Effect of free carriers on the linewidth enhancement factor of InGaAs/InP (strained‐layer) multiple quantum well lasers
1994 ◽
Vol 30
(2)
◽
pp. 533-537
◽
1993 ◽
Vol 29
(6)
◽
pp. 1553-1559
◽
1991 ◽
Vol 23
(8)
◽
pp. 1031-1035
◽
1994 ◽
Vol 33
(Part 1, No. 1B)
◽
pp. 811-814
◽
Linewidth enhancement factor of 1.3 mu m InGaAsP/InP strained-layer multiple-quantum-well DFB lasers
1991 ◽
Vol 3
(10)
◽
pp. 877-879
◽
1990 ◽