phonons in stepped quantum wells

1999 ◽  
Vol 263-264 ◽  
pp. 507-509 ◽  
Author(s):  
P Kinsler ◽  
R.W Kelsall ◽  
P Harrison
Keyword(s):  
Quantum Wells ◽  
Confined Phonons

Carrier capture in InAs monolayer quantum wells grown on GaAs substrates

1998 ◽  
Vol 43-44 ◽  
pp. 287-293 ◽  
Author(s):  
S.J Chua ◽  
S.J Xu ◽  
X.H Zhang ◽  
X Zhang
Keyword(s):  
Quantum Wells ◽  
Carrier Capture ◽  
Gaas Substrates

CARRIER CAPTURE IN SEMICONDUCTOR QUANTUM WELL LASERS: A QUANTUM TRANSPORT ANALYSIS

1998 ◽  
Vol 09 (04) ◽  
pp. 1211-1233 ◽  
Author(s):  
LEONARD F. REGISTER
Keyword(s):  
Wave Function ◽  
Quantum Wells ◽  
Quantum Transport ◽  
Golden Rule ◽  
Carrier Wave ◽  
Carrier Capture ◽  
The Past ◽  
Semiconductor Quantum Wells ◽  
Semiconductor Quantum Well ◽  
Transport Analysis

A quantum transport-based analysis of the essential physics of carrier capture in semiconductor quantum wells is presented. First, the past progression of models of carrier capture by quantum wells is briefly reviewed. Then carrier capture is modeled using the Schrödinger Equation Monte Carlo (SEMC) quantum transport simulator. In addition to reproducing familiar effects, these simulations exhibit significant effects associated with partial phase-coherence of the carrier wave-function across the well which cannot be modeled via classical or perturbative Golden Rule calculations, and address fundamental transport limitations often overlooked in Golden Rule calculations. However, this analysis also points to simple changes that could significantly improve, although not perfect, the treatment of carrier capture via these latter more conventional approaches.

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