scholarly journals Effect of hydrogen on surface roughening during Si homoepitaxial growth

1993 ◽  
Vol 63 (26) ◽  
pp. 3571-3573 ◽  
Author(s):  
D. P. Adams ◽  
S. M. Yalisove ◽  
D. J. Eaglesham
Keyword(s):  
Surface Roughening ◽  
Homoepitaxial Growth

Surface roughening of diamond (001) films during homoepitaxial growth in heavy boron doping

2007 ◽  
Vol 16 (4-7) ◽  
pp. 767-770 ◽  
Author(s):  
Norio Tokuda ◽  
Hitoshi Umezawa ◽  
Takeyasu Saito ◽  
Kikuo Yamabe ◽  
Hideyo Okushi ◽  
...  
Keyword(s):  
Boron Doping ◽  
Surface Roughening ◽  
Homoepitaxial Growth

X‐ray truncation rod study of Ge(001) surface roughening by molecular beam homoepitaxial growth

1996 ◽  
Vol 79 (9) ◽  
pp. 6858-6864 ◽  
Author(s):  
Hawoong Hong ◽  
R. D. Aburano ◽  
Ki‐Sup Chung ◽  
D.‐S. Lin ◽  
E. S. Hirschorn ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Surface Roughening ◽  
X Ray ◽  
Homoepitaxial Growth

Observation of surface roughening on Cu(1, 1, 5)

1987 ◽  
Vol 48 (6) ◽  
pp. 1017-1028 ◽  
Author(s):  
F. Fabre ◽  
D. Gorse ◽  
B. Salanon ◽  
J. Lapujoulade
Keyword(s):  
Surface Roughening

scholarly journals (Ti,Al)O2 Whiskers Grown during Glow Discharge Nitriding of Ti-6Al-7Nb Alloy

Materials ◽  
2021 ◽  
Vol 14 (10) ◽  
pp. 2658
Author(s):  
Krzysztof Szymkiewicz ◽  
Jerzy Morgiel ◽  
Łukasz Maj ◽  
Małgorzata Pomorska
Keyword(s):  
Surface Hardening ◽  
Surface Defects ◽  
Plasma Nitriding ◽  
Surface Roughening ◽  
Effective Surface ◽  
Plan View ◽  
Gas Nitriding ◽  
Transmission Electron ◽  
Temperature Window ◽  
20 Nm

Plasma nitriding of titanium alloys is capable of effective surface hardening at temperatures significantly lower than gas nitriding, but at a cost of much stronger surface roughening. Especially interesting are treatments performed at the lower end of the temperature window used in such cases, as they are least damaging to highly polished parts. Therefore identifying the most characteristic defects is of high importance. The present work was aimed at identifying the nature of pin-point bumps formed at the glow discharged plasma nitrided Ti-6Al-7Nb alloy using plan-view scanning and cross-section transmission electron microscopy methods. It helped to establish that these main surface defects developed at the treated surface are (Ti,Al)O2 nano-whiskers of diameter from 20 nm to 40 nm, and length up to several hundreds of nanometers. The performed investigation confirmed that the surface imperfection introduced by plasma nitriding at the specified range should be of minor consequences to the mechanical properties of the treated material.

Homoepitaxial growth and investigation of stacking faults of 4H-SiC C-face epitaxial layers with a 1° off-angle

2015 ◽  
Vol 54 (4S) ◽  
pp. 04DP04 ◽  
Author(s):  
Keiko Masumoto ◽  
Hirokuni Asamizu ◽  
Kentaro Tamura ◽  
Chiaki Kudou ◽  
Johji Nishio ◽  
...  
Keyword(s):  
Stacking Faults ◽  
Epitaxial Layers ◽  
Homoepitaxial Growth
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