Annealing of low‐temperature GaAs studied using a variable energy positron beam

1993 ◽  
Vol 63 (1) ◽  
pp. 87-89 ◽  
Author(s):  
D. J. Keeble ◽  
M. T. Umlor ◽  
P. Asoka‐Kumar ◽  
K. G. Lynn ◽  
P. W. Cooke
Keyword(s):  
Low Temperature ◽  
Positron Beam ◽  
Low Temperature Gaas ◽  
Variable Energy

Variable energy positron beam characterization of defects in as-grown and annealed low temperature grown GaAs

1993 ◽  
Vol 22 (12) ◽  
pp. 1405-1408 ◽  
Author(s):  
M. T. Umlor ◽  
D. J. Keeble ◽  
P. W. Cooke ◽  
P. Asoka-Kumar ◽  
K. G. Lynn
Keyword(s):  
Low Temperature ◽  
Positron Beam ◽  
Beam Characterization ◽  
Low Temperature Grown Gaas ◽  
Variable Energy

Study of Modulation in GaAs Misfets with LT-GaAs as a Gate Insulator

1991 ◽  
Vol 241 ◽  
Author(s):  
L.-W. Yin ◽  
J. Ibbetson ◽  
M. M. Hashemi ◽  
W. Jiang ◽  
S.-Y. Hu ◽  
...  
Keyword(s):  
Low Temperature ◽  
Gaas Layer ◽  
Gate Insulator ◽  
Gate Bias ◽  
Channel Current ◽  
Turn On ◽  
Dc Characteristics ◽  
Low Temperature Gaas ◽  
Channel Separation ◽  
Lt Gaas

ABSTRACTDC characteristics of a GaAs MISFET structure using low-temperature GaAs (LTGaAs) as the gate insulator were investigated. MISFETs with different gate to channel separation (d) were fabricated. The dependence of four important device parameters such as gate-drain breakdown voltage (VBR), channel current at zero gate bias (Idss), transconductance (gm), and gate-drain turn-on voltage (Von) on the gate insulator thickness were analyzed. It was observed that (a) in terms of Idss and gin, the LT-GaAs gate insulator behaves like an undoped regular GaAs layer and (b) in terms of VBR and Von, the LT-GaAs gate insulator behaves as a trap dominated layer.

Electrical Characterization of Low Temperature GaAs Layers, and Observation of the Extremely Large Carrier Concentrations in Undoped Material

1991 ◽  
Vol 241 ◽  
Author(s):  
Bijan Tadayon ◽  
Mohammad Fatemi ◽  
Saied Tadayon ◽  
F. Moore ◽  
Harry Dietrich
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Electrical Characterization ◽  
Physical Characteristics ◽  
Hall Measurements ◽  
Undoped Material ◽  
Low Temperature Gaas

ABSTRACTWe present here the results of a study on the effect of substrate temperature, Ts, on the electrical and physical characteristics of low temperature (LT) molecular beam epitaxy GaAs layers. Hall measurements have been performed on the asgrown samples and on samples annealed at 610 °C and 850 °C. Si implantation into these layers has also been investigated.

Low temperature GaAs/Si direct wafer bonding

2000 ◽  
Vol 36 (7) ◽  
pp. 677 ◽  
Author(s):  
M. Alexe ◽  
V. Dragoi ◽  
M. Reiche ◽  
U. Gösele
Keyword(s):  
Low Temperature ◽  
Wafer Bonding ◽  
Direct Wafer Bonding ◽  
Low Temperature Gaas

Low-temperature-GaAs device used simultaneously as a mode-locking device and as a photoconductive switch

2002 ◽  
Vol 41 (12) ◽  
pp. 2228
Author(s):  
Martin Leitner ◽  
Peter Glas ◽  
Peter Semionyk ◽  
Marc Wrage ◽  
Jens Herfort ◽  
...  
Keyword(s):  
Low Temperature ◽  
Mode Locking ◽  
Photoconductive Switch ◽  
Low Temperature Gaas

Terahertz Generation Study of Ultrafast Carrier Dynamics in Polycrystalline Low-Temperature GaAs

2003 ◽  
Vol 93 ◽  
pp. 367-374
Author(s):  
N. Kawasaki ◽  
Takeshi Yoshimura ◽  
Masayoshi Tonouchi ◽  
M. Tani ◽  
Kazufumi Sakai ◽  
...  
Keyword(s):  
Low Temperature ◽  
Carrier Dynamics ◽  
Terahertz Generation ◽  
Ultrafast Carrier Dynamics ◽  
Ultrafast Carrier ◽  
Low Temperature Gaas

Laser Quality AlGaAs-GaAs Quantum Wells Grown on Low Temperature GaAs

1991 ◽  
Vol 241 ◽  
Author(s):  
Y. Hwang ◽  
D. Zhang ◽  
T. Zhang ◽  
M. Mytych ◽  
R. M. Kolbas
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Quantum Wells ◽  
Barrier Layer ◽  
Molecular Beam ◽  
Optical Quality ◽  
First Order ◽  
Gaas Buffer Layer ◽  
Low Temperature Gaas ◽  
Lt Gaas

ABSTRACTIn this work we demonstrate that photopumped quantum wellheterostructure lasers with excellent optical quality can be grown ontop of a LT GaAs buffer layer by molecular beam epitaxy. Hightemperature thermal annealing of these lasers blue-shifts the laseremission wavelengths but the presence/absence of a LT GaAs layerhad little effect on the overall laser thresholds. Also, to first order itwas not necessary to include an AlAs barrier layer to preventadverse effects (as has been necessary in the gate stack of MESFETs to prevent carrier compensation).

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