W(Zn) selectively deposited and locally diffused ohmic contacts top‐InGaAs/InP formed by rapid thermal low pressure metalorganic chemical vapor deposition

1993 ◽  
Vol 62 (21) ◽  
pp. 2652-2654 ◽  
Author(s):  
A. Katz ◽  
A. El‐Roy ◽  
A. Feingold ◽  
M. Geva ◽  
N. Moriya ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Ohmic Contacts ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Metalorganic Chemical

Another Step in Developing a Single Wafer Integrated Process: Rapid Thermal Low Pressure Metalorganic Chemical Vapor Deposition of Local Diffused W(Zn) Contacts

1992 ◽  
Vol 282 ◽  
Author(s):  
A. Katz ◽  
A. Feingold ◽  
A. El-Roy ◽  
N. Moriya ◽  
S. J. Pearton ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Ohmic Contacts ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Semiconductor Layer ◽  
Specific Contact Resistance ◽  
Specific Contact ◽  
Metalorganic Chemical

ABSTRACTA selective deposition of W(Zn) metallization, for formation of diffused ohmic contacts onto InP-based material was realized by means of rapid thermal, low pressure metalorganic chemical vapor deposition (RT-LPMOCVD). The W(Zn) layers were deposited using a reactive gas mixture that contained diethylzinc (DEZn), WF6, H2 and Ar, at temperatures of 450 to 550°C and pressures in the range of 1–5 torr. Uniform andcontinuous layers of W(Zn), 30 to 120 nm thick, were obtained. These layers contained Zn at concentrations higher than 1×l018 cm−3, which was subsequentially in-diffused into the underlying semiconductor layer to form highly doped semiconductor layers as thick as 0.2μm. As a result, the specific contact resistance of the W(Zn)/ In0.53Ga0.47 As contact was reduced to minimum value of 5×l0−6 Ω·cm2. The W(Zn) film were found to be mechanically stable with a small compressive stress of 5.10−8 dyne. cm−2, and dry etch rates of up to 90 nmmin.

GaInN/GaN Multi-Quantum Well Laser Diodes Grown by Low-Pressure Metalorganic Chemical Vapor Deposition

1998 ◽  
Vol 3 ◽  
Author(s):  
P. Kung ◽  
A. Saxler ◽  
D. Walker ◽  
A. Rybaltowski ◽  
Xiaolong Zhang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Quantum Well ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Multi Quantum Well ◽  
Metalorganic Chemical

We report the growth, fabrication and characterization of GaInN/GaN multi-quantum well lasers grown on (00·1) sapphire substrates by low pressure metalorganic chemical vapor deposition. The threshold current density of a 1800 μm long cavity length laser was 1.4 kA/cm2 with a threshold voltage of 25 V. These lasers exhibited series resistances of 13 and 14 Ω at 300 and 79 K, respectively.

Fabrication/Characterization of a Pseudomorphic Ga0.1In0.9P/InP MESFET

1993 ◽  
Vol 300 ◽  
Author(s):  
M. S. Feng ◽  
Y. M. Hsin ◽  
C. H. Wu
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Energy Gap ◽  
Chemical Vapor ◽  
Drain Current ◽  
Low Pressure ◽  
Inp Substrate ◽  
Metalorganic Chemical

ABSTRACTA pseudomorphic Ga0.1In0.9P/InP MESFET grown by low pressure metalorganic chemical vapor deposition(LP-MOCVD) has been fabricated and characterized. The results indicated a transconductance of 66.7 ms/mm and a saturation drain current (Idss) of 55.6 mA have been achieved; furthermore, the Schottky barrier on InGaP as high as 0.67eV can be obtained using Pt2Si as the gate material. For comparison, a conventional InP MESFET with 5μm gate length has also been fabricated on InP epitaxial layer grown by low pressure metalorganic chemical vapor deposition on Fe-doped semi-insulating InP substrate. The transconductance and Idss were found to be 46.7 mS/mm and 43.1 mA at zero gate, respectively, for the depletion mode n-channel MESFET with Au as the gate metal; whereas, for the MESFET using Pt2Si as the gate metal, a transconductance of 40.3 mS/mm and a saturation drain current of 41.1 mA at zero gate bias have been obtained. The results indicated that Ga0.1In0.9P/lnP MESFET has better performance than InP MESFET because of higher energy gap of Ga0.1In0.9P.

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