Growth of stable dislocation‐free 3‐grain silicon ingots for thinner slicing

1993 ◽  
Vol 62 (25) ◽  
pp. 3262-3263 ◽  
Author(s):  
G. Martinelli ◽  
R. Kibizov
Keyword(s):  
Stable Dislocation

Stable dislocation configuration in the surface layer of metals

2007 ◽  
Vol 52 (13) ◽  
pp. 1864-1866 ◽  
Author(s):  
Dong Li ◽  
WeiMing Mao ◽  
YongNing Yu
Keyword(s):  
Surface Layer ◽  
Dislocation Configuration ◽  
Stable Dislocation

scholarly journals Formation of Stable Dislocation Network in Austenite and Its Effect on Nucleation of BWING in Bainitic Steels

2015 ◽  
Vol 33 (2) ◽  
pp. 71s-74s
Author(s):  
Tatsuaki Sakamoto ◽  
Takafumi Hiramoto ◽  
Kiyomichi Nakai ◽  
Sengo Kobayashi ◽  
Hiroaki Ohfuji ◽  
...  
Keyword(s):  
Dislocation Network ◽  
Bainitic Steels ◽  
Stable Dislocation

Plastic Behavior of Metals in Reverse Straining after Large Pre-Strains

2008 ◽  
Vol 579 ◽  
pp. 41-60 ◽  
Author(s):  
Irene J. Beyerlein
Keyword(s):  
Bauschinger Effect ◽  
Large Strain ◽  
Large Fraction ◽  
Small Scale ◽  
Plastic Behavior ◽  
Face Centered Cubic ◽  
Second Phases ◽  
Strain Reversal ◽  
Face Centered ◽  
Stable Dislocation

The present work examines the reversal response of a face-centered cubic (fcc) polycrystalline metal after large pre-strains. While reversal responses among different fcc metals are similar after small pre-strains, they can vary widely after large pre-strains depending on material and microstructure. In this article, these characteristics are considered to be governed by three distinct mechanisms: (1) reverse glide of dislocations previously held by backstresses, (2) reverse glide of dislocations previously held by barriers, and (3) ‘reverse hardening’ by reverse glide over stable dislocation barriers formed in pre-straining. These small-scale mechanisms are incorporated into a polycrystal code to investigate their influence on the macroscopic reversal response and to interpret large strain reversal tests in the literature. It is shown that mechanism (2) is responsible for worksoftening and reductions in hardening rate and mechanism (3) for the overshoot seen in α- brass and other low stacking fault energy alloys. Mechanism (1) is responsible for the Bauschinger effect and occurs in all metals. A large fraction of second phases leads to a strong Bauschinger effect that can either reduce or postpone the effects of mechanisms (2) and (3).

Detailed formation processes of stable dislocations in graphene

Nanoscale ◽  
2014 ◽  
Vol 6 (24) ◽  
pp. 14836-14844 ◽  
Author(s):  
Gun-Do Lee ◽  
Euijoon Yoon ◽  
Kuang He ◽  
Alex W. Robertson ◽  
Jamie H. Warner
Keyword(s):  
Multiple Bond ◽  
Vacancy Cluster ◽  
Time Dependent ◽  
Formation Processes ◽  
Stable Dislocation

We use time-dependent HRTEM to reveal that stable dislocation pairs in graphene are formed from an initial complex multi-vacancy cluster that undergoes multiple bond rotations and adatom incorporation.

scholarly journals Formation of a stable defects structure in silicon noise diodes

2021 ◽  
Vol 66 (2) ◽  
pp. 145-153
Author(s):  
V. V. Emelyanov ◽  
V. A. Emelyanov ◽  
V. V. Baranov ◽  
V. V. Busliuk
Keyword(s):  
Dislocation Structure ◽  
Experimental Studies ◽  
Melting Process ◽  
Melting Zone ◽  
Laser Spot ◽  
Dislocation Generation ◽  
Defective Structure ◽  
Plate Area ◽  
Secondary Ion ◽  
Stable Dislocation

vThe possibilities and methods of creating a stable defective structure, including dislocation structure near the zones of p–n-transitions of silicon diodes of noise generators on plates with crystallographic orientations (111) and (001) have been investigated. The effective distribution control of uncontrolled impurities in monocrystalline silicon is achieved by forming a stable dislocation structure in its volume. In order to obtain the reproducible characteristics of noise generator diodes, it is necessary that the dislocation density be homogeneous throughout the plate area. Since the density of dislocations is slightly lower at the edge of the dislocation trail than in the middle, this means that the dislocation traces formed by the adjacent melting zones with the help of a laser beam should overlap. On the basis of experimental studies, it has been established that the necessary degree of uniformity of the density of defects generated is achieved by compliance with the condition of a = (1.5–5.0)d, where a is a step, d is a width of the laser spot on the wafer. The melting process was carried out in a nitrogen environment using a laser hettering unit. The real width of the melting zone turns out to be slightly larger than the diameter of the laser spot due to the thermal conductivity of the silicon and is about 10 μm. Increased dislocation generation on the Si3N4 inclusions, as opposed to dislocations on the Si–SiO2 border, leads to an additional expansion of the dislocation track at the work surface of the plate of noise diodes. The presence of the stable dislocation structure, as well as the presence of impurities and secondary metal atoms in the noise diodes ND 103L structure are confirmed by the secondary ion mass spectroscopy (SIMS) method. The results of the study have been tested at Corporation “INTEGRAL” (Belarus) and can be used in the manufacture of silicon noise diodes.

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