Photoluminescence, Raman scattering, and infrared absorption studies of porous silicon

1993 ◽  
Vol 62 (15) ◽  
pp. 1812-1814 ◽  
Author(s):  
Y. H. Seo ◽  
H.‐J. Lee ◽  
H. I. Jeon ◽  
D. H. Oh ◽  
K. S. Nahm ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Raman Scattering ◽  
Infrared Absorption ◽  
Absorption Studies

Strained Quantum Dots in Porous Silicon

1992 ◽  
Vol 283 ◽  
Author(s):  
Xue-Shu Zhao ◽  
Peter D. Persans ◽  
John Schroeder ◽  
Yeun-Jung Wu
Keyword(s):  
Quantum Dots ◽  
Porous Silicon ◽  
Quantum Dot ◽  
Raman Scattering ◽  
Electronic Transition ◽  
Silicon Nanoparticle ◽  
Localized State ◽  
Strong Luminescence ◽  
Absorption Studies ◽  
Jahn Teller

ABSTRACTOn the basis of Raman, photoluminescence, and absorption studies of porous and nanoparticle silicon we propose that the strong luminescence in porous silicon results from strained silicon quantum dots. A silicon nanoparticle is a special Jahn-Teller system induced by extended electron states rather than localized state. Thus Raman scattering and photoluminescence in porous silicon are multi-phonon assisted free electronic transition processes, all observed anomalous properties of porous silicon can be clearly explained by using this strained quantum dot model.

ORTHO AND PARA STATES OF INTERSTITIAL H2 IN SILICON AND GALLIUM ARSENIDE

2004 ◽  
Vol 18 (11) ◽  
pp. 453-466 ◽  
Author(s):  
E. V. LAVROV
Keyword(s):  
Gallium Arsenide ◽  
Raman Scattering ◽  
Band Gap ◽  
Raman Spectra ◽  
Spin State ◽  
Infrared Absorption ◽  
Nuclear Spin ◽  
Hydrogen Molecule ◽  
Room Temperature ◽  
Absorption Studies

A survey of recent Raman scattering studies on the interstitial hydrogen molecule ( H 2) in Si and GaAs is presented. It is shown that properties of H 2 strongly depend on the nuclear spin state I. In either material, para- H 2 (I=0) is unstable against irradiation with band gap light. In the case of Si, para- H 2 also preferentially disappears from the Raman spectra in the course of storage at room temperature in the dark. Possible explanations for this surprising behavior are discussed and compared with the latest infrared absorption studies.

Anisotropic and polarization effects in Raman scattering in porous silicon

1995 ◽  
Vol 255 (1-2) ◽  
pp. 139-142 ◽  
Author(s):  
I. Gregora ◽  
B. Champagnon ◽  
L. Saviot ◽  
Y. Monin
Keyword(s):  
Porous Silicon ◽  
Raman Scattering ◽  
Polarization Effects

Investigation of porous silicon by Raman scattering and second-harmonic generation techniques

1994 ◽  
Author(s):  
Leonid A. Golovan ◽  
Andrei V. Zoteyev ◽  
Pavel K. Kashkarov ◽  
Viktor Y. Timoshenko
Keyword(s):  
Porous Silicon ◽  
Raman Scattering ◽  
Second Harmonic Generation ◽  
Harmonic Generation ◽  
Second Harmonic

Two-magnon raman scattering and infrared absorption in (MnZn)F2

1972 ◽  
Vol 5 (15) ◽  
pp. 2011-2026 ◽  
Author(s):  
M Buchanan ◽  
W J L Buyers ◽  
R J Elliott ◽  
R T Harley ◽  
W Hayes ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Infrared Absorption
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