Effects of annealing conditions on heavily carbon‐doped InGaAs

1993 ◽  
Vol 62 (20) ◽  
pp. 2578-2580
Author(s):  
W. Y. Han ◽  
L. Calderon ◽  
Y. Lu ◽  
S. N. Schauer ◽  
R. P. Moerkirk ◽  
...  
Keyword(s):  
Carbon Doped ◽  
Annealing Conditions

A Study of Gettering Efficiency and Stability in Czochralski Silicon

1995 ◽  
Vol 378 ◽  
Author(s):  
Scott A. McHugo ◽  
E. R. Weber ◽  
M. Mizuno ◽  
F. G. Kirscht
Keyword(s):  
Carbon Material ◽  
Strain Field ◽  
Annealing Treatment ◽  
Site Formation ◽  
Low Carbon ◽  
High Carbon ◽  
Carbon Doped ◽  
Annealing Conditions ◽  
Oxygen Precipitation ◽  
Induced Defects

AbstractGettering efficiencies and stabilities of internal gettering sites for metallic impurities in high and low carbon doped silicon have been compared with ramped and standard two-step pre-annealing conditions. This study was intended to compare two proposed techniques to shorten the long low temperature nucleation step in the standard Hi-Lo-Hi internal gettering site formation treatment. Specifically, we compare the affect of carbon and a ramped annealing sequence on oxygen precipitate formation and gettering effectiveness. Our results show both techniques accelerate oxygen precipitation, however, only the low carbon ramped materials produced efficient and stable gettering sites. The high carbon materials did not with either annealing treatment. This disparity in performance is due to a difference in the oxygen precipitate’s strain field. The precipitates in the low carbon material possessed a high strain field with strain-induced defects while in the high carbon material they were strain-free with no defects. These results indicate the strain stabilizes the gettered impurity such that the gettering rate is increased and stability is enhanced.

Structural and compositional evolution of carbon-doped Ge2Sb2Te5 film under different annealing conditions

2013 ◽  
Vol 548 ◽  
pp. 40-43 ◽  
Author(s):  
Ki-Hong Kim ◽  
Yong-Koo Kyoung ◽  
Dong-Jin Yun ◽  
Sang-Jun Choi
Keyword(s):  
Carbon Doped ◽  
Compositional Evolution ◽  
Annealing Conditions

MAGNETIC ANISOTROPY OF CARBON DOPED Nd2Fe14B

1985 ◽  
Vol 46 (C6) ◽  
pp. C6-305-C6-308 ◽  
Author(s):  
F. Bolzoni ◽  
F. Leccabue ◽  
L. Pareti ◽  
J. L. Sanchez
Keyword(s):  
Magnetic Anisotropy ◽  
Carbon Doped

Effect of annealing conditions on structural transformation of ZnS thin film

2006 ◽  
Vol 2006 (suppl_23_2006) ◽  
pp. 287-292 ◽  
Author(s):  
T. Kryshtab ◽  
J. Palacios-Gómez ◽  
M. Mazin
Keyword(s):  
Thin Film ◽  
Structural Transformation ◽  
Annealing Conditions

Two-Dimensional Local Deep-Level Transient Spectroscopy Imaging Using Super-Higher-Order Scanning Nonlinear Dielectric Microscopy

2016 ◽  
Author(s):  
N. Chinone ◽  
Y. Cho ◽  
R. Kosugi ◽  
Y. Tanaka ◽  
S. Harada ◽  
...  
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Higher Order ◽  
Trap Density ◽  
New Technique ◽  
Two Dimensional ◽  
Nonlinear Dielectric ◽  
Annealing Conditions ◽  
Transient Spectroscopy ◽  
A New Technique

Abstract A new technique for local deep level transient spectroscopy (DLTS) imaging using super-higher-order scanning nonlinear dielectric microscopy is proposed. Using this technique. SiCVSiC structure samples with different post oxidation annealing conditions were measured. We observed that the local DLTS signal decreases with post oxidation annealing (POA), which agrees with the well-known phenomena that POA reduces trap density. Furthermore, obtained local DLTS images had dark and bright areas, which is considered to show the trap distribution at/near SiCVSiC interface.

scholarly journals Annealing Condition Effects on the Structural Properties of FePt Nanoparticles Embedded in MgO via Pulsed Laser Deposition

Nanomaterials ◽  
2021 ◽  
Vol 11 (1) ◽  
pp. 131
Author(s):  
Tingting Xiao ◽  
Qi Yang ◽  
Jian Yu ◽  
Zhengwei Xiong ◽  
Weidong Wu
Keyword(s):  
Pulsed Laser Deposition ◽  
Room Temperature ◽  
High Vacuum ◽  
Pulsed Laser ◽  
Annealing Process ◽  
Ultra High Vacuum ◽  
Laser Deposition ◽  
Fept Nanoparticles ◽  
Annealing Conditions ◽  
Vacuum Atmosphere

FePt nanoparticles (NPs) were embedded into a single-crystal MgO host by pulsed laser deposition (PLD). It was found that its phase, microstructures and physical properties were strongly dependent on annealing conditions. Annealing induced a remarkable morphology variation in order to decrease its total free energy. H2/Ar (95% Ar + 5% H2) significantly improved the L10 ordering of FePt NPs, making magnetic coercivity reach 37 KOe at room temperature. However, the samples annealing at H2/Ar, O2, and vacuum all showed the presence of iron oxide even with the coverage of MgO. MgO matrix could restrain the particles’ coalescence effectively but can hardly avoid the oxidation of Fe since it is extremely sensitive to oxygen under the high-temperature annealing process. This study demonstrated that it is essential to anneal FePt in a high-purity reducing or ultra-high vacuum atmosphere in order to eliminate the influence of oxygen.

Annealing Conditions of SCO Buffer Layer via Slot-Die Technique

2016 ◽  
Vol 26 (4) ◽  
pp. 1-3
Author(s):  
M. Lei ◽  
M. H. Pu ◽  
Y. Zhang ◽  
Y. Zhao
Keyword(s):  
Buffer Layer ◽  
Annealing Conditions ◽  
Slot Die
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