scholarly journals InGaAs/InP hot electron transistors grown by chemical beam epitaxy

1992 ◽  
Vol 61 (2) ◽  
pp. 189-191 ◽  
Author(s):  
W. L. Chen ◽  
J. P. Sun ◽  
G. I. Haddad ◽  
M. E. Sherwin ◽  
G. O. Munns ◽  
...  
Keyword(s):  
Chemical Beam Epitaxy ◽  
Hot Electron ◽  
Electron Transistors

scholarly journals The growth of resonant tunneling hot electron transistors using chemical beam epitaxy

1994 ◽  
Vol 136 (1-4) ◽  
pp. 50-55 ◽  
Author(s):  
W.L. Chen ◽  
G.O. Munns ◽  
L. Davis ◽  
P.K. Bhattacharya ◽  
G.I. Haddad
Keyword(s):  
Resonant Tunneling ◽  
Chemical Beam Epitaxy ◽  
Hot Electron ◽  
Electron Transistors

Novel Electronics Enabled by Rare Earth Arsenides Buried in III-V Semiconductors

1993 ◽  
Vol 301 ◽  
Author(s):  
S. James Allen ◽  
Dan Brehmer ◽  
C.J. PalmstrØm
Keyword(s):  
Rare Earth ◽  
Epitaxial Layers ◽  
Hot Electron ◽  
Surface Geometry ◽  
Electron Effective Mass ◽  
Metal Base ◽  
Lattice Match ◽  
Linear Material ◽  
Shubnikov De Haas Oscillations ◽  
Electron Transistors

ABSTRACTHeterostructures consisting of III-V semiconductors and epitaxial layers of the rare earth monoarsenides can be grown by molecular beam epitaxy. By alloying ErAs with ScAs, lattice match can be achieved with (Al,Ga)As. Using magneto-transport measurements, we show that these layers are semi-metallic with equal electron and hole concentrations, 3.0 ×1020 cm−3. Shubnikov-de Haas oscillations are used to confirm the predicted Fermi surface geometry and measure the electron effective mass and the coupling to the 4f spin on the Er3+ ion. Remarkably, the material shows no transition from semimetal to semiconductor as the film thickness is reduced to three monolayers. Below three monolayers the films are not uniform and are believed to consist of islands three monolayers high.This system provides a unique opportunity to explore novel electronics based on controlled transport through semimetal/semiconductor heterostructures. Lateral transport through semimetal islands immersed in a δ-doped layer may provide a fast non-linear material for THz electronics. Vertical transport through thin epitaxial layers may enable resonant tunneling hot electron transistors with a semi-metal base. Preliminary experiments on transistor like test structures measure some transfer through a 10 monolayer thick semimetal base. They also identify overgrowth of the III-V semiconductor on the semimetal layer as the key materials issue.

scholarly journals Material considerations for the design of 2D/3D hot electron transistors

APL Materials ◽  
2021 ◽  
Vol 9 (8) ◽  
pp. 081103
Author(s):  
Furkan Turker ◽  
Siavash Rajabpour ◽  
Joshua A. Robinson
Keyword(s):  
Hot Electron ◽  
Electron Transistors

Ballistic transport in hot‐electron transistors

1987 ◽  
Vol 62 (9) ◽  
pp. 3816-3820 ◽  
Author(s):  
Jingming Xu ◽  
Michael Shur
Keyword(s):  
Ballistic Transport ◽  
Hot Electron ◽  
Electron Transistors

Current gain in sub-10 nm base GaN tunneling hot electron transistors with AlN emitter barrier

2015 ◽  
Vol 106 (3) ◽  
pp. 032101 ◽  
Author(s):  
Zhichao Yang ◽  
Yuewei Zhang ◽  
Digbijoy N. Nath ◽  
Jacob B. Khurgin ◽  
Siddharth Rajan
Keyword(s):  
Current Gain ◽  
Hot Electron ◽  
Electron Transistors

Logic Circuits Using Resonant-Tunneling Hot Electron Transistors (RHETs)

1992 ◽  
pp. 258-267 ◽  
Author(s):  
Naoki Yokoyama ◽  
Motomu Takatsu ◽  
Kenichi Imamura ◽  
Hiroaki Ohnishi ◽  
Shunichi Muto ◽  
...  
Keyword(s):  
Resonant Tunneling ◽  
Logic Circuits ◽  
Hot Electron ◽  
Electron Transistors
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