Theoretical calculation of optical gain in InxGa1−xAs/InP quantum wells under biaxially compressive and tensile strain

1992 ◽  
Vol 60 (15) ◽  
pp. 1842-1844 ◽  
Author(s):  
Mitsuru Sugawara
Keyword(s):  
Quantum Wells ◽  
Theoretical Calculation ◽  
Tensile Strain ◽  
Optical Gain

scholarly journals Effects of tensile strain in barrier on optical gain spectra of GaInNAs/GaAsN quantum wells

2003 ◽  
Vol 93 (9) ◽  
pp. 5836-5838 ◽  
Author(s):  
W. J. Fan ◽  
S. T. Ng ◽  
S. F. Yoon ◽  
M. F. Li ◽  
T. C. Chong
Keyword(s):  
Quantum Wells ◽  
Tensile Strain ◽  
Optical Gain ◽  
Gain Spectra

Band structure and optical gain in InGaAsN∕GaAs and InGaAsN∕GaAsN quantum wells

2003 ◽  
Vol 150 (1) ◽  
pp. 25 ◽  
Author(s):  
X. Marie ◽  
J. Barrau ◽  
T. Amand ◽  
H. Carrère ◽  
A. Arnoult ◽  
...  
Keyword(s):  
Band Structure ◽  
Quantum Wells ◽  
Optical Gain

Feasibility Of Novel Si-Based Interminiband Lasers

1998 ◽  
Vol 533 ◽  
Author(s):  
Gregory Sun ◽  
Lionel Friedman ◽  
Richard A. Soref
Keyword(s):  
Quantum Wells ◽  
Current Density ◽  
Population Inversion ◽  
Heavy Hole ◽  
Optical Gain ◽  
Laser Structure ◽  
Strained Si ◽  
Superlattice Structures ◽  
A Current

AbstractWe have designed a parallel interminiband lasing in superlattice structures of coherently strained Si0.5Ge0.5/Si quantum wells (QWs). Population inversion is achieved between the non-parabolic heavy-hole valence minibands locally in-k-space. Lasing transition is at 5.4μm. Our analysis indicates that an optical gain of 134/cm can be obtained when the laser structure is pumped with a current density of 5kA/cm2.

Optical gain in (Zn,Cd)SeZn(S,Se) quantum wells as a function of temperature

1998 ◽  
Vol 184-185 ◽  
pp. 623-626
Author(s):  
F.P. Logue ◽  
P. Rees ◽  
C. Jordan ◽  
J.F. Donegan ◽  
J. Hegarty ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Optical Gain

Thermal characteristics of optical gain for GaInNAs quantum wells at 1.3 μm

2001 ◽  
Vol 79 (19) ◽  
pp. 3038-3040 ◽  
Author(s):  
Chang Kyu Kim ◽  
Yong Hee Lee
Keyword(s):  
Quantum Wells ◽  
Thermal Characteristics ◽  
Optical Gain

OPTICAL GAIN AND ENERGY BAND STRUCTURE OF PHOTONIC CRYSTAL VCSELs WITH HIGH-INDEX-CONTRAST SUBWAVELENGTH GRATINGS

2014 ◽  
Vol 02 (02) ◽  
pp. 1440014
Author(s):  
J. CHEN ◽  
W. J. FAN ◽  
Q. J. WANG ◽  
MARCIN GEBSKI ◽  
MACIEJ DEMS ◽  
...  
Keyword(s):  
Photonic Crystal ◽  
Quantum Wells ◽  
Optical Gain ◽  
High Index ◽  
Cavity Surface ◽  
Subwavelength Gratings ◽  
Vertical Cavity Surface ◽  
Index Contrast ◽  
High Index Contrast ◽  
Valence Bands

Photonic crystal vertical-cavity surface-emitting laser structure with incorporation of high-index-contrast subwavelength gratings is fabricated and the three quantum well active region of the structure is investigated with 8 band k.p model. The dispersion of energy sub-bands and wave functions in the conduction bands and valence bands indicate that effective overlapping and interactions between electrons and holes can be realized in the quantum wells and that the maximum spontaneous emission rate and optical gain occurs at the expected wavelength, which is confirmed by the measured photoluminescence spectrum.

Absorption and Emission of Light in Quantum Structures

2020 ◽  
pp. 343-418
Author(s):  
Vurgaftman Igor
Keyword(s):  
Quantum Wells ◽  
Radiative Recombination ◽  
Quantum Wires ◽  
Incident Light ◽  
Optical Gain ◽  
Two Dimensional ◽  
Intersubband Transitions ◽  
Recombination Rates ◽  
Zinc Blende ◽  
Two Dimensional Materials

This chapter shows how to calculate the absorption coefficient, optical gain, and radiative recombination rates in quantum wells and superlattices. A detailed treatment of both interband and intersubband transitions is presented, and their differences and similarities are considered in detail. The optical properties of wurtzite quantum wells and zinc-blende quantum wires and dots are also discussed. Finally, the interaction of excitonic transitions with incident light in quantum wells is considered as a model for other two-dimensional materials.

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