Deep levels induced by high‐energy boron ion implantation intop‐silicon

1992 ◽  
Vol 61 (14) ◽  
pp. 1682-1684 ◽  
Author(s):  
H. Sayama ◽  
M. Takai ◽  
Y. Yuba ◽  
S. Namba ◽  
K. Tsukamoto ◽  
...  
Keyword(s):  
Ion Implantation ◽  
High Energy ◽  
Deep Levels

Secondary Defects and Deep Levels in N-Si Induced by High Energy P Ion Implantation

1995 ◽  
Vol 196-201 ◽  
pp. 1875-1880
Author(s):  
S. Tatsukawa ◽  
Yuko Nakahara ◽  
Satoshi Matsumoto
Keyword(s):  
Ion Implantation ◽  
High Energy ◽  
Deep Levels

Long Period Gratings in Multimode Fiber Fabricated with High-Energy Ion Implantation

2003 ◽  
Vol 22 (4) ◽  
pp. 225-237
Author(s):  
K. J. GRANT ◽  
ROBERTS A. ◽  
D. N. JAMIESON ◽  
B. ROUT ◽  
C. CHER
Keyword(s):  
Ion Implantation ◽  
High Energy ◽  
Multimode Fiber ◽  
Long Period ◽  
Long Period Gratings

scholarly journals Detection and depth analyses of deep levels generated by ion implantation in n- and p-type 4H-SiC

2009 ◽  
Vol 106 (1) ◽  
pp. 013719 ◽  
Author(s):  
Koutarou Kawahara ◽  
Giovanni Alfieri ◽  
Tsunenobu Kimoto
Keyword(s):  
Ion Implantation ◽  
Deep Levels ◽  
P Type

Deep Levels Induced by High Fluence Proton Irradiation in Undoped GaAs Diodes

1997 ◽  
Vol 487 ◽  
Author(s):  
A Castaldini ◽  
A Cavallini ◽  
L Polenta ◽  
C Canali ◽  
F Nava ◽  
...  
Keyword(s):  
Proton Irradiation ◽  
High Energy ◽  
Deep Levels ◽  
Induced Current ◽  
High Fluence ◽  
High Fluences ◽  
Electron Beam Induced Current ◽  
Insulating Liquid ◽  
Undoped Gaas ◽  
Scanning Electron

AbstractSemi-insulating liquid encapsulated Czochralski grown GaAs has been investigated after irradiation at high fluences of high-energy protons. Electron beam induced current observations of scanning electron microscopy evidenced a radiation stimulated ordering. An analysis has been carried out of the deep levels associated with defects as a function of the irradiation fluence, using complementary current transient spectroscopies. By increasing the irradiation fluence, the concentration of the native traps at 0.37 eV together with that of the EL2 defect significantly increases and, at the same time, two new electron traps at 0.15 eV and 0.18 eV arise and quickly increase in density.

Effects of high-energy (MeV) ion implantation of polyester films

1991 ◽  
Vol 59-60 ◽  
pp. 1263-1266 ◽  
Author(s):  
Ueno Keiji ◽  
Matsumoto Yasuyo ◽  
Nishimiya Nobuyuki ◽  
Noshiro Mitsuru ◽  
Satou Mamoru
Keyword(s):  
Ion Implantation ◽  
High Energy

scholarly journals Reduction of deep levels generated by ion implantation into n- and p-type 4H–SiC

2010 ◽  
Vol 108 (3) ◽  
pp. 033706 ◽  
Author(s):  
Koutarou Kawahara ◽  
Jun Suda ◽  
Gerhard Pensl ◽  
Tsunenobu Kimoto
Keyword(s):  
Ion Implantation ◽  
Deep Levels ◽  
P Type

High-energy ion implantation in polymer films

Vacuum ◽  
1992 ◽  
Vol 43 (5-7) ◽  
pp. 699-701 ◽  
Author(s):  
L Ya Alimova ◽  
IE Djamaletdinova ◽  
TS Pugacheva ◽  
IE Ilicheva
Keyword(s):  
Ion Implantation ◽  
Polymer Films ◽  
High Energy
Sign in / Sign up

Export Citation Format

Share Document