Visible light emission at room temperature from anodized plasma‐deposited silicon thin films

1992 ◽  
Vol 61 (13) ◽  
pp. 1552-1554 ◽  
Author(s):  
E. Bustarret ◽  
M. Ligeon ◽  
J. C. Bruyère ◽  
F. Muller ◽  
R. Hérino ◽  
...  
2007 ◽  
Vol 124-126 ◽  
pp. 1597-1600
Author(s):  
Hyoun Woo Kim ◽  
Sun Keun Hwang ◽  
Won Seung Cho ◽  
Tae Gyung Ko ◽  
Seung Yong Choi ◽  
...  

This paper reports the fabrication of indium oxide (In2O3) films using a triethylindium and oxygen mixture. The deposition has been carried out on TiAlN substrates (200-350°C). We have established the correlation between the substrate temperature and the structural properties. The films deposited at 300-350°C were polycrystalline, whereas those deposited at 200°C was close to amorphous. XRD analysis and SEM images indicated that the films grown at 350°C had grained structures with the (222) preferred orientation. The room-temperature photoluminescence spectra of the In2O3 films exhibited a visible light emission.


1995 ◽  
Vol 78 (6) ◽  
pp. 4020-4030 ◽  
Author(s):  
B. H. Augustine ◽  
E. A. Irene ◽  
Y. J. He ◽  
K. J. Price ◽  
L. E. McNeil ◽  
...  

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