Study of electron traps in semi‐insulating gallium‐arsenide buffer layers for the suppression of backgating by the zero‐bias thermally stimulated current technique

1992 ◽  
Vol 61 (1) ◽  
pp. 49-51 ◽  
Author(s):  
W. S. Lau ◽  
T. C. Chong ◽  
L. S. Tan ◽  
C. H. Goo ◽  
K. S. Goh ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Buffer Layers ◽  
Thermally Stimulated Current ◽  
Zero Bias ◽  
Electron Traps ◽  
Current Technique

Electron Traps in n-GaN Grown on Si (111) Substrates by MOVPE

2008 ◽  
Vol 1068 ◽  
Author(s):  
Tsuneo Ito ◽  
Yutaka Terada ◽  
Takashi Egawa
Keyword(s):  
Sapphire Substrate ◽  
Deep Level ◽  
Buffer Layers ◽  
Si Substrate ◽  
Electron Traps ◽  
Organic Vapor ◽  
Pair Number ◽  
Metal Organic ◽  
Transient Spectroscopy ◽  
Gan On Si

ABSTRACTDeep level electron traps in n-GaN grown by metal organic vapor phase epitaxy (MOVPE) on Si (111) substrate were studied by means of deep level transient spectroscopy (DLTS). The growth of n-GaN on different pair number of AlN/GaN superlattice buffer layers (SLS) system and on c-face sapphire substrate are compared. Three deep electron traps labeled E4 (0.7-0.8 eV), E5 (1.0-1.1 eV), were observed in n-GaN on Si substrate. And the concentrations of these traps observed for n-GaN on Si are very different from that on sapphire substrate. E4 is the dominant of these levels for n-GaN on Si substrate, and it behaves like point-defect due to based on the analysis by electron capture kinetics, in spite of having high dislocation density of the order of 1010 cm−3.

Shallow Dopant and Surface Levels in 6H-SiC MOS Structures Studied by Thermally Stimulated Current Technique

2001 ◽  
Vol 353-356 ◽  
pp. 479-482 ◽  
Author(s):  
V.S. Lysenko ◽  
I.P. Osiyuk ◽  
T.E. Rudenko ◽  
I.P. Tyagulski ◽  
Einar Ö. Sveinbjörnsson ◽  
...  
Keyword(s):  
Thermally Stimulated Current ◽  
Current Technique ◽  
Mos Structures
Sign in / Sign up

Export Citation Format

Share Document