Thermal stability of Si/Si1−xGex/Si heterostructures deposited by very low pressure chemical vapor deposition

1992 ◽  
Vol 61 (3) ◽  
pp. 315-317 ◽  
Author(s):  
Syun‐Ming Jang ◽  
Hyoun‐Woo Kim ◽  
Rafael Reif
Keyword(s):  
Thermal Stability ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Pressure Chemical ◽  
Thermal Stability Of

Thermal stability of InN epilayers grown by high pressure chemical vapor deposition

2013 ◽  
Vol 268 ◽  
pp. 1-5 ◽  
Author(s):  
Ananta R. Acharya ◽  
Sampath Gamage ◽  
M.K. Indika Senevirathna ◽  
Mustafa Alevli ◽  
Kucukgok Bahadir ◽  
...  
Keyword(s):  
Thermal Stability ◽  
High Pressure ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Pressure Chemical ◽  
Thermal Stability Of

Rapid Growth Kinetics, Mechanical Properties and Thermal Stability of Siox Thin Films Grown by Rapid Thermal Low Pressure Chemical Vapor Deposition

1991 ◽  
Vol 240 ◽  
Author(s):  
A. Feingold ◽  
A. Katz ◽  
S. J. Pearton ◽  
U. K. Chakrabartl ◽  
K. S. Jones
Keyword(s):  
Thermal Stability ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Film Properties ◽  
Pressure Chemical ◽  
Ar Gas ◽  
Wet Etch ◽  
Inp Substrates

ABSTRACTHigh quality SiOx films were deposited onto InP substrates in the temperature range of 350 to 550°C and pressure range of 5 to 15 Torr. Depositions were made by means of rapid thermal low pressure chemical vapor deposition (RT-LPCVD) using oxygen (O2) and 2% diluted silane (SiH4) in argon (Ar) gas sources, with O2:SiH4 gas ratio of 5:1 to 50:1. High deposition rates of 15–50 nm/sec were obtained, providing uniform SiOx layers, with low stresses of −5×109 to −2×109 dyne-cm−2, and thermal stability on post deposition temperatures up to 1000°C. The SiOx films had refractive indexes between 1.44 and 1.50, densities of 2.25 to 2.37grcm−3 and exhibited wet etch rates of 0.2 to 0.8 nmsec.−1 through standard p-etch process. The influence of the various process parameters on the SiOx film properties was examined.

In Situ Phosphorus-Doped Poly-Si by Low Pressure Chemical Vapor Deposition for Passivating Contacts

2020 ◽  
Author(s):  
Meric Firat ◽  
Hariharsudan Sivaramakrishnan Radhakrishnan ◽  
Maria Recaman Payo ◽  
Filip Duerinckx ◽  
Rajiv Sharma ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Pressure Chemical ◽  
Phosphorus Doped

A Novel Direct Liquid Injection Low Pressure Chemical Vapor Deposition System (DLI-LPCVD) for the Deposition of Thin Films

2017 ◽  
Vol 19 (8) ◽  
pp. 1700193 ◽  
Author(s):  
Mattias Vervaele ◽  
Bert De Roo ◽  
Jolien Debehets ◽  
Marilyne Sousa ◽  
Luman Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Liquid Injection ◽  
Pressure Chemical ◽  
Direct Liquid Injection

Low-pressure chemical vapor deposition of silicon dioxide using diethylsilane

1993 ◽  
Vol 5 (12) ◽  
pp. 1710-1714 ◽  
Author(s):  
R. A. Levy ◽  
J. M. Grow ◽  
G. S. Chakravarthy
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Dioxide ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Pressure Chemical
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