Confinement of high Be doping levels in AlInAs/GaInAsnpnheterojunction bipolar transistors by low temperature molecular‐beam epitaxial growth
1992 ◽
Vol 10
(2)
◽
pp. 856
◽
1990 ◽
Vol 8
(2)
◽
pp. 297
◽
1995 ◽
Vol 34
(Part 2, No. 3B)
◽
pp. L339-L341
1995 ◽
Vol 150
◽
pp. 755-759
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1994 ◽
Vol 145
(1-4)
◽
pp. 935-940
◽