Low resistance wavelength‐reproduciblep‐type (Al,Ga)As distributed Bragg reflectors grown by molecular beam epitaxy

1993 ◽  
Vol 62 (14) ◽  
pp. 1585-1587 ◽  
Author(s):  
S. A. Chalmers ◽  
K. L. Lear ◽  
K. P. Killeen
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Bragg Reflectors ◽  
Distributed Bragg Reflectors ◽  
Low Resistance

ZnMgSe/ZnCdSe and ZnMgSe/ZnSeTe distributed Bragg reflectors grown by molecular beam epitaxy

1999 ◽  
Vol 86 (2) ◽  
pp. 719-724 ◽  
Author(s):  
F. C. Peiris ◽  
S. Lee ◽  
U. Bindley ◽  
J. K. Furdyna
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Bragg Reflectors ◽  
Distributed Bragg Reflectors

Characterization of AlxGa1-xN/ AlyGa1-yN Distributed Bragg Reflectors Grown by Plasma Assisted Molecular Beam Epitaxy

2001 ◽  
Vol 693 ◽  
Author(s):  
H. Klausing ◽  
F. Fedler ◽  
T. Rotter ◽  
D. Mistele ◽  
O. Semchinova ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Mole Fraction ◽  
Molecular Beam ◽  
Bragg Reflectors ◽  
Distributed Bragg Reflectors ◽  
X Ray Diffraction ◽  
Al Content ◽  
Dispersion Data ◽  
Quarter Wave

AbstractAlxGa1-xN/ AlyGa1-yN Distributed Bragg Reflectors (DBRs) with up to 45 periods have been grown on (0001) sapphire substrates by r.f. plasma-assisted molecular beam epitaxy (PAMBE) with the aid of two Al effusion cells. Several samples were grown with an Al mole fraction varying between 0.38 ≤ x ≤ 1 (0 ≤ y ≤ 0.4) at temperatures of up to 890°C. In all samples, an AlxGa1-xN buffer layer was used to prevent cracking of the quarter wave stack and improving surface morphology by choosing the Al content so that strain energy in the DBR structure would be compensated.X-ray diffraction (XRD) and scanning electron microscopy (SEM) investigations were performed to determine the thickness of the quarter wave layer periods and the Al mole fraction of corresponding AlxGa1-xN single layers.Room-temperature calibrated reflection and transmission (R&T) measurements were performed. Thus stray and self-absorption of the DBRs were extracted from reflectance and transmittance. The thickness of the quarter wave layers was designed such that the measured peak reflectances appeared between 346 nm to 421 nm. The dispersion data, including refractive indices and absorption coefficients, used in the calculation were extracted from R&T measurements done on the above mentioned AlxGa1-xN single layers.

scholarly journals Hybrid ZnO/GaN distributed Bragg reflectors grown by plasma-assisted molecular beam epitaxy

APL Materials ◽  
2016 ◽  
Vol 4 (8) ◽  
pp. 086106 ◽  
Author(s):  
David Adolph ◽  
Reza R. Zamani ◽  
Kimberly A. Dick ◽  
Tommy Ive
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Bragg Reflectors ◽  
Distributed Bragg Reflectors

High-quality distributed Bragg reflectors based on AlxGa1−xN/GaN multilayers grown by molecular-beam epitaxy

2001 ◽  
Vol 79 (14) ◽  
pp. 2136-2138 ◽  
Author(s):  
S. Fernández ◽  
F. B. Naranjo ◽  
F. Calle ◽  
M. A. Sánchez-Garcı́a ◽  
E. Calleja ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Bragg Reflectors ◽  
Distributed Bragg Reflectors ◽  
High Quality

Surface emitting devices with distributed Bragg reflectors grown by highly precise molecular beam epitaxy

1993 ◽  
Vol 127 (1-4) ◽  
pp. 1-4 ◽  
Author(s):  
M. Sugimoto ◽  
I. Ogura ◽  
H. Saito ◽  
A. Yasuda ◽  
K. Kurihara ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Bragg Reflectors ◽  
Distributed Bragg Reflectors
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